Abstract: A transparent electrode having optical filtering function includes a substrate and a conductive stack disposed on the substrate. The conductive stack includes a plurality of metal layers and a plurality of transparent conductive oxide (TCO) layers alternately arranged. A sheet resistance of the conductive stack is less than 35 ohms per square, and an average transmittance at a spectral range from 400 nm to 700 nm of the conductive stack is greater than 50%. An image sensor using the transparent electrode and a method of forming the transparent electrode are also disclosed.

Abstract: An electronic device includes a first electrode; a second electrode on the first electrode; a semiconductor layer between the first electrode and the second electrode; and a first self-assembled monolayer between the first electrode and the semiconductor layer. The first self-assembled monolayer includes a compound represented by Formula (1) below: X - R 2 - Si ? ( OR 1 ) 3 , ( 1 ) wherein in Formula (1), R1 are each independently a C1-C5 alkyl group; R2 is a C1-C20 alkylene group; and X is an electron withdrawing group.

Abstract: An optical device is provided. The optical device includes a substrate, a first photodetector, a waveguide and a nanowell array. The first photodetector is disposed on the substrate. The waveguide is disposed on the first photodetector. The waveguide is in contact with the first photodetector or apart from the first photodetector by a color filter array which is in contact with the waveguide and the first photodetector. The nanowell array is disposed on the waveguide. There is no multi-film filter in the optical device.

Abstract: An optical device is provided. The optical device includes a substrate, a first photodetector, a waveguide and a nanowell array. The first photodetector is disposed on the substrate. The waveguide is disposed on the first photodetector. The waveguide is in contact with the first photodetector or apart from the first photodetector by a color filter array which is in contact with the waveguide and the first photodetector. The nanowell array is disposed on the waveguide. There is no multi-film filter in the optical device.

Abstract: The present disclosure provides an image sensor and control method thereof. The image sensor includes a first transparent conductive layer, a second conductive layer, an optical sensor and a semiconductor substrate. The optical sensor is arranged between the first transparent conductive layer and the second conductive layer, and includes a photoelectric conversion layer, wherein the photoelectric conversion layer has a thickness ranging from 500 to 10000 nm, and the optical sensor has a plurality of absorption spectrum ranges. The semiconductor substrate is below the second conductive layer.

Abstract: A spectrometer includes a plurality of photodetectors, an anti-reflection layer, a grating layer, a distant layer, and a collimator. The anti-reflection layer is disposed on the plurality of photodetectors. The grating layer is disposed above the anti-reflection layer and includes a plurality of grating structures to spread a light into a spectrum to the plurality of photodetectors through the distant layer. The distant layer continuously extends from the grating layer to the anti-reflection layer, the distant layer has a thickness in a range from 400 ?m to 2000 ?m, and a refractive index of the grating layer is greater than a refractive index of the distant layer. The collimator is disposed above the grating layer, in which the collimator is configured to confine an incident angle of the light from a first micro-lens.

Abstract: The image sensor structure includes a substrate, a readout circuit array, a photoelectric layer and a filter layer. The filter layer has a first spectrum defining a first wavelength. The photoelectric layer has a second spectrum defining a second wavelength. The second wavelength is longer than the first wavelength. The first wavelength corresponds to a first line passing through a first point and a second point on a curve of the first spectrum of the filter layer. The first point aligns with an extinction coefficient of 0.9. The second point aligns with an extinction coefficient of 0.1. The second wavelength corresponds to a second line passing through a third point and a fourth point on a curve of the second spectrum of the photoelectric layer. The third point aligns with an extinction coefficient of 0.9. The fourth point aligns with an extinction coefficient of 0.1.

Abstract: An optical filter includes a substrate and a filtering stack disposed on the substrate. The filtering stack includes first layers and second layers, wherein the first layers and the second layers are alternately arranged. The second layers include a plasmonic transparent conducting film (TCF), wherein the plasmonic transparent conducting film is made of non-stoichiometric compounds.

Abstract: The present disclosure provides an image sensor and control method thereof. The image sensor includes a first transparent conductive layer, a second conductive layer, an optical sensor and a semiconductor substrate. The optical sensor is arranged between the first transparent conductive layer and the second conductive layer, and includes a photoelectric conversion layer, wherein the photoelectric conversion layer has a thickness ranging from 500 to 10000 nm, and the optical sensor has a plurality of absorption spectrum ranges. The semiconductor substrate is below the second conductive layer.

Abstract: A bio-chip is provided. The bio-chip includes a substrate and a first organic photoelectric conversion element disposed on the substrate. The first organic photoelectric conversion element defines pixel units. The bio-chip also includes a polarizing array disposed on the first organic photoelectric conversion element. The polarizing array includes polarizing sets, each polarizing set corresponds to one pixel unit and has sub-polarizing units that have different polarizing angles. The bio-chip further includes reaction sites disposed on the polarizing array. Each reaction site corresponds to one sub-polarizing unit.

Abstract: An optical device is provided. The optical device includes a time-of-flight (TOF) sensor array, a photon conversion thin film, and a light source. The photon conversion thin film is disposed above the time-of-flight sensor array. The light source emits light with a first wavelength towards the photon conversion thin film to be converted into light with a second wavelength received by the time-of-flight sensor array. The second wavelength is longer than the first wavelength.

Abstract: A spectrometer includes a plurality of photodetectors, an anti-reflection layer, a grating layer, a distant layer, and a collimator. The anti-reflection layer is disposed on the plurality of photodetectors. The grating layer is disposed above the anti-reflection layer and includes a plurality of grating structures to spread a light into a spectrum to the plurality of photodetectors through the distant layer. The distant layer continuously extends from the grating layer to the anti-reflection layer, the distant layer has a thickness in a range from 400 ?m to 2000 ?m, and a refractive index of the grating layer is greater than a refractive index of the distant layer. The collimator is disposed above the grating layer, in which the collimator is configured to confine an incident angle of the light from a first micro-lens.

Abstract: The spectrometer includes a lightguide substrate, an upper grating layer, a lower grating layer, an image sensor, and a readout circuit. The upper grating layer is disposed on the lightguide substrate and configured to receive a light. The upper grating layer includes a first grating structure, a second grating structure, and a third grating structure, and the first, second, and third grating structures have different grating periods. The lightguide substrate is configured to diffract the light when the light propagates into the lightguide substrate, such that multiple diffraction lights are formed and each of the multiple diffraction lights has different wavelengths and different optical path. The lower grating layer is disposed under the lightguide substrate and configured to emit the multiple diffraction lights. The image sensor is disposed under the lower grating layer. The readout circuit is disposed under the image sensor.

Abstract: The spectrometer includes a lightguide substrate, an upper grating layer, a lower grating layer, an image sensor, and a readout circuit. The upper grating layer is disposed on the lightguide substrate and configured to receive a light. The upper grating layer includes a first grating structure, a second grating structure, and a third grating structure, and the first, second, and third grating structures have different grating periods. The lightguide substrate is configured to diffract the light when the light propagates into the lightguide substrate, such that multiple diffraction lights are formed and each of the multiple diffraction lights has different wavelengths and different optical path. The lower grating layer is disposed under the lightguide substrate and configured to emit the multiple diffraction lights. The image sensor is disposed under the lower grating layer. The readout circuit is disposed under the image sensor.

Abstract: An optical device is provided. The optical device includes a time-of-flight (TOF) sensor array, a photon conversion thin film, and a light source. The photon conversion thin film is disposed above the time-of-flight sensor array. The light source emits light with a first wavelength towards the photon conversion thin film to be converted into light with a second wavelength received by the time-of-flight sensor array. The second wavelength is longer than the first wavelength.

Abstract: The image sensor structure includes a substrate, a readout circuit array, a photoelectric layer and a filter layer. The filter layer has a first spectrum defining a. first wavelength, The photoelectric layer has a second spectrum defining a second wavelength, The second wavelength is longer than the first wavelength. The first wavelength corresponds to a first line passing through a first point and a second point on a curve of the first spectrum of the filter layer. The first point aligns with an extinction coefficient of 0.9. The second point aligns with an extinction coefficient of 0.1. The second wavelength corresponds to a second line passing through a third. point and a fourth point on a curve of the second spectrum of the photoelectric layer. The third point aligns with an extinction coefficient of 0.9. The fourth point aligns with an extinction coefficient of 0.1.