Abstract: A method, article of manufacture, and apparatus for processing information are disclosed. In some embodiments, this includes mapping a target multi-controller system, determining a target controller to send a data chunk to based on the mapping, determining if the target controller is missing any portion of the data chunk, and sending the missing portions of the data chunk to the target controller. In some embodiments, sending the missing portions of the data chunk to the target controller includes sending the missing portions of the data chunk from a source multi-controller system to the target. The source multi-controller system may have a first number of controllers and the target multi-controller system may have a second number of controllers.

Abstract: An electronic device including a core, at least a wire and a magnetic material is provided. The core includes a pillar, a top board and a bottom board. The pillar is disposed between the top board and the bottom board. An area of the top board is smaller than an area of the bottom board. A winding space is fanned among the top board, the bottom board and the pillar. The wire is winded around the pillar and located in the winding space. The magnetic material fills the winding space to encapsulate the wire. The magnetic material includes a resin and a metallic powder, wherein an average particle diameter of the magnetic powder is smaller than 20 ?m.

Abstract: A choke includes a single-piece core entirely made of a same material, the single-piece core having two boards and a pillar located between the two boards, a winding space being located among the two boards and the pillar, wherein the pillar has a non-circular and non-rectangular cross section along a direction substantially perpendicular to an axial direction of the pillar, the cross section of the pillar has a first axis and a second axis intersecting with each other at a center of the cross section of the pillar and are substantially perpendicular with each other, the first axis is longer than the second axis, and the cross section of the pillar is substantially symmetrical to both of the first axis and the second axis.

Abstract: A choke including a core and a hollow coil is provided. The core includes a first core body and a second core body. The first core body includes a pillar. The second core body is a flat plate and has an opening. An end of the pillar is suitable to be disposed in the opening and joined to the same. The hollow coil is fitted on the pillar.

Abstract: An electronic device including a core, at least a wire and a magnetic material is provided. The core includes a pillar, a top board and a bottom board. The pillar is disposed between the top board and the bottom board. An area of the top board is smaller than an area of the bottom board. A winding space is fanned among the top board, the bottom board and the pillar. The wire is winded around the pillar and located in the winding space. The magnetic material fills the winding space to encapsulate the wire. The magnetic material includes a resin and a metallic powder, wherein an average particle diameter of the magnetic powder is smaller than 20 ?m.

Abstract: A choke coil including a drum-core and at least one wire is provided. The drum-core includes a pillar, a first board and a second board. Two ends of the pillar are respectively connected to the first board and the second board. A material of the drum-core includes ferrous alloy. The wire has a winding portion wrapped around the pillar.

Abstract: A method for adjusting the inductance of a choke is provided by the present invention. The method includes with an unchanged structure and unchanged dimensions of the core of the choke, changing the kind of the magnetic materials composing the cores so as to adjust the magnetic permeability of the magnetic material. In addition, the present invention also provides a method for designing a choke, the method includes determining the structure of a first choke and a second choke, determining the dimensions of the cores of the chokes, and selecting magnetic materials composing the cores.

Abstract: In one embodiment, a choke coil has a magnetic core, a coil, and magnetic material. The core has a first permeability which is from about 350 to 1200. The coil is wrapped around the core. The magnetic material surrounds the coil and has a second permeability. The first permeability is higher than the second permeability. The second permeability is from about 5 to 30.

Abstract: In one embodiment, a choke coil has a magnetic core, a coil, and magnetic material. The core has a first permeability which is from about 350 to 1200. The coil is wrapped around the core. The magnetic material surrounds the coil and has a second permeability. The first permeability is higher than the second permeability. The second permeability is from about 5 to 30.

Abstract: A magneto-resistance transistor including a magneto-resistant element which may function as an emitter and a passive element which may function as a collector. The base may be interposed between the passive element and the magneto-resistant element, thereby coupling the passive element with the magneto-resistant element. A magnetic field of a given strength may be applied to at least a portion of the magneto-resistant transistor, the given strength determining a resistance in the at least a portion of the magneto-resistant transistor. Thus, by adjusting the given strength of the magnetic field, the resistance may be adjusted. Therefore, different emitter current inputs may be achieved with a fixed voltage. Further, a base current may vary with a controlled variation of the emitter current input.

Abstract: A spin transistor and a manufacturing method thereof are provided. The method includes defining a required area on a substrate by lithography; forming a doping area by ion-implantation, and forming a magnetoresistive film on the substrate. Finally, the method produces a spin transistor with the emitter, the base, and the collector in the same plane surface. The manufacturing method integrates the emitter, the base, and the collector into one plane, so that miniaturization of the spin transistor is achieved, and it is advantageous for the integration and subsequent packaging of the spin transistor and integrated circuit elements.

Abstract: A magneto-resistance transistor including a magneto-resistant element which may function as an emitter and a passive element which may function as a collector. The base may be interposed between the passive element and the magneto-resistant element, thereby coupling the passive element with the magneto-resistant element. A magnetic field of a given strength may be applied to at least a portion of the magneto-resistant transistor, the given strength determining a resistance in the at least a portion of the magneto-resistant transistor. Thus, by adjusting the given strength of the magnetic field, the resistance may be adjusted. Therefore, different emitter current inputs may be achieved with a fixed voltage. Further, a base current may vary with a controlled variation of the emitter current input.

Abstract: A magneto-resistance transistor including a magneto-resistant element which may function as an emitter and a passive element which may function as a collector. The base may be interposed between the passive element and the magneto-resistant element, thereby coupling the passive element with the magneto-resistant element. A magnetic field of a given strength may be applied to at least a portion of the magneto-resistant transistor, the given strength determining a resistance in the at least a portion of the magneto-resistant transistor. Thus, by adjusting the given strength of the magnetic field, the resistance may be adjusted. Therefore, different emitter current inputs may be achieved with a fixed voltage. Further, a base current may vary with a controlled variation of the emitter current input.

Abstract: A spin transistor and a manufacturing method thereof are provided. The method includes defining a required area on a substrate by lithography; forming a doping area by ion-implantation, and forming a magnetoresistive film on the substrate. Finally, the method produces a spin transistor with the emitter, the base, and the collector in the same plane surface. The manufacturing method integrates the emitter, the base, and the collector into one plane, so that miniaturization of the spin transistor is achieved, and it is advantageous for the integration and subsequent packaging of the spin transistor and integrated circuit elements.

Abstract: A spin transistor uses a single potential barrier structure to increase a current fluctuation rate. The spin transistor may include at least one of an emitter, a collector, a base and a base resistor. The emitter may be a magneto-resistant device, which may provide an adjustable resistance based on a magnetic field. The collector may be a passive device which may provide the single potential barrier. The base may placed between the emitter and the collector, and may couple the emitter with the collector. The base resistor may be connected to the base in order to provide a bias.

Abstract: A magneto-resistance transistor including a magneto-resistant element which may function as an emitter and a passive element which may function as a collector. The base may be interposed between the passive element and the magneto-resistant element, thereby coupling the passive element with the magneto-resistant element. A magnetic field of a given strength may be applied to at least a portion of the magneto-resistant transistor, the given strength determining a resistance in the at least a portion of the magneto-resistant transistor. Thus, by adjusting the given strength of the magnetic field, the resistance may be adjusted. Therefore, different emitter current inputs may be achieved with a fixed voltage. Further, a base current may vary with a controlled variation of the emitter current input.

Abstract: A spin transistor uses a single potential barrier structure to increase a current fluctuation rate. The spin transistor may include at least one of an emitter, a collector, a base and a base resistor. The emitter may be a magneto-resistant device, which may provide an adjustable resistance based on a magnetic field. The collector may be a passive device which may provide the single potential barrier. The base may placed between the emitter and the collector, and may couple the emitter with the collector. The base resistor may be connected to the base in order to provide a bias.

Abstract: A magneto-resistance transistor including a magneto-resistant element which may function as an emitter and a passive element which may function as a collector. The base may be interposed between the passive element and the magneto-resistant element, thereby coupling the passive element with the magneto-resistant element. A magnetic field of a given strength may be applied to at least a portion of the magneto-resistant transistor, the given strength determining a resistance in the at least a portion of the magneto-resistant transistor. Thus, by adjusting the given strength of the magnetic field, the resistance may be adjusted. Therefore, different emitter current inputs may be achieved with a fixed voltage. Further, a base current may vary with a controlled variation of the emitter current input.