Abstract: Provided is a method of manufacturing a silica aerogel blanket, and an apparatus for manufacturing a silica aerogel blanket used in the method. The method includes: (1) drying a silica hydrogel through a supercritical drying process using a supercritical extractor; (2) separating an extract discharged from the supercritical extractor into a gaseous phase including CO2 and a liquid phase including a solvent through a separator to discharge the gaseous phase and the liquid phase; and (3) condensing the gaseous phase including CO2 discharged from the separator in a condenser, wherein the separation in the separator is performed under the condition of a pressure of 60 bar to 90 bar, and the gaseous phase including CO2 discharged from the separator is condensed in the condenser so that the gaseous phase has a temperature of 10° C. or higher and a pressure of 60 bar to 90 bar.

Abstract: Disclosed is a substrate treating apparatus. The substrate treating apparatus includes a housing having a treatment space, in which a substrate is treated, a support unit that supports the substrate in the treatment space, a shower plate having a through-hole, through which a process gas flows to the treatment space, a plasma source that excites plasma by exciting the process gas supplied to the treatment space, and a density adjusting member that adjusts a density of the plasma generated in the treatment space by changing a dielectric permittivity, and the density adjusting member is located on the shower plate.

Abstract: The present invention relates to a method for producing a silica aerogel blanket and an apparatus for producing the same, which are capable of easily controlling the physical properties of a silica aerogel blanket by separately injecting silica sol and a gelation catalyst to control gelation time, improving aerogel pore structure to be uniform and improving thermal insulation performance by sufficiently and uniformly impregnating the silica and the gelation catalyst into a blanket, reducing the loss of silica sol and gelation catalyst by allowing the silica sol and the gelation catalyst to pass on an ascending slope before gelation to remove any excessive silica sol and gelation catalyst exceeding an appropriate impregnation amount, and providing a silica aerogel blanket having less process trouble, and less dust.

Abstract: Provided is a method for producing a silica aerogel blanket and an apparatus for producing the same, which are capable of easily controlling the physical properties of a silica aerogel blanket by separately injecting silica sol and a gelation catalyst to control gelation time, improving aerogel pore structure to be uniform and improving thermal insulation performance by sufficiently and uniformly impregnating the silica sol and the gelation catalyst into a blanket, reducing the loss of silica sol and gelation catalyst by allowing the silica sol and the gelation catalyst to pass on an ascending slope before gelation to remove any excessive silica sol and gelation catalyst exceeding an appropriate impregnation amount, and providing a silica aerogel blanket having less process trouble, and less dust.

Abstract: Provided is an aerogel blanket and a method for producing the same, wherein a catalyzed sol I sufficiently and uniformly impregnated into a blanket in an impregnation tank, and the catalyzed sol is allowed to stay in the impregnation tank for a specific time to control fluidity while achieving a viscosity at which the catalyzed sol can be easily introduced into the blanket, thereby forming a uniform aerogel in the blanket. As a result, the uniformity of pore structure and thermal insulation performance of an aerogel blanket are improved, the loss of raw materials is reduced through the impregnation process, the occurrence of process problems is reduced, and the generation of dust is reduced.

Abstract: Provided is a method for producing a silica aerogel blanket and an apparatus for producing the same, which are capable of easily controlling the physical properties of a silica aerogel blanket by separately injecting silica sol and a gelation catalyst to control gelation time, improving aerogel pore structure to be uniform and improving thermal insulation performance by sufficiently and uniformly impregnating the silica sol and the gelation catalyst into a blanket, reducing the loss of silica sol and gelation catalyst by allowing the silica sol and the gelation catalyst to pass on an ascending slope before gelation to remove any excessive silica sol and gelation catalyst exceeding an appropriate impregnation amount, and providing a silica aerogel blanket having less process trouble, and less dust.

Abstract: A semiconductor device includes a substrate having an active pattern extending in a first direction, a first gate structure and a second gate structure extending in a second direction, intersecting the first direction, to traverse the active pattern, the first gate structure and the second gate structure isolated from each other while facing each other in the second direction, a gate isolation pattern disposed between the first gate structure and the second gate structure, the gate isolation pattern having a void, and a filling insulating portion positioned lower than upper surfaces of the first gate structure and the second gate structure within the gate isolation pattern, the filling insulating portion being connected to at least an upper end of the void.

Abstract: Semiconductor devices are provided. The semiconductor device includes a first fin and a second fin on a substrate and a field insulation layer between the first fin and the second fin. The field insulation layer include a first insulation layer and a second insulation layer on the first insulation layer and connected to the first insulation layer. The second insulation layer is wider than the first insulation layer. A ratio of a top width to a bottom width of each of the first fin and the second fin exceeds 0.5.

Abstract: Semiconductor devices as described herein may include a fin-shaped pattern extending in a first direction, first and second side walls facing each other, first and second gate electrodes extending in a second direction and spaced apart from each other, a first gate spacer that is on a side wall of the first gate electrode, a second gate spacer that is on a side wall of the second gate electrode, a first trench in the fin-shaped pattern that is between the first and second gate electrodes and having a first width, and a second trench in the fin-shaped pattern that is below the first trench and has a second width smaller than the first width. The fin-shaped pattern may include first and second inflection points on the side walls of the fin-shaped pattern, and a bottom surface of the second trench may be lower than the inflection points.

Abstract: Semiconductor devices as described herein may include a fin-shaped pattern extending in a first direction, first and second side walls facing each other, first and second gate electrodes extending in a second direction and spaced apart from each other, a first gate spacer that is on a side wall of the first gate electrode, a second gate spacer that is on a side wall of the second gate electrode, a first trench in the fin-shaped pattern that is between the first and second gate electrodes and having a first width, and a second trench in the fin-shaped pattern that is below the first trench and has a second width smaller than the first width. The fin-shaped pattern may include first and second inflection points on the side walls of the fin-shaped pattern, and a bottom surface of the second trench may be lower than the inflection points.

Abstract: A semiconductor device is provided including first and second active fin arrays on a substrate. The semiconductor device further includes a pair of first gate spacers disposed on the first and second active fin arrays, each of the pair of first gate spacers including a first region having a first width, a second region having a second width, and a third region between the first region and the second region and having a third width; and first and second gate electrodes, the first gate electrode disposed between the first regions and the second gate electrode disposed between the second regions. The first regions are on the first active fin array, the second regions are on the second active fin array, and the third regions are between the first active fin array and the second active fin array. Each of the first and second widths is greater than the third width.

Abstract: Semiconductor devices are provided. The semiconductor device includes a first fin and a second fin on a substrate and a field insulation layer between the first fin and the second fin. The field insulation layer include a first insulation layer and a second insulation layer on the first insulation layer and connected to the first insulation layer. The second insulation layer is wider than the first insulation layer. A ratio of a top width to a bottom width of each of the first fin and the second fin exceeds 0.5.

Abstract: This present disclosure relates to an atomic layer etching method for graphene, including adsorbing reactive radicals onto a surface of the graphene and irradiating an energy source to the graphene on which the reactive radicals are adsorbed.

Abstract: The present invention provides a polypropylene-based resin composition, which comprises of a) a polypropylene; b) an ethylene 1-octene copolymer in which r1r2<1 (herein, r1=k11/k12, r2=k22/k21, k11 is a growth reaction rate constant when ethylene is added to a growth chain in which an end active site is ethylene, k12 is a growth reaction rate constant when octene is added to a growth chain in which an end active site is ethylene, k22 is a growth reaction rate constant when octene is added to a growth chain in which an end active site is octene, and k21 is a growth reaction rate constant when ethylene is added to a growth chain in which an end active site is octene); and c) an inorganic filling agent, and a part for vehicles manufactured by using the same.

Abstract: This present disclosure relates to an atomic layer etching method for graphene, including adsorbing reactive radicals onto a surface of the graphene and irradiating an energy source to the graphene on which the reactive radicals are adsorbed.

Abstract: The present invention provides a polypropylene-based resin composition, which comprises of a) a polypropylene; b) an ethylene 1-octene copolymer in which r1r2<1 (herein, r1=k11/k12, r2=k22/k21, k11 is a growth reaction rate constant when ethylene is added to a growth chain in which an end active site is ethylene, k12 is a growth reaction rate constant when octene is added to a growth chain in which an end active site is ethylene, k22 is a growth reaction rate constant when octene is added to a growth chain in which an end active site is octene, and k21 is a growth reaction rate constant when ethylene is added to a growth chain in which an end active site is octene); and c) an inorganic filling agent, and a part for vehicles manufactured by using the same.

Abstract: The present invention provides a polypropylene-based resin composition, which comprises of a) a polypropylene; b) an ethylene 1-octene copolymer in which r1r2<1 (herein, r1=k11/k12, r2=k22/k21, k11 is a growth reaction rate constant when ethylene is added to a growth chain in which an end active site is ethylene, k12 is a growth reaction rate constant when octene is added to a growth chain in which an end active site is ethylene, k22 is a growth reaction rate constant when octene is added to a growth chain in which an end active site is octene, and k21 is a growth reaction rate constant when ethylene is added to a growth chain in which an end active site is octene); and c) an inorganic filling agent, and a part for vehicles manufactured by using the same.

Abstract: The present invention provides a polypropylene-based resin composition, which comprises of a) a polypropylene; b) an ethylene 1-octene copolymer in which r1r2<1 (herein, r1=k11/k12, r2=k22/k21, k11 is a growth reaction rate constant when ethylene is added to a growth chain in which an end active site is ethylene, k12 is a growth reaction rate constant when octene is added to a growth chain in which an end active site is ethylene, k22 is a growth reaction rate constant when octene is added to a growth chain in which an end active site is octene, and k21 is a growth reaction rate constant when ethylene is added to a growth chain in which an end active site is octene); and c) an inorganic filling agent, and a part for vehicles manufactured by using the same.