Patents by Inventor Lai-Fu Chen

Lai-Fu Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8462540
    Abstract: A static random access memory cell comprising a first inverter, a second inverter, a first transistor, a second transistor, and a third transistor. The first inverter is cross-coupled with the second inverter. The first transistor is connected with a write word line, a write bit line, and a first output node of the first inverter. The second transistor is connected with a complementary write bit line, the write word line, and a second output node of the second inverter. The third transistor is connected with a read bit line, a read word line, and the first input node of the first inverter to form a read port transistor, and a read port is formed. The read port transistor has a feature of asymmetric threshold voltage, and the read bit line swing can be expanded by the decrease of clamping current or the boosted read bit line.
    Type: Grant
    Filed: October 28, 2011
    Date of Patent: June 11, 2013
    Assignee: National Tsing Hua University
    Inventors: Meng-Fan Chang, Lai-Fu Chen, Jui-Jen Wu, Hiroyuki Yamauchi
  • Publication number: 20130107609
    Abstract: A static random access memory cell comprising a first inverter, a second inverter, a first transistor, a second transistor, and a third transistor. The first inverter is cross-coupled with the second inverter. The first transistor is connected with a write word line, a write bit line, and a first output node of the first inverter. The second transistor is connected with a complementary write bit line, the write word line, and a second output node of the second inverter. The third transistor is connected with a read bit line, a read word line, and the first input node of the first inverter to form a read port transistor, and a read port is formed. The read port transistor has a feature of asymmetric threshold voltage, and the read bit line swing can be expanded by the decrease of clamping current or the boosted read bit line.
    Type: Application
    Filed: October 28, 2011
    Publication date: May 2, 2013
    Applicant: NATIONAL TSING HUA UNIVERSITY
    Inventors: Meng-Fan Chang, Lai-Fu Chen, Jui-Jen Wu, Hiroyuki Yamauchi
  • Patent number: 6217281
    Abstract: A low-noise fan-filter unit for providing filtered airflow is disclosed. The fan-filter unit includes a housing having at least an air inlet and a coaxial air outlet; a centrifugal fan installed in the housing for drawing air into the housing and propelling it out of the air outlet; a filter installed between the fan and the air outlet for removing impurities from the air; and a noise reduction arrangement installed between the fan and the filter for reducing noise. The noise reduction arrangements includes three parting plates incorporating with the housing to form a tortuous air passageway which U-turns the airflow at least two times. The tortuous and extended air passageway, and some sound-absorbing materials furnished along the air passageway increase the contact area between the airflow and the sound-absorbing materials, and enhance the effect of noise absorption.
    Type: Grant
    Filed: June 30, 1999
    Date of Patent: April 17, 2001
    Assignee: Industrial Technology Research Institute
    Inventors: Ming-Shan Jeng, Ya-Wen Chou, Fang-Hei Tasu, Lai-Fu Chen, Pen-Chang Tseng
  • Patent number: D335685
    Type: Grant
    Filed: May 22, 1991
    Date of Patent: May 18, 1993
    Assignee: Aurora Mechatronics Corp.
    Inventor: Lai-Fu Chen
  • Patent number: D336915
    Type: Grant
    Filed: January 30, 1992
    Date of Patent: June 29, 1993
    Assignee: Aurora Mechatronics Corp.
    Inventor: Lai-Fu Chen