Patents by Inventor Labao Zhang

Labao Zhang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11971486
    Abstract: A superconducting nanowire photon detection array adjusts a number of the array elements, a lens array that 1) splits transmitted lights into multiple beams that equals the number of the array elements, and are converged in to a superconducting nanowire detection area; 2) a pulsed laser detects a surface of an object, transmits reflected different light pulses by the surface of the object through the lens array, and records a round-trip time of each photon; 3) collects the photons detected by each array element, takes the array elements as pixels and calculates a gray value of the pixels; and 4) plots a gray-scale image by taking the pixels as pixel points, calculates a distance between the object and the pixel points, and reconstructs a three-dimensional image of the object.
    Type: Grant
    Filed: November 10, 2022
    Date of Patent: April 30, 2024
    Assignee: NANJING UNIVERSITY
    Inventors: Labao Zhang, Rui Yin, Biao Zhang, Shuya Guo, Jingrou Tan, Rui Ge, Lin Kang, Peiheng Wu
  • Publication number: 20230304857
    Abstract: The present invention discloses a design for reducing a dark count rate of a superconducting nanowire single photon detector (SNSPD) based on a two-wire structure, which includes: intertwining two niobium nitride nanowires that are not crossed to form an SNSPD of a two-wire structure; regulating and controlling behaviors of one nanowire by adopting the other nanowire, and regulating bias current to be close to superconducting critical current; introducing an optical signal into a photosensitive area of the detector by adopting an optical fiber; outputting two channels of signals respectively through the two nanowires to make the dark count rates of the two nanowires mutually excited; and through a voltage comparator and an exclusive-OR gate, reducing a dark count rate signal, and retaining a photon response signal.
    Type: Application
    Filed: April 7, 2021
    Publication date: September 28, 2023
    Inventors: Labao ZHANG, Rui YIN, Biao ZHANG, Qi CHEN, Jiayu LV, Rui GE, Lin KANG, Peiheng WU
  • Publication number: 20230079154
    Abstract: A superconducting nanowire photon detection array adjusts a number of the array elements, a lens array that 1) splits transmitted lights into multiple beams that equals the number of the array elements, and are converged in to a superconducting nanowire detection area; 2) a pulsed laser detects a surface of an object, transmits reflected different light pulses by the surface of the object through the lens array, and records a round-trip time of each photon; 3) collects the photons detected by each array element, takes the array elements as pixels and calculates a gray value of the pixels; and 4) plots a gray-scale image by taking the pixels as pixel points, calculates a distance between the object and the pixel points, and reconstructs a three-dimensional image of the object.
    Type: Application
    Filed: November 10, 2022
    Publication date: March 16, 2023
    Inventors: Labao Zhang, Rui Yin, Biao Zhang, Shuya Guo, Jingrou Tan, Rui Ge, Lin Kang, Peiheng Wu
  • Publication number: 20220267889
    Abstract: A fabrication method of a silicon nanoneedle array with ultra-high aspect ratio includes the following steps: spin-coating two photoresist layers of methyl methacrylate (MMA) and polymethyl methacrylate (PMMA) A2 on a silicon substrate; subjecting the silicon substrate coated with the two photoresist layers of MMA and PMMA A2 to electron beam lithography to form a photoresist pattern on the silicon substrate; subjecting the silicon substrate on which the photoresist pattern is formed to electron beam evaporation (EBE) to deposit an Al film layer on the silicon substrate; subjecting the silicon substrate on which the Al film layer is deposited to stripping to obtain an Al film array deposited on the silicon substrate, which provides a mask for the subsequent inductively coupled plasma (ICP) etching process; and subjecting the silicon substrate covered with the Al mask to ICP silicon etching to obtain a silicon nanoneedle array structure.
    Type: Application
    Filed: October 26, 2020
    Publication date: August 25, 2022
    Applicant: NANJING UNIVERSITY
    Inventors: Xuecou TU, Mengxin LIU, Lin KANG, Labao ZHANG, Xiaoqing JIA, Qingyuan ZHAO, Jian CHEN, Peiheng WU
  • Publication number: 20210398345
    Abstract: A superconducting nanowire photon detection array adjusts a number of the array elements, a lens array as an photon alignment system, splits transmitted lights into a plurality of beams, and converges the plurality of beams to a superconducting nanowire detection area; detects a surface of an object by adopting a pulsed laser, transmits different light pulses reflected by the surface of the object through the lens array, and records a round-trip time of each photon; collects the photons detected by each array element, takes the array elements as picture elements, and calculates a gray value of the picture element; and plots a gray-scale image by taking the picture elements as pixel points, calculates a distance between the object and the pixel points, and reconstructs a three-dimensional image of the object and the distance between the object and the pixel points.
    Type: Application
    Filed: April 19, 2021
    Publication date: December 23, 2021
    Inventors: Labao Zhang, Rui Yin, Biao Zhang, Shuya Guo, Jingrou Tan, Rui Ge, Lin Kang, Peiheng Wu