Abstract: The invention concerns a radiation entry window (10) for a radiation detector (2), in particular for a semiconductor drift detector (2), with a flat window element (11), which is at least partially permeable for the radiation to be detected by the radiation detector (2), as well as with a window frame (12), which laterally frames the window element (11), wherein the window frame (12) consists of a semiconductor material and is considerably thicker than the window element (11). (FIG.

Abstract: The invention concerns a radiation entry window (10) for a radiation detector (2), in particular for a semiconductor drift detector (2), with a flat window element (11), which is at least partially permeable for the radiation to be detected by the radiation detector (2), as well as with a window frame (12), which laterally frames the window element (11), wherein the window frame (12) consists of a semiconductor material and is considerably thicker than the window element (11).

Abstract: The invention relates to an avalanche photodiode (1) for detecting radiation, including a semiconductor substrate (11), an upper diode layer (15), an oppositely doped, laterally delimited lower diode layer (16), an avalanche region situated between the upper diode layer (15) and the lower diode layer (16), wherein the radiation to be detected triggers an avalanche breakdown in the avalanche region, and also including a contact-making layer (12) at the underside (10) of the semiconductor substrate (11), a laterally delimited quenching resistance layer (18) arranged in the semiconductor substrate (11) between the lower diode layer (16) and the contact-making layer (12), wherein the quenching resistance layer (18) quenches the radiation-generated avalanche breakdown in the avalanche region, and also including a depletion electrode (15) arranged laterally alongside the laterally delimited lower diode layer (16), such that the depletion electrode (15) depletes the semiconductor substrate (11) laterally alongside t

Abstract: The invention relates to an avalanche photodiode (1) for detecting radiation, including a semiconductor substrate (11), an upper diode layer (15), an oppositely doped, laterally delimited lower diode layer (16), an avalanche region situated between the upper diode layer (15) and the lower diode layer (16), wherein the radiation to be detected triggers an avalanche breakdown in the avalanche region, and also including a contact-making layer (12) at the underside (10) of the semiconductor substrate (11), a laterally delimited quenching resistance layer (18) arranged in the semiconductor substrate (11) between the lower diode layer (16) and the contact-making layer (12), wherein the quenching resistance layer (18) quenches the radiation-generated avalanche breakdown in the avalanche region, and also including a depletion electrode (15) arranged laterally alongside the laterally delimited lower diode layer (16), such that the depletion electrode (15) depletes the semiconductor substrate (11) laterally alongside t

Abstract: A strip detector for detecting ionizing particles and/or radiation, consisting of a silicon substrate which, at least on one substrate surface thereof, provides for n-doped zones spaced from each other as strips and voltage supply regions as well as a p-doped isolation zone between the n-doped zones, and including a first isolator layer as well as metal strips disposed above the n-doped zones, wherein immediately above the first isolated layer there is at least one further isolator layer provided and that at least one of the isolator layers is discontinuous in its projection above the intermediate zone of the two adjacent n-doped zones, and wherein the p-doped isolation zone presents a lateral distribution of concentration of the p-type doping material such that in the zone below the discontinuity of the discontinuous isolator layer, a higher concentration of doping material is present than in the isolation regions immediately adjacent to the n-doped zones.