Abstract: A method of fabricating a semiconductor device includes forming a device isolation layer in a substrate to define a plurality of active regions extending in a first direction; forming a trench in an upper portion of the substrate that crosses the active regions in a second direction that intersects the first direction; forming a sacrificial layer that fills the trench; forming support patterns on the sacrificial layer, wherein the support patterns fill recessed regions provided at a top surface of the sacrificial layer; and removing the sacrificial layer. The support patterns are spaced apart from each other with the active regions interposed therebetween.

Abstract: A method of fabricating a semiconductor device includes forming a device isolation layer in a substrate to define a plurality of active regions extending in a first direction; forming a trench in an upper portion of the substrate that crosses the active regions in a second direction that intersects the first direction; forming a sacrificial layer that fills the trench; forming support patterns on the sacrificial layer, wherein the support patterns fill recessed regions provided at a top surface of the sacrificial layer; and removing the sacrificial layer. The support patterns are spaced apart from each other with the active regions interposed therebetween.

Abstract: The present invention relates to a spark discharge generator. The spark discharge system of the present invention includes a plurality of columnar electrodes and a ground plate having a plurality of outlet holes at positions corresponding to the columnar electrodes. The use of the spark discharge generator enables the production of a three-dimensionally shaped nanostructure array on a large area in a uniform and rapid manner.

Abstract: The present invention relates to a process for preparing an electronic device comprising at least one layer selected from the group consisting of a upper electrode layer, a lower electrode layer, an organic layer and an inorganic layer, which comprises a step of introducing a nanoparticle layer or a nano/micro structure layer by adhering charged nanoparticles, before, after or during forming the layer.

Abstract: The present invention relates to a spark discharge generator. The spark discharge system of the present invention includes a plurality of columnar electrodes and a ground plate having a plurality of outlet holes at positions corresponding to the columnar electrodes. The use of the spark discharge generator enables the production of a three-dimensionally shaped nanostructure array on a large area in a uniform and rapid manner.

Abstract: The present invention relates to a method for manufacturing a nanoparticle structure by focused patterning of nanoparticles, and a nanoparticle structure obtained by the above method. The method of the present invention is characterized by comprising the steps of: first of all, accumulating ions generated by corona discharge on a substrate where a micro/nano pattern is formed; inducing charged nanoparticles and ions generated by spark discharge to the micro/nano pattern of the substrate; and then focused depositing on the micro/nano pattern. According to the method of the present invention, an elaborate nanoparticle structure, which has 3-dimensional shape having complicated structure, can be effectively manufactured.

Abstract: The present invention relates to a process for preparing an electronic device comprising at least one layer selected from the group consisting of a upper electrode layer, a lower electrode layer, an organic layer and an inorganic layer, which comprises a step of introducing a nanoparticle layer or a nano/micro structure layer by adhering charged nanoparticles, before, after or during forming the layer.