Abstract: A memory device with adaptive sense time tables is disclosed. In order to maintain a desired (initial or preset) threshold voltage distribution, the sense time is adjusted as the program-erase cycle count increases. The program-erase cycle process tends to wear down memory cells, causing the QPW window to expand and the threshold voltage to widen. However, by adjusting (i.e., reducing) the sense time for increased program-erase cycles, the QPW window and the threshold voltage can be at least substantially maintained. Additionally, systems and methods for adjusting sense time based on die-to-die variations are also disclosed.

Abstract: Methods for light-induced electroplating of aluminum are disclosed herein. Exemplary methods may comprise preparing an ionic liquid comprising aluminum chloride (AlCl3) and an organic halide, placing the silicon substrate into the ionic liquid, illuminating the silicon substrate, the illumination passing through the ionic liquid, and depositing aluminum onto the silicon substrate via a light-induced electroplating process, wherein the light-induced electroplating process utilizes an applied current that does not exceed a photo-generated current generated by the illumination.

Abstract: The present disclosure provides for improving data retention reliability. During a programming operation associated with a memory cell, after the memory cell passes verification of a first verification voltage level, a second verification voltage level can be applied to the memory cell. Based on a comparison of the voltage in the memory cell with the second verification voltage level, a bit line voltage may be applied. Based on the applied bit line voltage, fast bits associated with the memory cell can be upshifted to an upper portion of a final voltage distribution associated with the programming operation. Upshifting the fast bits counteracts the downshifting effect in a final voltage distribution that may be caused by charge leakage or electron loss.

Abstract: The present disclosure provides for improving data retention reliability. During a programming operation associated with a memory cell, after the memory cell passes verification of a first verification voltage level, a second verification voltage level can be applied to the memory cell. Based on a comparison of the voltage in the memory cell with the second verification voltage level, a bit line voltage may be applied. Based on the applied bit line voltage, fast bits associated with the memory cell can be upshifted to an upper portion of a final voltage distribution associated with the programming operation. Upshifting the fast bits counteracts the downshifting effect in a final voltage distribution that may be caused by charge leakage or electron loss.

Abstract: A memory device with adaptive sense time tables is disclosed. In order to maintain a desired (initial or preset) threshold voltage distribution, the sense time is adjusted as the program-erase cycle count increases. The program-erase cycle process tends to wear down memory cells, causing the QPW window to expand and the threshold voltage to widen. However, by adjusting (i.e., reducing) the sense time for increased program-erase cycles, the QPW window and the threshold voltage can be at least substantially maintained. Additionally, systems and methods for adjusting sense time based on die-to-die variations are also disclosed.

Abstract: Methods for light-induced electroplating of aluminum are disclosed herein. Exemplary methods may comprise preparing an ionic liquid comprising aluminum chloride (AlCl3) and an organic halide, placing the silicon substrate into the ionic liquid, illuminating the silicon substrate, the illumination passing through the ionic liquid, and depositing aluminum onto the silicon substrate via a light-induced electroplating process, wherein the light-induced electroplating process utilizes an applied current that does not exceed a photo-generated current generated by the illumination.

Abstract: Methods for light-induced electroplating of aluminum are disclosed herein. Exemplary methods may comprise preparing an ionic liquid comprising aluminum chloride (AlCl3) and an organic halide, placing the silicon substrate into the ionic liquid, illuminating the silicon substrate, the illumination passing through the ionic liquid, and depositing aluminum onto the silicon substrate via a light-induced electroplating process, wherein the light-induced electroplating process utilizes an applied current that does not exceed a photo-generated current generated by the illumination.