Abstract: Digital latency shift communication problems from a driver chip to a receiver chip are overcome by scheduling a data output latency, a data input latency, a data output command, and/or a data output command, such that data outputted by the driver chip is received by the receiver chip at the correct time. A digital shift detection circuit detects the offset of the actual latencies from predetermined latencies. The offset of the latency is fed back to the scheduling circuit to override the predetermined latencies and/or command inputs that control the chip. The offset can be directly back-fed to the chip driver or chip receiver to compensate for digital shifts. Digital shift detection is achieved by measuring actual latencies with a manufacturing stand-alone tester, or with a built-in tester integral to the system. The digital shift detection predicts the conditions that create a digital shift by way of a mathematical model.

Abstract: A wordline activation delay monitor circuit is disclosed wherein at least one sample wordline and a sample wordline redundancy are located within the same data-storing array region of a memory, and a sample wordline selector is coupled to activate the sample wordline or sample wordline redundancy based on the state of a nonvolatile input. The wordline selector circuit may include one or both of a row decoder circuit or a wordline driver circuit which have substantially the same structure and location as row decoder circuits and wordline driver circuits used to activate wordlines within the data-storing array region.

Abstract: A shared row decoder and shared row decoding method are disclosed herein which provides separate timed selection signals to each of a first memory unit and a second memory unit. The shared row decoder includes an address input circuit responsive to the states of a plurality of address signals and which provides an enabling or disabling input. In addition, first and second selection circuits are provided which are responsive to enabled conditions of first and second block selection inputs, first and second timing signals, respectively and enabling input of the address input circuit to provide separate timed selection signals to the first and second memory units, respectively.

Abstract: A wordline activation delay monitor circuit is disclosed herein which includes a sample wordline located within a data-storing array of a memory, wherein the sample wordline is selected or activated by circuitry having substantially the same structure or location within the memory as circuitry which selects or activates wordlines of the data-storing array. A circuit is disclosed which determines a wordline activation delay for a first subarray group within the memory by activating a sample wordline which is located within a data-storing array of a second subarray group. Corresponding methods are also disclosed.

Abstract: A system is disclosed herein for stabilizing the current dissipation, voltage drop, and heating effects related to accessing blocks within first and second storage units of a double memory unit. The system includes a row selection unit located between the first and second storage units, which accesses storage locations of the first and second storage units according to first and second selection signals conducted from the outer extremities of the double memory unit to selected row locations. The blocks at corresponding distances from the outer extremities are numbered differently such that the sum of lengths of signal travel of the first and second selection signals to the numbered blocks remains relatively constant regardless of the block number which is selected for access.