Patents by Inventor Lalapet Rangan Vasudevan

Lalapet Rangan Vasudevan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Devices, systems and methods for manufacturing through-substrate vias and front-side structures
    Patent number: 9627295
    Abstract: Methods of manufacturing semiconductor devices and semiconductor devices with through-substrate vias (TSVs). One embodiment of a method of manufacturing a semiconductor device includes forming an opening through a dielectric structure and at least a portion of a semiconductor substrate, and forming a dielectric liner material having a first portion lining the opening and a second portion on an outer surface of the dielectric structure laterally outside of the opening. The method further includes removing the conductive material such that the second portion of the dielectric liner material is exposed, and forming a damascene conductive line in the second portion of the dielectric liner material that is electrically coupled to the TSV.
    Type: Grant
    Filed: March 2, 2016
    Date of Patent: April 18, 2017
    Assignee: Micron Technology, Inc.
    Inventors: Anurag Jindal, Jian He, Lalapet Rangan Vasudevan, Kyle K. Kirby, Hongqi Li
  • DEVICES, SYSTEMS AND METHODS FOR MANUFACTURING THROUGH-SUBSTRATE VIAS AND FRONT-SIDE STRUCTURES
    Publication number: 20160190042
    Abstract: Methods of manufacturing semiconductor devices and semiconductor devices with through-substrate vias (TSVs). One embodiment of a method of manufacturing a semiconductor device includes forming an opening through a dielectric structure and at least a portion of a semiconductor substrate, and forming a dielectric liner material having a first portion lining the opening and a second portion on an outer surface of the dielectric structure laterally outside of the opening. The method further includes removing the conductive material such that the second portion of the dielectric liner material is exposed, and forming a damascene conductive line in the second portion of the dielectric liner material that is electrically coupled to the TSV.
    Type: Application
    Filed: March 2, 2016
    Publication date: June 30, 2016
    Inventors: Anurag Jindal, Jian He, Lalapet Rangan Vasudevan, Kyle K. Kirby, Hongqi Li
  • Devices, systems and methods for manufacturing through-substrate vias and front-side structures
    Patent number: 9305865
    Abstract: Methods of manufacturing semiconductor devices and semiconductor devices with through-substrate vias (TSVs). One embodiment of a method of manufacturing a semiconductor device includes forming an opening through a dielectric structure and at least a portion of a semiconductor substrate, and forming a dielectric liner material having a first portion lining the opening and a second portion on an outer surface of the dielectric structure laterally outside of the opening. The method further includes removing the conductive material such that the second portion of the dielectric liner material is exposed, and forming a damascene conductive line in the second portion of the dielectric liner material that is electrically coupled to the TSV.
    Type: Grant
    Filed: October 31, 2013
    Date of Patent: April 5, 2016
    Assignee: Micron Technology, Inc.
    Inventors: Anurag Jindal, Jian He, Lalapet Rangan Vasudevan, Kyle K. Kirby, Hongqi Li
  • DEVICES, SYSTEMS AND METHODS FOR MANUFACTURING THROUGH-SUBSTRATE VIAS AND FRONT-SIDE STRUCTURES
    Publication number: 20150115445
    Abstract: Methods of manufacturing semiconductor devices and semiconductor devices with through-substrate vias (TSVs). One embodiment of a method of manufacturing a semiconductor device includes forming an opening through a dielectric structure and at least a portion of a semiconductor substrate, and forming a dielectric liner material having a first portion lining the opening and a second portion on an outer surface of the dielectric structure laterally outside of the opening. The method further includes removing the conductive material such that the second portion of the dielectric liner material is exposed, and forming a damascene conductive line in the second portion of the dielectric liner material that is electrically coupled to the TSV.
    Type: Application
    Filed: October 31, 2013
    Publication date: April 30, 2015
    Applicant: Micron Technology, Inc.
    Inventors: Anurag Jindal, Jian He, Lalapet Rangan Vasudevan, Kyle K. Kirby, Hongqi Li