Patents by Inventor Kyungyeol MA

Kyungyeol MA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • BORON NITRIDE LAYER, APPARATUS INCLUDING THE SAME, AND METHOD OF FABRICATING THE BORON NITRIDE LAYER
    Publication number: 20250066950
    Abstract: A boron nitride layer and a method of fabricating the same are provided. The boron nitride layer includes a boron nitride compound and has a dielectric constant of about 2.5 or less at an operating frequency of 100 kHz.
    Type: Application
    Filed: November 11, 2024
    Publication date: February 27, 2025
    Applicants: Samsung Electronics Co., Ltd., UNIST (ULSAN NATIONAL INSTITUTE OF SCIENCE AND TECHNOLOGY)
    Inventors: Changseok LEE, Hyeonsuk SHIN, Hyeonjin SHIN, Seokmo HONG, Minhyun LEE, Seunggeol NAM, Kyungyeol MA
  • Method of fabricating hexagonal boron nitride
    Patent number: 12180584
    Abstract: Disclosed herein is a method of fabricating hexagonal boron nitride in which hexagonal boron nitride is epitaxially grown. A method of fabricating hexagonal boron nitride includes placing a catalytic metal in a chamber, the catalytic metal having a hexagonal crystal structure and having a lattice mismatch of 15% or less with hexagonal boron nitride (h-BN) in a chamber; and growing hexagonal boron nitride on the catalytic metal at a temperature of 800° C. or lower while supplying a nitrogen source and a boron source into the chamber.
    Type: Grant
    Filed: May 28, 2020
    Date of Patent: December 31, 2024
    Assignees: Samsung Electronics Co., Ltd., UNIST (Ulsan National Institute of Science and Technology)
    Inventors: Changseok Lee, Hyeonsuk Shin, Hyeonjin Shin, Seokmo Hong, Kyungyeol Ma
  • Boron nitride layer, apparatus including the same, and method of fabricating the boron nitride layer
    Patent number: 12139814
    Abstract: A boron nitride layer and a method of fabricating the same are provided. The boron nitride layer includes a boron nitride compound and has a dielectric constant of about 2.5 or less at an operating frequency of 100 kHz.
    Type: Grant
    Filed: April 11, 2023
    Date of Patent: November 12, 2024
    Assignees: Samsung Electronics Co., Ltd., UNIST (ULSAN NATIONAL INSTITUTE OF SCIENCE AND TECHNOLOGY)
    Inventors: Changseok Lee, Hyeonsuk Shin, Hyeonjin Shin, Seokmo Hong, Minhyun Lee, Seunggeol Nam, Kyungyeol Ma
  • BORON NITRIDE LAYER, APPARATUS INCLUDING THE SAME, AND METHOD OF FABRICATING THE BORON NITRIDE LAYER
    Publication number: 20230272554
    Abstract: A boron nitride layer and a method of fabricating the same are provided. The boron nitride layer includes a boron nitride compound and has a dielectric constant of about 2.5 or less at an operating frequency of 100 kHz.
    Type: Application
    Filed: April 11, 2023
    Publication date: August 31, 2023
    Applicants: Samsung Electronics Co., Ltd., UNIST (ULSAN NATIONAL INSTITUTE OF SCIENCE AND TECHNOLOGY)
    Inventors: Changseok LEE, Hyeonsuk SHIN, Hyeonjin SHIN, Seokmo HONG, Minhyun LEE, Seunggeol NAM, Kyungyeol MA
  • Boron nitride layer, apparatus including the same, and method of fabricating the boron nitride layer
    Patent number: 11624127
    Abstract: A boron nitride layer and a method of fabricating the same are provided. The boron nitride layer includes a boron nitride compound and has a dielectric constant of about 2.5 or less at an operating frequency of 100 kHz.
    Type: Grant
    Filed: October 28, 2020
    Date of Patent: April 11, 2023
    Assignees: Samsung Electronics Co., Ltd., UNIST (Ulsan National Institute of Science and Technology)
    Inventors: Changseok Lee, Hyeonsuk Shin, Hyeonjin Shin, Seokmo Hong, Minhyun Lee, Seunggeol Nam, Kyungyeol Ma
  • BORON NITRIDE LAYER, APPARATUS INCLUDING THE SAME, AND METHOD OF FABRICATING THE BORON NITRIDE LAYER
    Publication number: 20210123161
    Abstract: A boron nitride layer and a method of fabricating the same are provided. The boron nitride layer includes a boron nitride compound and has a dielectric constant of about 2.5 or less at an operating frequency of 100 kHz.
    Type: Application
    Filed: October 28, 2020
    Publication date: April 29, 2021
    Applicants: Samsung Electronics Co., Ltd., UNIST (ULSAN NATIONAL INSTITUTE OF SCIENCE AND TECHNOLOGY)
    Inventors: Changseok LEE, Hyeonsuk SHIN, Hyeonjin SHIN, Seokmo HONG, Minhyun LEE, Seunggeol NAM, Kyungyeol MA
  • METHOD OF FABRICATING HEXAGONAL BORON NITRIDE
    Publication number: 20210066069
    Abstract: Disclosed herein is a method of fabricating hexagonal boron nitride in which hexagonal boron nitride is epitaxially grown. A method of fabricating hexagonal boron nitride includes placing a catalytic metal in a chamber, the catalytic metal having a hexagonal crystal structure and having a lattice mismatch of 15% or less with hexagonal boron nitride (h-BN) in a chamber; and growing hexagonal boron nitride on the catalytic metal at a temperature of 800° C. or lower while supplying a nitrogen source and a boron source into the chamber.
    Type: Application
    Filed: May 28, 2020
    Publication date: March 4, 2021
    Applicants: Samsung Electronics Co., Ltd., UNIST (ULSAN NATIONAL INSTITUTE OF SCIENCE AND TECHNOLOGY)
    Inventors: Changseok LEE, Hyeonsuk SHIN, Hyeonjin SHIN, Seokmo HONG, Kyungyeol MA