Abstract: A semiconductor device includes a substrate including a cell block region and a peripheral region adjacent to each other in a first direction, first and second active patterns adjacent to each other in a second direction that is different from the first direction on the cell block region, a first bit line extending in the first direction on the first active pattern, a second bit line extending in the first direction on the second active pattern, a bit line connector connecting the first bit line and the second bit line to each other and adjacent to the peripheral region, an inner spacer on an inner surface of the bit line connector, and an outer spacer on an outer surface of the bit line connector. The inner spacer extends on (e.g., covers) the inner surface of the bit line connector and extends onto (e.g., continuously extends onto) inner surfaces of the first bit line and the second bit line.

Abstract: A semiconductor device includes a substrate that includes an element separation film, an active region defined by the element separation film and arranged in a first direction, and a trench positioned across the active region and the element separation film, a bit line contact that is positioned within the trench and is connected to the active region, a bit line structure that is connected to the substrate through the bit line contact and that extends in a second direction different from the first direction across the active region, and a first contact spacer, a second contact spacer, and a third contact spacer within the trench and around the bit line contact, the first contact spacer being continuous within the trench, and each of the second contact spacer and the third contact spacer being separated into at least two discrete parts within the trench.