Patents by Inventor Laila Francisco

Laila Francisco has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of making a silicon-containing film
    Patent number: 8603426
    Abstract: A method of making hydrogenated Group IVA compounds having reduced metal-based impurities, compositions and inks including such Group IVA compounds, and methods for forming a semiconductor thin film. Thin semiconducting films prepared according to the present invention generally exhibit improved conductivity, film morphology and/or carrier mobility relative to an otherwise identical structure made by an identical process, but without the washing step. In addition, the properties of the present thin film are generally more predictable than those of films produced from similarly prepared (cyclo)silanes that have not been washed according to the present invention.
    Type: Grant
    Filed: December 28, 2012
    Date of Patent: December 10, 2013
    Assignee: Kovio, Inc.
    Inventors: Klaus Kunze, Wenzhuo Guo, Fabio Zürcher, Mao Takashima, Laila Francisco, Joerg Rockenberger, Brent Ridley
  • Silane compositions, methods of making the same, method for forming a semiconducting and/or silicon-containing film, and thin film structures formed therefrom
    Patent number: 8367031
    Abstract: A method of making hydrogenated Group IVA compounds having reduced metal-based impurities, compositions and inks including such Group IVA compounds, and methods for forming a semiconductor thin film. Thin semiconducting films prepared according to the present invention generally exhibit improved conductivity, film morphology and/or carrier mobility relative to an otherwise identical structure made by an identical process, but without the washing step. In addition, the properties of the present thin film are generally more predictable than those of films produced from similarly prepared (cyclo)silanes that have not been washed according to the present invention.
    Type: Grant
    Filed: January 13, 2012
    Date of Patent: February 5, 2013
    Assignee: Kovio, Inc.
    Inventors: Klaus Kunze, Wenzhuo Guo, Fabio Zurcher, Mao Takashima, Laila Francisco, Joerg Rockenberger, Brent Ridley
  • Methods of making silane compositions
    Patent number: 8124040
    Abstract: A method of making hydrogenated Group IVA compounds having reduced metal-based impurities, compositions and inks including such Group IVA compounds, and methods for forming a semiconductor thin film. Thin semiconducting films prepared according to the present invention generally exhibit improved conductivity, film morphology and/or carrier mobility relative to an otherwise identical structure made by an identical process, but without the washing step. In addition, the properties of the present thin film are generally more predictable than those of films produced from similarly prepared (cyclo)silanes that have not been washed according to the present invention.
    Type: Grant
    Filed: August 17, 2010
    Date of Patent: February 28, 2012
    Assignee: Kovio, Inc.
    Inventors: Klaus Kunze, Wenzhuo Guo, Fabio Zurcher, Mao Takashima, Laila Francisco, Joerg Rockenberger, Brent Ridley
  • Silane compositions, methods of making the same, method for forming a semiconducting and/or silicon-containing film, and thin film structures formed therefrom
    Patent number: 7799302
    Abstract: A method of making hydrogenated Group IVA compounds having reduced metal-based impurities, compositions and inks including such Group IVA compounds, and methods for forming a semiconductor thin film. Thin semiconducting films prepared according to the present invention generally exhibit improved conductivity, film morphology and/or carrier mobility relative to an otherwise identical structure made by an identical process, but without the washing step. In addition, the properties of the present thin film are generally more predictable than those of films produced from similarly prepared (cyclo)silanes that have not been washed according to the present invention.
    Type: Grant
    Filed: November 2, 2007
    Date of Patent: September 21, 2010
    Assignee: Kovio, Inc.
    Inventors: Klaus Kunze, Wenzhuo Guo, Fabio Zurcher, Mao Takashima, Laila Francisco, Joerg Rockenberger, Brent Ridley
  • Method of making silane compositions
    Patent number: 7498015
    Abstract: A method of making hydrogenated Group IVA compounds having reduced metal-based impurities, compositions and inks including such Group IVA compounds, and methods for forming a semiconductor thin film. Thin semiconducting films prepared according to the present invention generally exhibit improved conductivity, film morphology and/or carrier mobility relative to an otherwise identical structure made by an identical process, but without the washing step. In addition, the properties of the present thin film are generally more predictable than those of films produced from similarly prepared (cyclo)silanes that have not been washed according to the present invention.
    Type: Grant
    Filed: February 27, 2004
    Date of Patent: March 3, 2009
    Assignee: Kovio, Inc.
    Inventors: Klaus Kunze, Wenzhuo Guo, Fabio Zurcher, Mao Ito, Laila Francisco, Joerg Rockenberger, Brent Ridley