Abstract: A single-mode optical device, including a first region, and a second region laterally disposed about the first region, and including an absorbing layer and an isolation layer between the absorbing layer and the first region, wherein the thickness of the isolation layer is selected to control optical loss from the first region to the absorbing layer in the second region and thereby to attenuate one or more high order lateral optical modes of the device. The one or more high order lateral optical modes are attenuated relative to the fundamental lateral mode to provide the device with a high kink power. The device can be a 980 nm ridge diode laser where the thickness of an oxide insulating layer around the ridge is selected to control optical losses into a gold contact layer and thereby attenuate the first order lateral mode, providing the laser with a kink power of at least about 250 mW.

Abstract: A single-mode optical device, including a first region, and a second region laterally disposed about the first region, and including an absorbing layer and an isolation layer between the absorbing layer and the first region, wherein the thickness of the isolation layer is selected to control optical loss from the first region to the absorbing layer in the second region and thereby to attenuate one or more high order lateral optical modes of the device. The one or more high order lateral optical modes are attenuated relative to the fundamental lateral mode to provide the device with a high kink power. The device can be a 980 nm ridge diode laser where the thickness of an oxide insulating layer around the ridge is selected to control optical losses into a gold contact layer and thereby attenuate the first order lateral mode, providing the laser with a kink power of at least about 250 mW.