Abstract: The invention relates to a method for manufacturing a semiconductor-on-insulator structure (10), comprising the following steps: —providing an FD-SOI substrate (1) comprising, successively from its base to its top: a monocrystalline substrate (2) having an electrical resistivity of between 500 ?·cm and 30 k?·cm, an interstitial oxygen content (Oi) of between 20 and 40 old ppma, and having an N- or P-type doping, an electrically insulating layer (3) having a thickness of between 20 nm and 400 nm, a monocrystalline layer (4) having a P-type doping, —heat-treating the FD-SOI substrate (1) at a temperature greater than or equal to 1175° C. for a time greater than or equal to 1 hour in order to form a P-N junction (5) in the substrate. The invention also relates to such a semiconductor-on-insulator structure.

Abstract: A method for forming reliefs on a face of a substrate is provided, successively including forming a protective screen for protecting at least a first zone of the face; an implanting to introduce at least one species comprising carbon into the substrate from the face of the substrate, the forming of the protective screen and the implanting being configured to form, in the substrate, at least one carbon modified layer having a concentration of implanted carbon greater than or equal to an etching threshold only from a second zone of the face of the substrate not protected by the protective screen; removing the protective screen; and etching the substrate from the first zone selectively with respect to the second zone.

Abstract: A method for producing at least one pattern in a substrate is provided, including providing a substrate having a front face surmounted by at least one masking layer carrying at least one mask pattern, carrying out an ion implantation of the substrate so as to form at least one first zone having a resistivity ?1 less than a resistivity ?2 of at least one second non-modified zone, after the ion implantation step, immersing the substrate in an electrolyte, and removing the at least one first zone selectively at the at least one second zone, the removing including at least an application of an electrochemistry step to the substrate to cause a porosification of the at least one first zone selectively at the at least one second zone.

Abstract: A method for forming reliefs on a face of a substrate is provided, successively including forming a protective screen for protecting at least a first zone of the face; an implanting to introduce at least one species comprising carbon into the substrate from the face of the substrate, the forming of the protective screen and the implanting being configured to form, in the substrate, at least one carbon modified layer having a concentration of implanted carbon greater than or equal to an etching threshold only from a second zone of the face of the substrate not protected by the protective screen; removing the protective screen; and etching the substrate from the first zone selectively with respect to the second zone.

Abstract: A method for forming reliefs on a face of a substrate is provided, successively including forming a protective screen for protecting at least a first zone of the face; an implanting to introduce at least one species comprising carbon into the substrate from the face of the substrate, the forming of the protective screen and the implanting being configured to form, in the substrate, at least one carbon modified layer having a concentration of implanted carbon greater than or equal to an etching threshold only from a second zone of the face of the substrate not protected by the protective screen; removing the protective screen; and etching the substrate from the first zone selectively with respect to the second zone.

Abstract: A method for producing at least one pattern in a substrate is provided, including providing a substrate having a front face surmounted by at least one masking layer carrying at least one mask pattern, carrying out an ion implantation of the substrate so as to form at least one first zone having a resistivity ?1 less than a resistivity ?2 of at least one second non-modified zone, after the ion implantation step, immersing the substrate in an electrolyte, and removing the at least one first zone selectively at the at least one second zone, the removing including at least an application of an electrochemistry step to the substrate to cause a porosification of the at least one first zone selectively at the at least one second zone.

Abstract: The invention relates in particular to a method for producing subsequent patterns in an underlying layer (120), the method comprising at least one step of producing prior patterns in a carbon imprintable layer (110) on top of the underlying layer (120), the production of the prior patterns involving nanoimprinting of the imprintable layer (110) and leave in place a continuous layer formed by the imprintable layer (110) and covering the underlying layer (120), characterized in that it comprises the following step: at least one step of modifying the underlying layer (120) via ion implantation (421) in the underlying layer (120), the implantation (421) being carried out through the imprintable layer (110) comprising the subsequent patterns, the parameters of the implantation (421) being chosen in such a way as to form, in the underlying layer (120), implanted zones (122) and non-implanted zones, the non-implanted zones defining the subsequent patterns and having a geometry that is dependent on the prior patterns

Abstract: The invention relates in particular to a method for creating patterns in a layer (410) to be etched, starting from a stack comprising at least the layer (410) to be etched and a masking, layer (420) on top of the layer (410) to be etched, the masking layer (420) having at least one pattern (421), the method comprising at least: a) a step of modifying at least one zone (411) of the layer (410) to be etched via ion implantation (430) vertically in line with said at least one pattern (421); b) at least one sequence of steps comprising: b1) a step of enlarging (440) the at least one pattern (421) in a plane in which the layer (410) to be etched mainly extends; b2) a step of modifying at least one zone (411?, 411?) of the layer (410) to be etched via ion implantation (430) vertically in line with the at least one enlarged pattern (421), the implantation being carried out over a depth less than the implantation depth of the preceding, modification step; c) a step of removing (461, 462) the modified zones (411

Abstract: A method for producing patterns in a layer to be etched, from a stack including at least the layer to be etched and a masking layer overlying the layer to be etched, with the masking layer having at least one pattern. The method includes modifying a first area of the layer to be etched by ion implantation through the masking layer; depositing a buffer layer to cover the pattern of the masking layer; modifying another area of the layer to be etched, different from the first area, by ion implantation through the buffer layer, to a depth of the layer to be etched greater than the implantation depth of the preceding step of modifying; removing the buffer layer; removing the masking layer; removing the modified areas by etching them selectively to the non-modified areas of the layer to be etched.

Abstract: A method for forming reliefs on a face of a substrate is provided, successively including forming a protective screen for protecting at least a first zone of the face; an implanting to introduce at least one species comprising carbon into the substrate from the face of the substrate, the forming of the protective screen and the implanting being configured to form, in the substrate, at least one carbon modified layer having a concentration of implanted carbon greater than or equal to an etching threshold only from a second zone of the face of the substrate not protected by the protective screen; removing the protective screen; and etching the substrate from the first zone selectively with respect to the second zone.

Abstract: A method for forming reliefs on the surface of a substrate, including a first implantation of ions in the substrate according to a first direction; a second implantation of ions in the substrate according to a second direction that is different from the first direction; at least one of the first and second implantations is carried out through at least one mask having at least one pattern; an etching of areas of the substrate having received by implantation a dose greater than or equal to a threshold, selectively to the areas of the substrate that have not received via implantation a dose greater than said threshold; the parameters of the first and second implantations being adjusted in such a way that only areas of the substrate that have been implanted both during the first implantation and during the second implantation receive a dose greater than or equal to said threshold.

Abstract: The invention relates in particular to a method for producing subsequent patterns in an underlying layer (120), the method comprising at least one step of producing prior patterns in a carbon imprintable layer (110) on top of the underlying layer (120), the production of the prior patterns involving nanoimprinting of the imprintable layer (110) and leave in place a continuous layer formed by the imprintable layer (110) and covering the underlying layer (120), characterized in that it comprises the following step: at least one step of modifying the underlying layer (120) via ion implantation (421) in the underlying layer (120), the implantation (421) being carried out through the imprintable layer (110) comprising the subsequent patterns, the parameters of the implantation (421) being chosen in such a way as to form, in the underlying layer (120), implanted zones (122) and non-implanted zones, the non-Implanted zones defining the subsequent patterns and having a geometry that is dependent on the prior pattern

Abstract: The invention relates in particular to a method for creating patterns in a layer (410) to be etched, starting from a stack comprising at least the layer (410) to be etched and a masking, layer (420) on top of the layer (410) to be etched, the masking layer (420) having at least one pattern (421), the method comprising at least; a) a step of modifying at least one zone (411) of the layer (410) to be etched via ion implantation (430) vertically in line with said at least one pattern (421); b) at least one sequence of steps comprising: b1) a step of enlarging (440) the at least one pattern (421) in a plane in which the layer (410) to be etched mainly extends; b2) a step of modifying at least one zone (411?, 411?) of the layer (410) to be etched via ion implantation (430) vertically in line with the at least one enlarged pattern (421), the implantation being carried out over a depth less than the implantation depth of the preceding, modification step;) c) a step of removing (461, 462) the modified zones (41

Abstract: The invention relates in particular to a method for producing subsequent patterns in an underlying layer (120), the method comprising at least one step of producing prior patterns in a carbon imprintable layer (110) on top of the underlying layer (120), the production of the prior patterns involving nanoimprinting of the imprintable layer (110) and leave in place a continuous layer formed by the imprintable layer (110) and covering the underlying layer (120), characterized in that it comprises the following step: at least one step of modifying the underlying layer (120) via ion implantation (421) in the underlying layer (120), the implantation (421) being carried out through the imprintable layer (110) comprising the subsequent patterns, the parameters of the implantation (421) being chosen in such a way as to form, in the underlying layer (120), implanted zones (122) and non-implanted zones, the non-Implanted zones defining the subsequent patterns and having a geometry that is dependent on the prior pattern

Abstract: The invention relates in particular to a method for producing subsequent patterns in an underlying layer (120), the method comprising at least one step of producing prior patterns in a carbon imprintable layer (110) on top of the underlying layer (120), the production of the prior patterns involving nanoimprinting of the imprintable layer (110) and leave in place a continuous layer formed by the imprintable layer (110) and covering the underlying layer (120), characterized in that it comprises the following step: at least one step of modifying the underlying layer (120) via ion implantation (421) in the underlying layer (120), the implantation (421) being carried out through the imprintable layer (110) comprising the subsequent patterns, the parameters of the implantation (421) being chosen in such a way as to form, in the underlying layer (120), implanted zones (122) and non-implanted zones, the non-implanted zones defining the subsequent patterns and having a geometry that is dependent on the prior patte

Abstract: A method for forming reliefs on the surface of a substrate, including a first implantation of ions in the substrate according to a first direction; a second implantation of ions in the substrate according to a second direction that is different from the first direction; at least one of the first and second implantations is carried out through at least one mask having at least one pattern; an etching of areas of the substrate having received by implantation a dose greater than or equal to a threshold, selectively to the areas of the substrate that have not received via implantation a dose greater than said threshold; the parameters of the first and second implantations being adjusted in such a way that only areas of the substrate that have been implanted both during the first implantation and during the second implantation receive a dose greater than or equal to said threshold.

Abstract: A method for producing patterns in a layer to be etched, from a stack including at least the layer to be etched and a masking layer overlying the layer to be etched, with the masking layer having at least one pattern. The method includes modifying a first area of the layer to be etched by ion implantation through the masking layer; depositing a buffer layer to cover the pattern of the masking layer; modifying another area of the layer to be etched, different from the first area, by ion implantation through the buffer layer, to a depth of the layer to be etched greater than the implantation depth of the preceding step of modifying; removing the buffer layer; removing the masking layer; removing the modified areas by etching them selectively to the non-modified areas of the layer to be etched.