Patents by Inventor Ladislav Dort

Ladislav Dort has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Power semiconductor device
    Patent number: 10079214
    Abstract: A power semiconductor device is disclosed having a power semiconductor element with an upper and lower side, the upper side being located opposite to the lower side; a first and second electrode, and a housing, wherein the power semiconductor element is arranged between the first and second electrode such, that the upper side comprises a first contact portion being in contact with the first electrode and a first free portion not being in contact with the first electrode, and wherein the lower side at least comprises a second contact portion being in contact with the second electrode, and wherein a channel is provided fluidly connecting at least a part of the first free portion with a predetermined degassing point of the housing for guiding an overpressure, which overpressure results from plasma and/or gas occurring in a failure mode, from the first free portion to the predetermined degassing point.
    Type: Grant
    Filed: July 21, 2016
    Date of Patent: September 18, 2018
    Assignee: ABB Schweiz AG
    Inventors: Jaroslav Homola, Ladislav Dort, Ladislav Radvan
  • POWER SEMICONDUCTOR DEVICE
    Publication number: 20160329286
    Abstract: A power semiconductor device is disclosed having a power semiconductor element with an upper and lower side, the upper side being located opposite to the lower side; a first and second electrode, and a housing, wherein the power semiconductor element is arranged between the first and second electrode such, that the upper side comprises a first contact portion being in contact with the first electrode and a first free portion not being in contact with the first electrode, and wherein the lower side at least comprises a second contact portion being in contact with the second electrode, and wherein a channel is provided fluidly connecting at least a part of the first free portion with a predetermined degassing point of the housing for guiding an overpressure, which overpressure results from plasma and/or gas occurring in a failure mode, from the first free portion to the predetermined degassing point.
    Type: Application
    Filed: July 21, 2016
    Publication date: November 10, 2016
    Inventors: Jaroslav Homola, Ladislav Dort, Ladislav Radvan