Patents by Inventor Lakshminarayanan Alampoondi Venkatesan

Lakshminarayanan Alampoondi Venkatesan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20230369338
    Abstract: Disclosed is a silicon on insulator (SOI) radio frequency (RF) module with noise reduction shielding to mitigate radio frequency interference (RFI) between active circuit devices within the module. The RF module includes various semiconductor active devices disposed upon an insulating substrate. The RF module can be a front-end module (FEM) with one or more charge pumps as active devices. A polysilicon web extends between and underneath the devices to create a network of ground paths across a surface of the insulating substrate. The ground paths effectively conduct RF noise to a circuit ground, causing the polysilicon ground web to eliminate or substantially attenuate RFI produced by the active devices without altering signal characteristics of the RF module. The disclosed solution also reduces RF noise leakage into the substrate, and can reduce RFI between neighboring RF modules.
    Type: Application
    Filed: May 15, 2023
    Publication date: November 16, 2023
    Inventors: Ambarish Roy, Richard Peter Gulezian, II, Lakshminarayanan Alampoondi Venkatesan, Nuttapong Srirattana
  • Publication number: 20230369337
    Abstract: Disclosed is silicon on insulator (SOI) radio frequency (RF) module with noise reduction shielding to mitigate radio frequency interference (RFI) between active circuit devices within the module. The RF module includes various semiconductor active devices disposed upon an insulating substrate. The RF module can be a front-end module (FEM) with one or more charge pumps as active devices. A polysilicon web extends between and underneath the devices to create a network of ground paths across a surface of the insulating substrate. The ground paths effectively conduct RF noise to a circuit ground, causing the polysilicon ground web to eliminate or substantially attenuate RFI produced by the active devices without altering signal characteristics of the RF module. The disclosed solution also reduces RF noise leakage into the substrate, and can reduce RFI between neighboring RF modules.
    Type: Application
    Filed: May 15, 2023
    Publication date: November 16, 2023
    Inventors: Ambarish Roy, Richard Peter Gulezian, II, Lakshminarayanan Alampoondi Venkatesan, Nuttapong Srirattana