Patents by Inventor Lakshmi Nittala

Lakshmi Nittala has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • ATOMIC LAYER REMOVAL PROCESS WITH HIGHER ETCH AMOUNT
    Publication number: 20150118848
    Abstract: Higher overall etch rate and throughput for atomic layer removal (ALR) is achieved. The reaction is a self-limiting process, thus limiting the total amount of material that may be etched per cycle. By pumping down the process station between reacting operations, the reaction is partially “reset.” A higher overall etch rate is achieved by a multiple exposure with pump down ALR process.
    Type: Application
    Filed: November 3, 2014
    Publication date: April 30, 2015
    Inventors: Nerissa Draeger, Harald te Nijenhuis, Henner Meinhold, Bart van Schravendijk, Lakshmi Nittala
  • Atomic layer removal process with higher etch amount
    Patent number: 8058179
    Abstract: Higher overall etch rate and throughput for atomic layer removal (ALR) is achieved. The reaction is a self-limiting process, thus limiting the total amount of material that may be etched per cycle. By pumping down the process station between reacting operations, the reaction is partially “reset.” A higher overall etch rate is achieved by a multiple exposure with pump down ALR process.
    Type: Grant
    Filed: December 23, 2008
    Date of Patent: November 15, 2011
    Assignee: Novellus Systems, Inc.
    Inventors: Nerissa Draeger, Harald te Nijenhuis, Henner Meinhold, Bart van Schravendijk, Lakshmi Nittala