Abstract: A method of fabricating a two dimensional thermoelectric device includes forming dissimilar atomic layers having quantum electron transport properties, and forming a well-defined interface between the dissimilar atomic layers for effecting a thermoelectric transport by exploiting a gradient in the material parameters between the layers. The resulting device defines an inclusion matrix of the dissimilar atomic layers such that the inclusion layer is confined within a matrix formed by the other atomic layer.

Abstract: Embodiments of the innovation relate to, in a modeling apparatus, a method of identifying electromagnetic behavior of an electronic component. The method includes receiving, by the modeling apparatus, geometric design criteria and material property criteria for the component; defining, by the modeling apparatus, a set of finite elements representing the component based upon the geometric design criteria and material property criteria; applying, by the modeling apparatus, a Hermite finite element method function to each finite element to define an electromagnetic field for each finite element; applying, by the modeling apparatus, a divergence-free condition at each node of each finite element to define an electromagnetic field at each node; and based upon application of the Hermite finite element method function and the divergence free condition to generate the electromagnetic fields, generating, by the modeling apparatus, a model of the electromagnetic behavior of the component.

Abstract: This invention relates to a method and system for finite element modeling of enhanced magnetoresistance in thin film semiconductors containing at least one metallic inclusion therein. The method and system utilizes finite element analysis techniques as a function of the applied magnetic field and the geometry of the device for comparing the device characteristics with predetermined qualities and modifying the device to achieve a correlation between the device characteristics and the predetermined qualities.

Abstract: This invention relates to a method and system for finite element modeling of enhanced magnetoresistance in thin film semiconductors containing at least one metallic inclusion therein. The method and system utilizes finite element analysis techniques as a function of the applied magnetic field and the geometry of the device for comparing the device characteristics with predetermined qualities and modifying the device to achieve a correlation between the device characteristics and the predetermined qualities.