Abstract: A solar panel assembly is selectively positionable by a user to collect solar rays from a sun. The solar panel assembly comprises a first solar panel, a second solar panel, and a flexible, first connector. The first solar panel and the second solar panel are configured to collect solar rays from the sun. Additionally, the first connector mechanically and electrically connects the first solar panel to the second solar panel so that the first solar panel and the second solar panel are selectively movable between an open configuration where the solar panels are positioned substantially side-by-side in a planar array and a closed configuration where the solar panels are stacked substantially on top of one another. The first connector can include a perforated metal conductor that is coupled to and extends between the first solar panel and the second solar panel.

Abstract: A system and method for two-sided etch of a semiconductor substrate. Reactive species are generated and flowed toward a substrate for processing. A diverter is positioned between the generation chamber and the substrate. A portion of the reactive species flows through the diverter for processing the front of the substrate. Another portion is diverted around the substrate to the backside for processing. A flow restricter is placed between the substrate and the exhaust system to increase the residence time of reactive species adjacent to the backside.

Abstract: A system and method for two-sided etch of a semiconductor substrate. Reactive species are generated and flowed toward a substrate for processing. A diverter is positioned between the generation chamber and the substrate. A portion of the reactive species flows through the diverter for processing the front of the substrate. Another portion is diverted around the substrate to the backside for processing. A flow restricter is placed between the substrate and the exhaust system to increase the residence time of reactive species adjacent to the backside.

Abstract: A system and method for two-sided etch of a semiconductor substrate. Reactive species are generated and flowed toward a substrate for processing. A diverter is positioned between the generation chamber and the substrate. A portion of the reactive species flows through the diverter for processing the front of the substrate. Another portion is diverted around the substrate to the backside for processing. A flow restricter is placed between the substrate and the exhaust system to increase the residence time of reactive species adjacent to the backside.

Abstract: A system and method for two-sided etch of a semiconductor substrate. Reactive species are generated and flowed toward a substrate for processing. A diverter is positioned between the generation chamber and the substrate. A portion of the reactive species flows through the diverter for processing the front of the substrate. Another portion is diverted around the substrate to the backside for processing. A flow restricter is placed between the substrate and the exhaust system to increase the residence time of reactive species adjacent to the backside.

Abstract: A process for removal of photoresist present on a polymer dielectric on a semiconductor substrate and for removal of photoresist residues on the inside walls of microvias formed in the dielectric layer. The process is conducted by generating a plasma in a plasma generator from a gas comprising one or more fluorine compound containing etchant gases and etching the substrate having a dielectric layer thereon, and a photoresist layer on the dielectric layer and on the inside walls of microvias formed in the dielectric layer. The etching is conducted at a temperature of from about 0° C. to about 90° C. and at a pressure of from about 10 torr or less, to thereby remove the photoresist present on the dielectric layer and on the inside walls of the microvias.