Patents by Inventor Laisheng Sun
Laisheng Sun has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20220380705Abstract: A method and cleaning composition for microelectronic devices or semiconductor substrates including at least one N alkanolamine; at least one hydroxylamine or derivatives of hydroxylamine or mixtures thereof; at least one polyfunctional organic acid with at least two carboxylic acid groups and water. The cleaning compositions can further include at least one corrosion inhibitor.Type: ApplicationFiled: September 24, 2020Publication date: December 1, 2022Applicant: Versum Materials US, LLCInventors: LAISHENG SUN, LILI WANG, AIPING WU, YI-CHIA LEE, TIANNIU CHEN
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Publication number: 20220333044Abstract: Cleaning compositions and the method of using the same are disclosed, where the compositions include one or more alkanolamines, one or more ether alcohol solvents or aromatic containing alcohol, one or more corrosion inhibitors, and optionally one or more secondary solvents.Type: ApplicationFiled: September 28, 2020Publication date: October 20, 2022Applicant: Versum Materials US, LLCInventors: YUANMEI CAO, MICHAEL PHENIS, LILI WANG, LAISHENG SUN, AIPING WU
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Publication number: 20220298417Abstract: Described herein is an etching solution suitable for the selective removal of silicon over p-doped silicon and/or silicon-germanium from a microelectronic device, having water; at least one of NH4OH or a quaternary ammonium hydroxide; at least one compound selected from benzoquinone or a derivative of benzoquinone; quinoline or a derivative of quinoline; an unsubstituted or substituted C6-20 aliphatic acid; a C4-12 alkylamine; and a polyalkylenimine; optionally at least one water-miscible organic solvent; and optionally, at least one compound selected from an alkanolamine and a polyamine.Type: ApplicationFiled: June 12, 2020Publication date: September 22, 2022Applicant: Versum Materials US, LLCInventors: Wen Dar Liu, YI-CHIA LEE, CHUNG-YI CHANG, AIPING WU, LAISHENG SUN
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Publication number: 20220298182Abstract: The disclosed and claimed subject matter is directed to an etching composition that includes (A) phosphoric acid and (B) a mixture that includes (i) a silicon-containing compound and (ii) an aqueous solvent. In some embodiments, the etching compositions include additional ingredients. The etching compositions are useful for the selective removal of silicon nitride over silicon oxide from a microelectronic device having such material(s) thereon during its manufacture.Type: ApplicationFiled: September 28, 2020Publication date: September 22, 2022Applicant: Versum Materials US, LLCInventors: Jhih Kuei Ge, YI-CHIA LEE, WEN DAR LIU, AIPING WU, LAISHENG SUN
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Publication number: 20220251480Abstract: This disclosed and claimed subject matter relates to a post etch residue cleaning compositions that include an alkanolamine having two or more or more than two alkanol groups, an alpha-hydroxy acid and water as well as methods for use thereof in microelectronics manufacturing.Type: ApplicationFiled: July 14, 2020Publication date: August 11, 2022Applicant: Versum Materials US, LLCInventors: Laisheng Sun, LILI WANG, ALPING WU, YI-CHIA LEE, TIANNIU R. CHEN
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Publication number: 20220243150Abstract: Compositions and methods useful for removing residue and photoresist from a semiconductor substrate comprising: from about 5 to about 60% by wt. of water; from about 10 to about 90% by wt. of a water-miscible organic solvent; from about 5 to about 90% by wt. of at least one alkanolamine; from about 0.05 to about 20% by wt. of at least one polyfunctional organic acid; and from about 0.1 to about 10% by wt. of at least one phenol-type corrosion inhibitor, wherein the composition is substantially free of hydroxylamine.Type: ApplicationFiled: June 15, 2020Publication date: August 4, 2022Applicant: Versum Materials US, LLCInventors: LILI WANG, AIPING WU, LAISHENG SUN, YI-CHIA LEE, YUANMEI CAO
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Publication number: 20220228062Abstract: The disclosed and claimed subject matter is directed to an etching composition that includes (A) phosphoric acid and (B) a mixture that includes (i) a silicon-containing compound and (ii) an aqueous solvent. In some embodiments, the etching compositions include additional ingredients. The etching compositions are useful for the selective removal of silicon nitride over silicon oxide from a microelectronic device having such material(s) thereon during its manufacture.Type: ApplicationFiled: March 28, 2022Publication date: July 21, 2022Inventors: Jhih Kuei Ge, YI-CHIA LEE, WEN DAR LIU, AIPING WU, LAISHENG SUN
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Patent number: 11091727Abstract: A microelectronic device (semiconductor substrate) cleaning composition is provided that comprises water; oxalic acid, and two or more corrosion inhibitors and methods of using the same.Type: GrantFiled: June 28, 2019Date of Patent: August 17, 2021Assignee: Versum Materials US, LLCInventors: Laisheng Sun, Yi-Chia Lee, Lili Wang, Aiping Wu
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Patent number: 11035044Abstract: Described herein is an etching solution suitable for both tungsten-containing metals and GST metals, which comprises: water; at least one phenolic derivative compound having at least two hydroxyl groups; at least one strong base selected from the group consisting of (i) a quaternary base; (ii) an organic amine; and (iii) a metal hydroxide; optionally an ammonium salt of an organic acid; and optionally a water-miscible solvent, wherein the pH of the etching solution is 10 or greater, and wherein the etching solution is substantially free of a peroxide oxidizer and a metal ion-containing oxidizer.Type: GrantFiled: January 16, 2018Date of Patent: June 15, 2021Assignee: Versum Materials US, LLCInventors: Wen Dar Liu, Laisheng Sun, Yi-Chia Lee, Tianniu Chen, Gang Chris Han-Adebekun
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Patent number: 10557107Abstract: A cleaning composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The cleaning compositions are substantially devoid of alkali hydroxides, alkaline earth metal hydroxides, and tetramethylammonium hydroxide. The composition achieves highly efficacious cleaning of the post-CMP residue and contaminant material from the surface of the microelectronic device without compromising the low-k dielectric material or the copper interconnect material.Type: GrantFiled: May 4, 2018Date of Patent: February 11, 2020Assignee: ENTEGRIS, INC.Inventors: Laisheng Sun, Peng Zhang, Jun Liu, Steven Medd, Jeffrey A. Barnes, Shrane Ning Jenq
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Publication number: 20200032177Abstract: A microelectronic device (semiconductor substrate) cleaning composition is provided that comprises water; oxalic acid, and two or more corrosion inhibitors and methods of using the same.Type: ApplicationFiled: June 28, 2019Publication date: January 30, 2020Inventors: Laisheng Sun, Yi-Chia Lee, Lili Wang, Aiping Wu
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Patent number: 10176979Abstract: An amine-free composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The amine-free composition preferably includes at least one oxidizing agent, at least one complexing agent, at least one basic compound, and water and has a pH in the range from about 2.5 to about 11.5. The composition achieves highly efficacious cleaning of the post-CMP residue and contaminant material from the surface of the microelectronic device without compromising the low-k dielectric material or the copper interconnect material.Type: GrantFiled: February 15, 2013Date of Patent: January 8, 2019Assignee: Entegris, Inc.Inventors: Jun Liu, Jeffrey A. Barnes, Emanuel I. Cooper, Laisheng Sun, Elizabeth Thomas, Jason Chang
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Publication number: 20180251712Abstract: A cleaning composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The cleaning compositions are substantially devoid of alkali hydroxides, alkaline earth metal hydroxides, and tetramethylammonium hydroxide. The composition achieves highly efficacious cleaning of the post-CMP residue and contaminant material from the surface of the microelectronic device without compromising the low-k dielectric material or the copper interconnect material.Type: ApplicationFiled: May 4, 2018Publication date: September 6, 2018Inventors: Laisheng Sun, Peng Zhang, Jun Liu, Steven Medd, Jeffrey A. Bames, Shrane Ning Jenq
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Publication number: 20180209049Abstract: Described herein is an etching solution suitable for both tungsten-containing metals and GST metals, which comprises: water; at least one phenolic derivative compound having at least two hydroxyl groups; at least one strong base selected from the group consisting of (i) a quaternary base; (ii) an organic amine; and (iii) a metal hydroxide; optionally an ammonium salt of an organic acid; and optionally a water-miscible solvent, wherein the pH of the etching solution is 10 or greater, and wherein the etching solution is substantially free of a peroxide oxidizer and a metal ion-containing oxidizer.Type: ApplicationFiled: January 16, 2018Publication date: July 26, 2018Applicant: Versum Materials US, LLCInventors: Wen Dar Liu, Laisheng Sun, Yi-Chia Lee, Tianniu Chen, Gang Chris Han-Adebekun
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Publication number: 20160340620Abstract: A cleaning composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The cleaning compositions are substantially devoid of alkali hydroxides, alkaline earth metal hydroxides, and tetramethylammonium hydroxide. The composition achieves highly efficacious cleaning of the post-CMP residue and contaminant material from the surface of the microelectronic device without compromising the low-k dielectric material or the copper interconnect material.Type: ApplicationFiled: January 29, 2015Publication date: November 24, 2016Inventors: Laisheng SUN, Peng ZHANG, Jun LIU, Steven MEDD, Jeffrey A. BARNES, Shrane Ning JENQ
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Publication number: 20160122696Abstract: A removal composition and process for cleaning post-chemical mechanical polishing (CMP) contaminants and ceria particles from a microelectronic device having said particles and contaminants thereon. The removal compositions include at least one surfactant. The composition achieves highly efficacious removal of the ceria particles and CMP contaminant material from the surface of the microelectronic device without compromising the low-k dielectric, silicon nitride, or tungsten-containing materials.Type: ApplicationFiled: May 14, 2014Publication date: May 5, 2016Inventors: Jun LIU, Laisheng SUN
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Publication number: 20160075971Abstract: A cleaning composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The cleaning compositions include corrosion inhibitor(s) and surfactant(s). The composition achieves highly efficacious cleaning of the post-CMP residue and contaminant material from the surface of the microelectronic device without compromising the low-k dielectric material or the copper interconnect material.Type: ApplicationFiled: April 22, 2014Publication date: March 17, 2016Applicant: ADVANCED TECHNOLOGY MATERIALS, INC.Inventors: Jun LIU, Laisheng SUN, Steven MEDD, Jeffrey A. BARNES, Peter WRSCHKA, Elizabeth THOMAS
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Publication number: 20160020087Abstract: An amine-free composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The amine-free composition preferably includes at least one oxidizing agent, at least one complexing agent, at least one basic compound, and water and has a pH in the range from about 2.5 to about 11.5. The composition achieves highly efficacious cleaning of the post-CMP residue and contaminant material from the surface of the microelectronic device without compromising the low-k dielectric material or the copper interconnect material.Type: ApplicationFiled: February 15, 2013Publication date: January 21, 2016Applicant: ENTEGRIS, INC.Inventors: Jun LIU, Jeffrey A. BARNES, Emanuel I. COOPER, Laisheng SUN, Elizabeth THOMAS, Jason CHANG
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Publication number: 20150045277Abstract: A cleaning composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The cleaning compositions include at least one quaternary base, at least one amine, at least one azole corrosion inhibitor, at least one reducing agent, and at least one solvent. The composition achieves highly efficacious cleaning of the post-CMP residue and contaminant material from the surface of the microelectronic device while being compatible with barrier layers, wherein the barrier layers are substantially devoid of tantalum or titanium.Type: ApplicationFiled: March 14, 2013Publication date: February 12, 2015Applicant: Entegris, Inc.Inventors: Jun Liu, Trace Quentin Hurd, Laisheng Sun, Steven Medd, Shrane Ning Jenq