Patents by Inventor Lakshmanna Vishnubholta

Lakshmanna Vishnubholta has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of forming a finFET and structure
    Patent number: 7910482
    Abstract: A method for processing a substrate comprising at least a buried oxide (BOX) layer and a semiconductor material layer is provided. The method includes etching the semiconductor material layer to form a vertical semiconductor material structure overlying the BOX layer, leaving an exposed portion of the BOX layer. The method further includes exposing a top surface of the exposed portion of the BOX layer to an oxide etch resistant species to form a thin oxide etch resistant layer overlying the exposed portion of the BOX layer.
    Type: Grant
    Filed: May 30, 2008
    Date of Patent: March 22, 2011
    Assignee: Freescale Semiconductor, Inc.
    Inventors: Tab A. Stephens, Leo Mathew, Lakshmanna Vishnubholta, Bruce E. White
  • METHOD OF FORMING A FINFET AND STRUCTURE
    Publication number: 20090294919
    Abstract: A method for processing a substrate comprising at least a buried oxide (BOX) layer and a semiconductor material layer is provided. The method includes etching the semiconductor material layer to form a vertical semiconductor material structure overlying the BOX layer, leaving an exposed portion of the BOX layer. The method further includes exposing a top surface of the exposed portion of the BOX layer to an oxide etch resistant species to form a thin oxide etch resistant layer overlying the exposed portion of the BOX layer.
    Type: Application
    Filed: May 30, 2008
    Publication date: December 3, 2009
    Inventors: Tab A. Stephens, Leo Mathew, Lakshmanna Vishnubholta, Bruce E. White