Abstract: A method for manufacturing a two terminal or three terminal tandem solar cell comprising a silicon-based bottom solar cell and a thin-film top solar cell; the method comprising: providing a silicon substrate with a front surface and a rear surface, carrying out a sequence of steps comprising: creating on the front surface a carrier extracting layer stack comprising at least a carrier extracting layer formed on or in the front surface of the substrate, creating on the rear surface a passivating coating layer comprising deposition of a first AlOx layer, creating sacrificial layer stack comprising a second AlOx layer on the carrier extracting layer stack on the front surface; creating metal-based electrical contacts on the rear surface, including an annealing step; removing the sacrificial layer stack from the carrier extracting layer stack, and creating the thin film top solar cell on the carrier extracting layer stack.

Abstract: Solar cell and method of manufacturing a solar cell. The solar cell has a silicon substrate (2) and a layer (4) disposed on a substrate side (2a) of the silicon substrate (2). It further has a contact structure (6) extending through the layer (4) from a cell side (1a) of the solar cell (1) to the silicon substrate (2). The layer (4) is composed of a polycrystalline silicon layer (8) and a tunnel oxide layer (10) interposed between the polycrystalline silicon layer (8) and the silicon substrate (2).

Abstract: A tandem solar cell includes a top solar cell and a bottom solar cell. The top solar cell and the bottom solar cell each have a respective front surface and a rear surface, with the respective front surfaces being adapted for facing a radiation source during use. The top solar cell is arranged with its rear surface overlying the front surface of the bottom solar cell. The top solar cell includes a photovoltaic absorber layer with a bandgap greater than that of crystalline silicon. The bottom solar cell includes a crystalline silicon substrate. On at least a portion of the front surface of the bottom solar cell a passivating layer stack is disposed which includes a thin dielectric film and a secondary layer of either selective carrier extracting material or polysilicon. The thin dielectric film is arranged between the silicon substrate and the secondary layer.

Abstract: A semiconductor substrate (1) having an active region (2) and a first surface and a second surface facing each other. A first type of passivating layer (5) is present for providing an electrical contact of a first conductivity type on a part of the first surface of the semiconductor substrate (1). A dielectric layer (4) is provided between the first type of passivating layer (5) and an active region (2) of the semiconductor substrate (1). Doping of the first conductivity type is provided in a layer (3) of the active region (2) of the semiconductor substrate (1) near the first surface. The lateral dopant level in the layer (3) of the active region (2) near the first surface is substantially uniform.

Abstract: The present invention relates to a dopant enhanced silicon based solar cell and method of manufacturing thereof. The solar cell includes on a surface of the silicon substrate a layer stack including a thin oxide layer and a polysilicon layer, the thin oxide layer being arranged as a tunnel oxide layer in-between the surface of the substrate and the polysilicon layer. The solar cell is provided with fire-through metal contacts arranged on the layer stack locally penetrating into the polysilicon layer. The silicon substrate is provided at the side of the surface with a dopant species that creates a dopant profile of a first conductivity type in the silicon substrate. The dopant profile in the silicon substrate has a maximal dopant level between about 1×10+18 and about 3×10+19 atoms/cm3 and a depth of at least 200 nm within the substrate to a dopant atom level of 1×10+17 atoms/cm3.

Abstract: A semiconductor substrate (1) having an active region (2) and a first surface and a second surface facing each other. A first type of passivating layer (5) is present for providing an electrical contact of a first conductivity type on a part of the first surface of the semiconductor substrate (1). A dielectric layer (4) is provided between the first type of passivating layer (5) and an active region (2) of the semiconductor substrate (1). Doping of the first conductivity type is provided in a layer (3) of the active region (2) of the semiconductor substrate (1) near the first surface. The lateral dopant level in the layer (3) of the active region (2) near the first surface is substantially uniform.

Abstract: A method for manufacturing a photovoltaic cell from a substrate (2) having a front side (4), a back side (6) and an edge (8). A carrier selective contact structure (4a) of a first type is provided on at least a part of the front side (4). A stack (10) having a thin oxide layer covered by a polysilicon layer is applied, wherein the stack (10) is applied to the back side (6) and the front side (4) of the substrate (2), and possibly also on edge (8). The stack (10) of thin oxide layer and polysilicon layer on the front side (4) is then removed.

Abstract: Solar cell and method of manufacturing a solar cell. The solar cell has a silicon substrate (2) and a layer (4) disposed on a substrate side (2a) of the silicon substrate (2). It further has a contact structure (6) extending through the layer (4) from a cell side (1a) of the solar cell (1) to the silicon substrate (2). The layer (4) is composed of a polycrystalline silicon layer (8) and a tunnel oxide layer (10) interposed between the polycrystalline silicon layer (8) and the silicon substrate (2).

Abstract: A method for manufacturing a front floating emitter type solar cell includes providing a silicon substrate of a first or second conductivity type with a front surface and a rear surface; creating a tunneling oxide layer on the rear surface of the silicon substrate; depositing a polysilicon layer on at least the rear surface; creating a doped area of the first conductivity type in an area part of the polysilicon layer on the rear surface; forming in or on the front surface a doped layer of the second conductivity type opposite to the first conductivity type. In the area part of the polysilicon layer on the rear surface, a concentration of the impurity of the first conductivity type is larger than a concentration of the impurity of the second conductivity type, and the area part of the polysilicon layer on the rear surface has conductivity of the first conductivity type.

Abstract: A tandem solar cell includes a top solar cell and a bottom solar cell. The top solar cell and the bottom solar cell each have a respective front surface and a rear surface, with the respective front surfaces being adapted for facing a radiation source during use. The top solar cell is arranged with its rear surface overlying the front surface of the bottom solar cell. The top solar cell includes a photovoltaic absorber layer with a bandgap greater than that of crystalline silicon. The bottom solar cell includes a crystalline silicon substrate. On at least a portion of the front surface of the bottom solar cell a passivating layer stack is disposed which includes a thin dielectric film and a secondary layer of either selective carrier extracting material or polysilicon. The thin dielectric film is arranged between the silicon substrate and the secondary layer.

Abstract: Known photovoltaic cells with wrap through connections have output terminals of both polarities on its back surface, one of which is coupled to the front surface via the wrap through connections. The invented solar cell is manufactured by creating an emitter layer on the back surface. Electrode material is applied in mutually separate first and second areas on the back surface. The electrode material in the first area contacts the emitter. The second area covers a surrounding of a hole that provides for the connection on the back surface. The electrode material in the second area lies on the emitter and around the second area the emitter is interrupted by a trench. On the front surface a further area of electrode material is applied over the hole. If necessary the electrode material in the second area on the back surface is applied on a supporting surface that is substantially electrically isolated from current flowing laterally through the emitter layer underneath the first area.

Abstract: A solar cell including a semiconductor substrate, having a front side surface for receiving radiation and back-side surface providing a first junction structure in a first area substrate portion and with a second junction structure in a second area substrate portion. The second area portion borders the first area portion. The first junction structure includes a first conductivity type semiconductor layer covering the first area portion. The second junction structure includes a second conductivity type semiconductor layer covering the second area portion. The second junction structure, second conductivity type semiconductor layer partially overlaps the first junction structure, first conductivity type semiconductor layer, with the overlapping second conductivity type semiconductor layer portion being above a first conductivity type semiconductor layer portion while separated by a first dielectric layer.

Abstract: Known photovoltaic cells with wrap through connections have output terminals of both polarities on its back surface, one of which is coupled to the front surface via the wrap through connections. The invented solar cell is manufactured by creating an emitter layer on the back surface. Electrode material is applied in mutually separate first and second areas on the back surface. The electrode material in the first area contacts the emitter. The second area covers a surrounding of a hole that provides for the connection on the back surface. The electrode material in the second area lies on the emitter and around the second area the emitter is interrupted by a trench. On the front surface a further area of electrode material is applied over the hole. If necessary the electrode material in the second area on the back surface is applied on a supporting surface that is substantially electrically isolated from current flowing laterally through the emitter layer underneath the first area.

Abstract: A fire through conductor paste is applied as a plurality of mutually separate islands on a dielectric layer on a semi-conductor body of a photo-voltaic cell. A connecting structure of a further conductor paste is applied connecting the islands, at least on the dielectric layer between locations of the islands, so that the islands are connected by the connecting structure. Different compositions are used for the fire through conductor paste and the further conductor paste, which behave differently during firing. The fire through conductor paste and the further conductor paste are fired under process conditions wherein the fire through conductor paste fires through the dielectric layer and the further conductor paste does not fire through the dielectric layer. In this way the fire through metal paste establishes electric contact through the dielectric layer between the semi-conductor body and a structure formed from the further conductor paste.

Abstract: The present invention provides a method of manufacturing a crystalline silicon solar cell, comprising: —providing a crystalline silicon substrate having a front side and a back side; —forming a thin silicon oxide film on at least one of the front and the back side by soaking the crystalline silicon substrate in a chemical solution; —forming a dielectric coating film on the thin silicon oxide film on at least one of the front and the back side. The thin silicon oxide film may be formed with a thickness of 0.5-10 nm. By forming a oxide layer using a chemical solution, it is possible to form a thin oxide film for surface passivation wherein the relatively low temperature avoids deterioration of the semiconductor layers.

Abstract: A method for manufacturing a solar cell from a semiconductor substrate (1) of a first conductivity type, the semiconductor substrate having a front surface (2) and a back surface (3). The method includes in a sequence: texturing (102) the front surface to create a textured front surface (2a); creating (103) by diffusion of a dopant of the first conductivity type a first conductivity-type doped layer (2c) in the textured front surface and a back surface field layer (4) of the first conductivity type in the back surface; removing (105; 104a) the first conductivity-type doped layer from the textured front surface by an etching process adapted for retaining texture of the textured front surface; creating (106) a layer of a second conductivity type (6) on the textured front surface by diffusion of a dopant of the second conductivity type into the textured front surface.

Abstract: A method for manufacturing a solar ceil from a silicon semiconductor substrate of a first conductivity type, the substrate having a front and a rear surface; and creating on the rear surface a doped layer of the first conductivity type, as rear surface doped layer as back surface field in the solar cell; creating on the front surface a doped, layer of a second conductivity type as front surface doped layer as an emitter layer in the solar cell, the second conductivity type being opposite to the first conductivity type; wherein the method further includes: creating recesses in the rear surface to pattern the rear surface doped layer of the first conductivity type so as to create back surface field areas, the recesses being void of rear surface doped layer material, and creating via holes in the substrate, each via hole being positioned within an associated recess.

Abstract: A solar cell includes a silicon semiconductor substrate of a first conductivity type. The substrate has a front surface and a rear surface, of which the front surface is arranged for capturing radiation energy. The rear surface includes a plurality of first electric contacts and a plurality of second electric contacts. The first and second electric contacts are arranged in alternation adjacent to each other. Each first electric contact is a heterostructure of a first type as contact for minority charge carriers, and the front surface of the silicon semiconductor substrate includes a highly doped silicon front surface field layer. The conductivity of the front surface field layer is the first conductivity type.

Abstract: A method for manufacturing a solar cell includes providing a first conductivity type doped crystalline silicon wafer, depositing on one side a first intrinsic a-Si:H buffer layer, followed by a second conductivity type doped a-Si:H layer, turning over the wafer and depositing on the opposite side a surface passivating anti-reflection coating, applying a first mask having a grid opening on the second conductivity type doped a-Si:H covered surface of the wafer, dry etching to remove the second conductivity type doped a-Si:H layer not covered by the first mask, while maintaining the first mask in position: depositing a second intrinsic buffer layer of a-Si:H, depositing a first conductivity type doped a-Si:H layer.

Abstract: A method for manufacturing a solar cell from a semiconductor substrate (1) of a first conductivity type, the semiconductor substrate having a front surface (2) and a back surface (3). The method includes in a sequence: texturing (102) the front surface to create a textured front surface (2a); creating (103) by diffusion of a dopant of the first conductivity type a first conductivity-type doped layer (2c) in the textured front surface and a back surface field layer (4) of the first conductivity type in the back surface; removing (105; 104a) the first conductivity-type doped layer from the textured front surface by an etching process adapted for retaining texture of the textured front surface; creating (106) a layer of a second conductivity type (6) on the textured front surface by diffusion of a dopant of the second conductivity type into the textured front surface.