Abstract: Embodiments of interconnect structures of a three-dimensional (3D) memory device and method for forming the interconnect structures are disclosed. In an example, a 3D NAND memory device includes a semiconductor substrate, an alternating layer stack disposed on the semiconductor substrate, and a dielectric structure, which extends vertically through the alternating layer stack, on an isolation region of the substrate. Further, the alternating layer stack abuts a sidewall surface of the dielectric structure and the dielectric structure is formed of a dielectric material. The 3D memory device additionally includes one or more through array contacts that extend vertically through the dielectric structure and the isolation region, and one or more channel structures that extend vertically through the alternating layer stack.

Abstract: Aspects of the disclosure provide a semiconductor device. The semiconductor device includes gate layers and insulating layers that are stacked alternatingly along a first direction perpendicular to a substrate of the semiconductor device in a first region upon the substrate. The gate layers and the insulating layers are stacked of a stair-step form in a second region. The semiconductor device includes a channel structure that is disposed in the first region. The channel structure and the gate layers form a stack of transistors in a series configuration with the gate layers being gates for the transistors. The semiconductor device includes a contact structure disposed in the second region, and a first dummy channel structure disposed in the second region and around the contact structure. The first dummy channel structure is patterned with a first shape that is different from a second shape of the channel structure.

Abstract: Embodiments of three-dimensional (3D) memory devices having through array contacts (TACs) and methods for forming the same are disclosed. In an example, a method for forming a 3D memory device is disclosed. A dielectric stack including a plurality of dielectric/sacrificial layer pairs is formed on a substrate. A channel structure extending vertically through the dielectric stack is formed. A first opening extending vertically through the dielectric stack is formed. A spacer is formed on a sidewall of the first opening. A TAC extending vertically through the dielectric stack is formed by depositing a conductor layer in contact with the spacer in the first opening. A slit extending vertically through the dielectric stack is formed after forming the TAC. A memory stack including a plurality of conductor/dielectric layer pairs is formed on the substrate by replacing, through the slit, the sacrificial layers in the dielectric/sacrificial layer pairs with a plurality of conductor layers.

Abstract: Embodiments of three-dimensional (3D) memory devices having through array contacts (TACs) and methods for forming the same are disclosed. In an example, a method for forming a 3D memory device is disclosed. A dielectric stack including a plurality of dielectric/sacrificial layer pairs is formed on a substrate. A channel structure extending vertically through the dielectric stack is formed. A first opening extending vertically through the dielectric stack is formed. A spacer is formed on a sidewall of the first opening. A TAC extending vertically through the dielectric stack is formed by depositing a conductor layer in contact with the spacer in the first opening. A slit extending vertically through the dielectric stack is formed after forming the TAC. A memory stack including a plurality of conductor/dielectric layer pairs is formed on the substrate by replacing, through the slit, the sacrificial layers in the dielectric/sacrificial layer pairs with a plurality of conductor layers.

Abstract: Embodiments of interconnect structures of a three-dimensional (3D) memory device and method for forming the interconnect structures are disclosed. In an example, a 3D NAND memory device includes a semiconductor substrate, an alternating layer stack disposed on the semiconductor substrate, and a dielectric structure, which extends vertically through the alternating layer stack, on an isolation region of the substrate. Further, the alternating layer stack abuts a sidewall surface of the dielectric structure and the dielectric structure is formed of a dielectric material. The 3D memory device additionally includes one or more through array contacts that extend vertically through the dielectric structure and the isolation region, and one or more channel structures that extend vertically through the alternating layer stack.

Abstract: A welding jig and welding process for planar magnetic components are provided. The welding jig includes a fixed piece and an elastic piece. The fixed piece includes a base and a carrier. The base has an opening, bumps at the bottom of the opening and a pair of operation ends extending from the opening. The carrier is fixed on the base and located in the opening, and has multiple through holes. When the bumps are located respectively in the through holes, an accommodation interval is formed between adjacent pairs of the bumps for the placement of the planar magnetic components. The elastic piece is secured to the fixed piece, and when the planar magnetic components are placed in the accommodation intervals of the fixed piece, the elastic piece covers the planar magnetic components and the planar magnetic components abut against two side edges of the elastic piece.

Abstract: Methods of assessing genomic instability in breast cancer tissue by measuring the expression level of genes CDKN2A, SCYA18, STK15, NXF1, cDNA Dkfzp762M127, p28 KIAA0882, MYB, Human clone 23948, RERG, HNF3A, and ACADSB or a nucleic acid sequence comprising about 90% or greater sequence identity to SEQ ID NO: 21 in breast cancer tissue, an array suitable for use in such methods, and related methods and compositions.

Abstract: A welding jig and welding process for planar magnetic components are provided. The welding jig includes a fixed piece and an elastic piece. The fixed piece includes a base and a carrier. The base has an opening, bumps at the bottom of the opening and a pair of operation ends extending from the opening. The carrier is fixed on the base and located in the opening, and has multiple through holes. When the bumps are located respectively in the through holes, an accommodation interval is formed between adjacent pairs of the bumps for the placement of the planar magnetic components. The elastic piece is secured to the fixed piece, and when the planar magnetic components are placed in the accommodation intervals of the fixed piece, the elastic piece covers the planar magnetic components and the planar magnetic components abut against two side edges of the elastic piece.

Abstract: A first embodiment is a breast cancer prognosticator comprising a detection mechanism consisting a 15-gene signature. In addition there are embodiments comprised of 23-gene signatures and 28-gene signatures. The 28-gene signature may also be used for the prognosis of ovarian cancer. Another embodiment is a method to determine relapse free potential in breast cancer patients comprising collecting a sample from an individual, removing marker-derived polynucleotide from said sample, using a detection mechanism to search for positive matches of said polynucleotides and a 24-gene signature, and developing a quantitative expression profile.

Abstract: A non-small cell lung cancer postoperative survival prognosticator comprising a detection mechanism consisting of 15-gene, 12-gene, and 16-gene signature and methods of use. Also provided are the identification of various subsets from the 25 prognostic signature genes with potential of operative survival prognosticator for non-small cell lung cancer patients in all tumor stage and early stage and potential for chemoresponse with a method of use.

Abstract: A first embodiment is a breast cancer prognosticator comprising a detection mechanism consisting a 15-gene signature. In addition there are embodiments comprised of 23-gene signatures and 28-gene signatures. The 28-gene signature may also be used for the prognosis of ovarian cancer. A second embodiment is a method to determine metastatic potential, relapse potential, or both in breast cancer patients comprising collecting a sample from an individual, removing marker-derived polynucleotide from said sample, using a detection mechanism to search for positive matches of said polynucleotides and either the 15, 23, or 28-gene signatures, and developing a quantitative expression profile. Utilizing risk analysis the individual can be placed into one of two or more groups predicting risk and/or clincopathogic variables.

Abstract: A first embodiment is a breast cancer prognosticator comprising a detection mechanism consisting a 15-gene signature. In addition there are embodiments comprised of 23-gene signatures and 28-gene signatures. The 28-gene signature may also be used for the prognosis of ovarian cancer. A second embodiment is a method to determine metastatic potential, relapse potential, or both in breast cancer patients comprising collecting a sample from an individual, removing marker-derived polynucleotide from said sample, using a detection mechanism to search for positive matches of said polynucleotides and either the 15, 23, or 28-gene signatures, and developing a quantitative expression profile. Utilizing risk analysis the individual can be placed into one of two or more groups predicting risk and/or clincopathogic variables.

Abstract: Methods of assessing genomic instability in breast cancer tissue by measuring the expression level of genes CDKN2A, SCYA18, STK15, NXF1, cDNA Dkfzp762M127, p28 KIAA0882, MYB, Human clone 23948, RERG, HNF3A, and ACADSB or a nucleic acid sequence comprising about 90% or greater sequence identity to SEQ ID NO: 21 in breast cancer tissue, an array suitable for use in such methods, and related methods and compositions.

Abstract: A first embodiment is a breast cancer prognosticator comprising a detection mechanism consisting a 15-gene signature. In addition there are embodiments comprised of 23-gene signatures and 28-gene signatures. The 28-gene signature may also be used for the prognosis of ovarian cancer. A second embodiment is a method to determine metastatic potential, relapse potential, or both in breast cancer patients comprising collecting a sample from an individual, removing marker-derived polynucleotide from said sample, using a detection mechanism to search for positive matches of said polynucleotides and either the 15, 23, or 28-gene signatures, and developing a quantitative expression profile. Utilizing risk analysis the individual can be placed into one of two or more groups predicting risk and/or clincopathogic variables.

Abstract: A first embodiment is a non-small cell lung cancer recurrence prognosticator comprising a detection mechanism consisting a 35-gene signature. A second embodiment is a non-small cell lung cancer tumor stage prognosticator comprising a detection mechanism consisting an 11-gene signature. A third embodiment is a non-small cell lung cancer differentiation prognosticator comprising a detection mechanism consisting an 18-gene signature.