Abstract: A magnetoresistive element for a two-dimensional magnetic field sensor, including: a ferromagnetic reference layer having a fixed reference magnetization, a ferromagnetic sense layer having a sense magnetization that can be freely oriented relative to the reference magnetization in the presence of an external magnetic field, and a tunnel barrier layer between the reference and sense ferromagnetic layers; the reference layer including a reference coupling layer between a reference pinned layer and a reference coupled layer; the reference coupled layer including a first coupled sublayer in contact with the reference coupling layer, a second coupled sublayer, a third coupled sublayer and a insert layer between the second and third coupled sublayers; the insert layer comprising a transition metal and has a thickness between about 0.1 and about 0.5 nm, and the thickness of the reference coupled layer is between about 1 nm and about 5 nm.

Abstract: Magnetoresistive element comprising a reference layer having a fixed reference magnetization; a ferromagnetic sense layer having a free sense magnetization having a stable vortex configuration that is orientable relative to the fixed reference magnetization in the presence of an external magnetic field; and a tunnel barrier layer between the reference layer and the sense layer and contacting a first side of the sense layer. The magnetoresistive element further comprises a hard magnetic layer arranged on a second side (212) of the sense layer opposed to the first side, the hard magnetic layer being configured to generate an interfacial magnetic coupling between the hard magnetic layer and the sense layer on the second side, such as to prevent chirality switching of the sense magnetization after the magnetoresistive element has been submitted to a heat treatment and an external magnetic field above vortex expulsion field.

Abstract: The present disclosure concerns a magnetoresistive element comprising a reference layer having a reference magnetization oriented out-of-plane; a sense layer having a sense magnetization comprising a vortex configuration stable under the presence of an external magnetic field and reversibly movable in a direction out-of-plane relative to the reference magnetization when the external magnetic field varies in a direction out-of-plane; and a tunnel barrier layer between the reference layer and the sense layer. The sense layer has a thickness smaller than 200 nm. The sense layer comprises a ferromagnetic material configured such that the sense magnetization is between 300 and 1400 emu/cm3 and such that the sense layer has a perpendicular magnetic anisotropy field that is greater than 1 kOe (79.6×103 A/m). The present disclosure further concerns a magnetoresistive sensor comprising a plurality of the magnetoresistive element.

Abstract: Magnetic field sensor for sensing a two-dimensional external magnetic field, including a magnetic tunnel junction including a reference layer having a fixed reference magnetization, a sense ferromagnetic layer having a sense magnetization, and a tunnel barrier layer between the sense and reference ferromagnetic layers; the sense ferromagnetic layer including a first sense ferromagnetic layer in contact with the tunnel barrier layer, a second sense ferromagnetic layer, and a first non-magnetic layer between the first and second sense ferromagnetic layers; the second sense ferromagnetic layer includes a plurality of multilayer element, each multilayer element including a second non-magnetic layer between two second ferromagnetic sense layers; and wherein the second sense ferromagnetic layer has a thickness equal or less than 12 nm.

Abstract: A magnetoresistive element for a two-dimensional magnetic field sensor, including: a ferromagnetic reference layer having a fixed reference magnetization, a ferromagnetic sense layer having a sense magnetization that can be freely oriented relative to the reference magnetization in the presence of an external magnetic field, and a tunnel barrier layer between the reference and sense ferromagnetic layers; the reference layer including a reference coupling layer between a reference pinned layer and a reference coupled layer; the reference coupled layer including a first coupled sublayer in contact with the reference coupling layer, a second coupled sublayer, a third coupled sublayer and a insert layer between the second and third coupled sublayers; the insert layer comprising a transition metal and has a thickness between about 0.1 and about 0.5 nm, and the thickness of the reference coupled layer is between about 1 nm and about 5 nm.

Abstract: A magnetoresistive sensor element including: a reference layer having a pinned reference magnetization; a sense layer having a free sense magnetization comprising a stable vortex configuration reversibly movable in accordance to an external magnetic field to be measured; a tunnel barrier layer between the reference layer and the sense layer; wherein the sense layer includes a first ferromagnetic sense portion in contact with the tunnel barrier layer and a second ferromagnetic sense portion in contact with the first ferromagnetic sense portion; the second ferromagnetic sense portion including a dilution element in a proportion such that a temperature dependence of a magnetic susceptibility of the sense layer substantially compensates a temperature dependence of a tunnel magnetoresistance of the magnetoresistive sensor element. Also, a method for manufacturing the magnetoresistive sensor element.

Abstract: Magnetic field sensor for sensing a two-dimensional external magnetic field, including a magnetic tunnel junction including a reference layer having a fixed reference magnetization, a sense ferromagnetic layer having a sense magnetization, and a tunnel barrier layer between the sense and reference ferromagnetic layers; the sense ferromagnetic layer including a first sense ferromagnetic layer in contact with the tunnel barrier layer, a second sense ferromagnetic layer, and a first non-magnetic layer between the first and second sense ferromagnetic layers; the second sense ferromagnetic layer includes a plurality of multilayer element, each multilayer element including a second non-magnetic layer between two second ferromagnetic sense layers; and wherein the second sense ferromagnetic layer has a thickness equal or less than 12 nm.