Abstract: A semiconductor device has a pn junction for producing electromagnetic radation in an active region and a monocrystalline semiconductor body having a first region of a first conductivity type and a second region of the second opposite conductivity type, which forms with each other the pn junction. On the second region is disposed a blocking layer of the first conductivity type, which has an interruption at the area of the active region, while on the blocking layer is disposed a highly doped contact layer of the second conductivity type, which adjoins a surface and in which a contact region is located at the area of said interruption, which also adjoins the surface and extends into the second region. The first region on the one hand and the contact region and the contact layer on the other hand are each provided with an electrode.

Abstract: A method of manufacturing a semiconductor device is provided in which a masking layer is formed on a part of a surface of a monocrystalline semiconductor body and the semiconductor body is then subjected at the side of the surface to an epitaxial treatment from a gaseous phase, and an epitaxial layer is deposited of which a portion on the uncovered part of the surface is monocrystalline and a portion on the masking layer is polycrystalline. This method is characterized in that, prior to the epitaxial treatment, an amorphous or polycrystalline layer is deposited both on the masking layer and on the uncovered part of the surface at a temperature which is lower than that at which the epitaxial layer is deposited. In this layer the layer portion on the uncovered surface part changes into the monocrystalline state by a thermal treatment preceding the deposition of the epitaxial layer.