Patents by Inventor Lakmal Kalutarage

Lakmal Kalutarage has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • SELECTIVE ETCH OF A SUBSTRATE
    Publication number: 20230420259
    Abstract: Described herein is a method for selectively cleaning and/or etching a sample. The method includes selectively forming a film in a trench of a substrate such that the trench may be selectively etched. A polymer film is deposited on the bottom surface of the trench without being deposited on the side wall. A second film is selectively formed in the trench without forming the second film on the polymer film. The polymer is then removed from the bottom surface of the trench and then etching is performed on the bottom surface of the trench using an etch chemistry, wherein the second film protects the side wall from being etched.
    Type: Application
    Filed: June 9, 2022
    Publication date: December 28, 2023
    Inventors: David Thompson, Bhaskar Jyoti Bhuyan, Mark Saly, Lisa Enman, Aaron Dangerfield, Jesus Candelario Mendoza, Jeffrey W. Anthis, Lakmal Kalutarage
  • PHOTORESISTS BY PHYSICAL VAPOR DEPOSITION
    Publication number: 20220197146
    Abstract: Embodiments include a method of forming a metal oxo photoresist on a substrate. In an embodiment, the method comprises providing a target in a vacuum chamber, where the target comprises a metal. The method may continue with flowing a hydrocarbon gas and an inert gas into the vacuum chamber, and striking a plasma in the vacuum chamber. In an embodiment, the method further continues with depositing the metal oxo photoresist on the substrate, where the metal oxo photoresist comprise metal-carbon bonds and metal-oxygen bonds.
    Type: Application
    Filed: September 1, 2021
    Publication date: June 23, 2022
    Inventors: Lauren Bagby, Stephen Weeks, Aaron Dangerfield, Lakmal Kalutarage, Jeffrey Anthis, Mark Saly, Regina Freed, Wayne French, Kelvin Chan
  • Low temperature molecular layer deposition of SiCON
    Patent number: 9812318
    Abstract: Methods for the deposition of a SiCON film by molecular layer deposition using a multi-functional amine and a silicon containing precursor having a reactive moiety.
    Type: Grant
    Filed: July 16, 2015
    Date of Patent: November 7, 2017
    Assignee: Applied Materials, Inc.
    Inventors: Mark Saly, David Thompson, Lakmal Kalutarage
  • Chemical Infiltration into Porous Dielectric Films
    Publication number: 20170117144
    Abstract: Methods for modifying the properties of a porous film are described. An infiltrating material is deposited within the pores of the porous film.
    Type: Application
    Filed: October 21, 2016
    Publication date: April 27, 2017
    Inventors: Lakmal Kalutarage, Mark Saly, David Thompson
  • Methods Of Depositing Flowable Films Comprising SiO and SiN
    Publication number: 20170114465
    Abstract: Provided are methods for depositing flowable films comprising SiO or SiN. Certain methods comprise exposing a substrate surface to a siloxane or silazane precursor; exposing the substrate surface to a plasma-activated co-reactant to provide a SiON intermediate film; UV curing the SiON intermediate film to provide a cured intermediate film; and annealing the cured intermediate film to provide a film comprising SiO or SiN.
    Type: Application
    Filed: October 19, 2016
    Publication date: April 27, 2017
    Inventors: Lakmal Kalutarage, Mark Saly, David Thompson
  • Low Temperature Molecular Layer Deposition Of SiCON
    Publication number: 20160024647
    Abstract: Methods for the deposition of a SiCON film by molecular layer deposition using a multi-functional amine and a silicon containing precursor having a reactive moiety.
    Type: Application
    Filed: July 16, 2015
    Publication date: January 28, 2016
    Inventors: Mark Saly, David Thompson, Lakmal Kalutarage