Abstract: A plasma etching apparatus includes a chamber configured to generate plasma, an electrostatic chuck disposed in the chamber, and a focus ring placed on the electrostatic chuck and configured to support an object to be etched. The focus ring includes a seating part and a body part. A seating surface is provided on at least a portion of the seating part configured to seat the object to be etched thereon. The focus ring further includes a step provided between the seating part and the body part. The body part includes a body area and a chucking reinforcement area. The body area includes a first corrosion resistant layer, and the chucking reinforcement area includes a second corrosion resistant layer. The second corrosion resistant layer is thinner than the first corrosion resistant layer, and has a minimum thickness of 1 mm or more.

Abstract: A focus ring for mounting an etching target in a plasma etching device, includes a seating portion, including a seating surface configured to accommodate the etching target; and a main body, formed on an outer circumference of the seating portion, comprising a groove portion having a groove disposed in an upper surface of the main body. A height of an upper surface of the groove portion is lower than a maximum height of the upper surface of the main body.

Abstract: A ceramic component included in a plasma etching apparatus, wherein a surface of the ceramic component may include a base material and a composite material disposed in contact with the base material, wherein a resistivity of the ceramic component may be 10?1 ?·cm to 20 ?·cm, and wherein the base material may include a first boron carbide-based material and the composite material may include at least one selected from the group consisting of a second boron carbide-based material, a carbon-based material, and combinations thereof, is disclosed.

Abstract: The present disclosure relates to a ceramic component including a boron carbide, wherein a difference of a first residual stress measured at a first spot on a surface of the ceramic component and a second residual stress measured at a second spot on the surface having different distance from a center of the surface than the first spot is ?600 to +600 MPa.