Abstract: Provided are methods of filling gaps on a substrate by creating flowable silicon oxide-containing films. The methods involve introducing vapor-phase silicon-containing precursor and oxidant reactants into a reaction chamber containing the substrate under conditions such that a condensed flowable film is formed on the substrate. The flowable film at least partially fills gaps on the substrate. In certain embodiments, the methods involve using a catalyst in the formation of the film. The catalyst may be incorporated into one of the reactants and/or introduced as a separate reactant.

Abstract: Methods and apparatus for filling gaps on partially manufactured semiconductor substrates with dielectric material are provided. In certain embodiments, the methods include introducing a first process gas into the processing chamber and accumulating a second process gas in an accumulator maintained at a pressure level substantially highest than that of the processing chamber pressure level. The second process gas is then rapidly introduced from the accumulator into the processing chamber. An excess amount of the second process gas may be provided in the processing chamber during the introduction of the second process gas. Flowable silicon-containing films forms on a surface of the substrate to at least partially fill the gaps.

Abstract: Methods for depositing flowable dielectric films are provided. In some embodiments, the methods involve introducing a silicon-containing precursor to a deposition chamber wherein the precursor is characterized by having a partial pressure:vapor pressure ratio between 0.01 and 1. In some embodiments, the methods involve depositing a high density plasma dielectric film on a flowable dielectric film. The high density plasma dielectric film may fill a gap on a substrate. Also provided are apparatuses for performing the methods.

Abstract: Novel gap fill schemes involving depositing both flowable oxide films and high density plasma chemical vapor deposition oxide (HDP oxide) films are provided. According to various embodiments, the flowable oxide films may be used as a sacrificial layer and/or as a material for bottom up gap fill. In certain embodiments, the top surface of the filled gap is an HDP oxide film. The resulting filled gap may be filled only with HDP oxide film or a combination of HDP oxide and flowable oxide films. The methods provide improved top hat reduction and avoid clipping of the structures defining the gaps.

Abstract: Provided herein are novel pre-metal dielectric (PMD) integration schemes. According to various embodiments, the methods involve depositing flowable dielectric material to fill trenches or other gaps between gate structures in a front end of line (FEOL) fabrication process. The flowable dielectric material may be partially densified to form dual density filled gaps having a low density region capped by a high density region. In certain embodiments, the methods include further treating at least a portion of the gap fill material after subsequent process operations such as chemical mechanical planarization (CMP) or contact etching.

Abstract: Methods and apparatus for filling gaps on partially manufactured semiconductor substrates with dielectric material are provided. In certain embodiments, the methods include introducing a first process gas into the processing chamber and accumulating a second process gas in an accumulator maintained at a pressure level substantially highest than that of the processing chamber pressure level. The second process gas is then rapidly introduced from the accumulator into the processing chamber. An excess amount of the second process gas may be provided in the processing chamber during the introduction of the second process gas. Flowable silicon-containing films forms on a surface of the substrate to at least partially fill the gaps.

Abstract: Provided are novel methods of filling gaps with a flowable dielectric material. According to various embodiments, the methods involve performing a surface treatment on the gap to enhance subsequent bottom up fill of the gap. In certain embodiments, the treatment involves exposing the surface to activated species, such as activated species of one or more of nitrogen, oxygen, and hydrogen. In certain embodiments, the treatment involves exposing the surface to a plasma generated from a mixture of nitrogen and oxygen. The treatment may enable uniform nucleation of the flowable dielectric film, reduce nucleation delay, increase deposition rate and enhance feature-to-feature fill height uniformity.

Abstract: Novel gap fill schemes involving depositing both flowable oxide films and high density plasma chemical vapor deposition oxide (HDP oxide) films are provided. According to various embodiments, the flowable oxide films may be used as a sacrificial layer and/or as a material for bottom up gap fill. In certain embodiments, the top surface of the filled gap is an HDP oxide film. The resulting filled gap may be filled only with HDP oxide film or a combination of HDP oxide and flowable oxide films. The methods provide improved top hat reduction and avoid clipping of the structures defining the gaps.