Abstract: A display apparatus including a light emitting device and a pixel driving circuit is disclosed. The pixel driving circuit supplies drive current corresponding to a data signal. The pixel driving circuit includes a driving thin film transistor and switching thin film transistors. The switching thin film transistors include a sampling thin film transistor electrically connected between a driving gate electrode and a driving source electrode of the driving thin film transistor. A sampling semiconductor pattern of the sampling thin film transistor is disposed between a sampling light shielding pattern and a sampling gate electrode of the sampling thin film transistor. A cross-section of at least one of the sampling light shielding pattern or the sampling gate electrode has a concave shape with reference to the sampling semiconductor pattern. A variation in characteristics of the sampling thin film transistor by light emitted from the light emitting device is prevented.

Abstract: A display apparatus including a light emitting device and a pixel driving circuit is disclosed. The pixel driving circuit supplies drive current corresponding to a data signal. The pixel driving circuit includes a driving thin film transistor and switching thin film transistors. The switching thin film transistors include a sampling thin film transistor electrically connected between a driving gate electrode and a driving source electrode of the driving thin film transistor. A sampling semiconductor pattern of the sampling thin film transistor is disposed between a sampling light shielding pattern and a sampling gate electrode of the sampling thin film transistor. A cross-section of at least one of the sampling light shielding pattern or the sampling gate electrode has a concave shape with reference to the sampling semiconductor pattern. A variation in characteristics of the sampling thin film transistor by light emitted from the light emitting device is prevented.

Abstract: A display apparatus can include a first thin-film transistor including a first active layer having a first polysilicon material, a first gate electrode overlapping the first active layer, a first electrode and a second electrode; a second thin-film transistor including a second active layer having an oxide semiconductor, a second gate electrode overlapping the second active layer, a third electrode and a fourth electrode; and a first emitting electrode of a light emitting element electrically connected to the second electrode of the first thin-film transistor. Also, one end of the first active layer having the first polysilicon material is electrically connected to one or the other end of the second active layer having the oxide semiconductor.

Abstract: A display apparatus including a first thin-film transistor, a second thin-film transistor and a third thin-film transistor is provided. The first thin-film transistor includes a first active layer composed of a polysilicon material, a first gate electrode overlapping the first active layer such that a first gate insulating layer is interposed therebetween, a first source electrode and a first drain electrode. The first gate electrode includes n layers. The first source electrode and the first drain electrode are connected to the first active layer. The second thin-film transistor includes a second active layer composed of a polysilicon material, a second gate electrode overlapping the second active layer such that a first gate insulating layer is interposed therebetween, a second source electrode and a second drain electrode. The second gate electrode includes n+1 layers. The second source electrode and the second drain electrode are connected to the second active layer.

Abstract: A thin film transistor (TFT) substrate includes a TFT on the substrate. The TFT includes an active patterned layer which is made of a polycrystalline silicon, which includes a channel portion, a source portion and a drain portion, and in which protrusions are formed at boundaries between grains and recess spaces are formed between the protrusions. A barrier pattern film fills the recess spaces and forms a flat surface with the protrusions. A gate electrode is on a gate insulating layer located on the barrier pattern film and the protrusions and overlays or corresponds to the channel portion. A source electrode and a drain electrode are on the gate electrode and respectively contact the source portion and the drain portion.

Abstract: The present invention relates to a hybrid organic light emitting display device including a driving thin film transistor having an oxide semiconductor pattern and a switching thin film transistor having an oxide semiconductor pattern or a polycrystalline semiconductor pattern in a driving device unit for driving a unit pixel, in which a light blocking layer below an active layer is electrically connected to a source electrode to form the driving thin film transistor with wide control range at low gradation and the light blocking layer is disposed as close as possible to the active layer to broaden the control range of the driving thin film transistor.

Abstract: A display apparatus including a first thin-film transistor, a second thin-film transistor and a third thin-film transistor is provided. The first thin-film transistor includes a first active layer composed of a polysilicon material, a first gate electrode overlapping the first active layer such that a first gate insulating layer is interposed therebetween, a first source electrode and a first drain electrode. The first gate electrode includes n layers. The first source electrode and the first drain electrode are connected to the first active layer. The second thin-film transistor includes a second active layer composed of a polysilicon material, a second gate electrode overlapping the second active layer such that a first gate insulating layer is interposed therebetween, a second source electrode and a second drain electrode. The second gate electrode includes n+1 layers. The second source electrode and the second drain electrode are connected to the second active layer.

Abstract: A thin film transistor (TFT) substrate includes a TFT on the substrate. The TFT includes an active patterned layer which is made of a polycrystalline silicon, which includes a channel portion, a source portion and a drain portion, and in which protrusions are formed at boundaries between grains and recess spaces are formed between the protrusions. A barrier pattern film fills the recess spaces and forms a flat surface with the protrusions. A gate electrode is on a gate insulating layer located on the barrier pattern film and the protrusions and overlays or corresponds to the channel portion. A source electrode and a drain electrode are on the gate electrode and respectively contact the source portion and the drain portion.

Abstract: A substrate for a liquid crystal display device includes: a substrate including a display region displaying an image and a non-display region surrounding the display region; a dummy pattern in the non-display area over the substrate, the dummy pattern having a length that corresponds to a side of the display area; and an orientation film on the dummy pattern, the orientation film covering the non-display area and the whole display area.

Abstract: A subpixel structure for a display device and a method of fabricating the display device are discussed. The subpixel structure can include a light emitting diode, a first switching transistor having a first gate electrode and a first active layer, a driving transistor having a second gate electrode and a second active layer, a second switching transistor including a third gate electrode and a third active layer, and at least one of the first, second and third gate electrodes is disposed between the corresponding first, second and third active layers and a substrate.

Abstract: A subpixel structure for a display device and a method of fabricating the display device are discussed. The subpixel structure can include a light emitting diode, a first switching transistor having a first gate electrode and a first active layer, a driving transistor having a second gate electrode and a second active layer, a second switching transistor including a third gate electrode and a third active layer, and at least one of the first, second and third gate electrodes is disposed between the corresponding first, second and third active layers and a substrate.

Abstract: A liquid crystal display (LCD) device and a manufacturing method thereof are provided. An alignment layer and a seal pattern are formed to overlap to reduce a width of a bezel, and one or more alignment layer spreading preventing means are formed to prevent a degradation of adhesive strength between the seal pattern and a substrate due to the characteristics of the alignment layer.

Abstract: A color filter substrate includes a substrate in which a plurality of pixel areas are defined; a black matrix formed on the substrate, and having a plurality of openings in correspondence to the pixel areas; a color filter layer formed on the substrate, and including a red color filter, a green color filter, and a blue color filter that are sequentially arranged in a first direction in correspondence to the pixel areas; and a plurality of first column spacers and a plurality of second column spacers formed over the black matrix, and having different heights, wherein a height of each of the first column spacers is higher than a height of each of the second column spacers, and an arrangement density of the first column spacers is lower than an arrangement density of the second column spacers.

Abstract: A substrate for a liquid crystal display device includes: a substrate including a display region displaying an image and a non-display region surrounding the display region; a dummy pattern in the non-display area over the substrate, the dummy pattern having a length that corresponds to a side of the display area; and an orientation film on the dummy pattern, the orientation film covering the non-display area and the whole display area.

Abstract: An array substrate includes a substrate; gate lines over the substrate along a first direction; data lines over the substrate along a second direction and crossing the gate lines to define pixel regions; a thin film transistor at each crossing portion of the gate and data lines; an insulating layer covering the thin film transistor and having a flat top surface; a common electrode on the insulating layer all over the substrate; a common line on the common electrode; a passivation layer on the common line; and a pixel electrode on the passivation layer in each pixel region and connected to the thin film transistor, the pixel electrode including electrode patterns, wherein the passivation layer has a step height at a top surface of the passivation layer due to the plurality of common lines.

Abstract: A substrate for a liquid crystal display device includes: a substrate including a display region displaying an image and a non-display region surrounding the display region; a dummy pattern in the non-display area over the substrate, the dummy pattern having a length that corresponds to a side of the display area; and an orientation film on the dummy pattern, the orientation film covering the non-display area and the whole display area.

Abstract: A liquid crystal display (LCD) device and a manufacturing method thereof are provided. An alignment layer and a seal pattern are formed to overlap to reduce a width of a bezel, and one or more alignment layer spreading preventing means are formed to prevent a degradation of adhesive strength between the seal pattern and a substrate due to the characteristics of the alignment layer.

Abstract: A method of fabricating a liquid crystal display device includes forming a first adhesive pattern on a first auxiliary substrate; forming a first process panel by attaching a first substrate to the first auxiliary substrate using the first adhesive pattern; forming an array element on the first substrate; forming a second adhesive pattern on a second auxiliary substrate; forming a second process panel by attaching a second substrate to the second auxiliary substrate using the second adhesive pattern; forming a color filter element on the second substrate; attaching the first and second process panels with a liquid crystal panel between the first and second process panels; weakening an adhesive strength of the first and second adhesive patterns; and detaching the first and second auxiliary substrates from the first and second substrates, respectively.

Abstract: An array substrate includes a substrate; gate lines over the substrate along a first direction; data lines over the substrate along a second direction and crossing the gate lines to define pixel regions; a thin film transistor at each crossing portion of the gate and data lines; an insulating layer covering the thin film transistor and having a flat top surface; a common electrode on the insulating layer all over the substrate; a common line on the common electrode; a passivation layer on the common line; and a pixel electrode on the passivation layer in each pixel region and connected to the thin film transistor, the pixel electrode including electrode patterns, wherein the passivation layer has a step height at a top surface of the passivation layer due to the plurality of common lines.

Abstract: A color filter substrate includes a substrate in which a plurality of pixel areas are defined; a black matrix formed on the substrate, and having a plurality of openings in correspondence to the pixel areas; a color filter layer formed on the substrate, and including a red color filter, a green color filter, and a blue color filter that are sequentially arranged in a first direction in correspondence to the pixel areas; and a plurality of first column spacers and a plurality of second column spacers formed over the black matrix, and having different heights, wherein a height of each of the first column spacers is higher than a height of each of the second column spacers, and an arrangement density of the first column spacers is lower than an arrangement density of the second column spacers.