Patents by Inventor Lai Lin Clare Yong

Lai Lin Clare Yong has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method to form alpha phase Ta and its application to IC manufacturing
    Patent number: 7294241
    Abstract: A method of sputtering a Ta layer comprised of alpha phase Ta on a Cu layer. An embodiment includes a Ta sputter deposition on a Cu surface at a substrate temperature less than 200° C. Another embodiment has a pre-cooling step at a temperature less than 100° C. prior to Ta layer sputter deposition. In another non-limiting example embodiment, a pre-clean step comprising an inert gas sputter is performed prior to the tantalum sputter. Another non-limiting example embodiment provides a semiconductor structure comprising: a semiconductor structure; a copper layer over the semiconductor structure; a tantalum layer on the copper layer; the tantalum layer comprised alpha phase Ta; a metal layer on the tantalum layer.
    Type: Grant
    Filed: January 3, 2003
    Date of Patent: November 13, 2007
    Assignee: Chartered Semiconductor Manufacturing Ltd.
    Inventors: Chim Seng Seet, Bei Chao Zhang, San Leong Liew, John Sudijono, Lai Lin Clare Yong
  • Method to form alpha phase Ta and its application to IC manufacturing
    Publication number: 20040131878
    Abstract: A method of sputtering a Ta layer comprised of alpha phase Ta on a Cu layer. An embodiment includes a Ta sputter deposition on a Cu surface at a substrate temperature less than 200° C. Another embodiment has a pre-cooling step at a temperature less than 100° C. prior to Ta layer sputter deposition. In another non-limiting example embodiment, a pre-clean step comprising an inert gas sputter is performed prior to the tantalum sputter. Another non-limiting example embodiment provides a semiconductor structure comprising: a semiconductor structure; a copper layer over the semiconductor structure; a tantalum layer on the copper layer; the tantalum layer comprised alpha phase Ta; a metal layer on the tantalum layer.
    Type: Application
    Filed: January 3, 2003
    Publication date: July 8, 2004
    Inventors: Chim Seng Seet, Bei Chao Zhang, San Leong Liew, John Sudijono, Lai Lin Clare Yong