Abstract: A method for automatically recommending items in a software application. Embodiments include retrieving attributes of a user of the software application and retrieving a machine learning model that has been trained through a supervised learning process based on labeled training data indicating whether users represented by user features historically selected, within the software application, first items of a first item type and second items of a second item type. In certain embodiments, the machine learning model is configured, as a result of the supervised learning process, to recognize latent relationships between the first items of the first item type and the second items of the second item type based on distances between embeddings. Embodiments include providing inputs to the machine learning model based on the attributes of the user and receiving, in response, indications of one or more recommended items of the first item type or the second item type.

Abstract: A method including applying a large language model to a query to generate a query vector. The query vector has a query data structure storing a semantic meaning of the query. The method also includes applying a semantic matching algorithm to both the query vector and a lookup vector. The lookup vector has a lookup data structure storing semantic meanings of entries of a lookup table. The semantic matching algorithm compares the query vector to the lookup vector and returns, as a result of comparing, a found entry in the lookup table. The method also includes looking up, using the found entry in the lookup table, a target entry in the lookup table. The method also includes returning the target entry.

Abstract: An electron beam emitter apparatus includes a light source and a radio frequency (“RF”) source. In another aspect, an apparatus includes direct density modulation of photo-assisted field emission from a radio frequency cold cathode. A further aspect provides a radio frequency source connected to an electron emitter or cold cathode having tapered projections, and a photon emitter such as a laser, infrared light or ultraviolet light.

Abstract: A method for automatically recommending to a user of a software application one or more categories of a plurality of different categories of tax deductible expenses includes providing input data to a trained machine learning model and receiving output from the trained machine learning model based on the input data. The output includes a recommendation for the user that includes (i) one or more categories of the plurality of different categories of tax deductible expenses; and (ii) a plurality of examples of tax deductible expenses for each of the one or more categories. The method includes receiving feedback from the user on the recommendation and generating updated training data for the trained machine learning model based on the feedback.

Abstract: A semiconductor structure and a method for fabricating the semiconductor structure are provided. The method includes forming an epitaxial layer in a substrate. The epitaxial layer includes a first region having a first crystal plane and a second region having a second crystal plane, and indices of lattice planes of the first crystal plane and the second crystal plane are different. The method also includes forming a capping structure including one or more capping layers on the first region and the second region. Forming the capping layer includes forming an initial capping layer having different thicknesses on the first region and the second region; and etching the initial capping layer to reduce a thickness difference between the initial capping layer on the first region and the initial capping layer on the second region. Further, the method includes forming an electrode electrically connected to the capping structure.

Abstract: A method is provided for fabricating a semiconductor structure. The method includes providing a substrate including a first region for forming a first transistor and a second region for forming a second transistor. The method also includes forming a first stress layer in the substrate in the first region and a second stress layer in the substrate in the second region, wherein top surfaces of the first stress layer and the second stress layer are above a surface of the substrate. Further, the method includes forming a cover layer on each of the first stress layer and the second stress layer, and removing portions of the cover layer formed on adjacent side surfaces of the first stress layer and the second stress layer.

Abstract: A method is provided for fabricating a semiconductor structure. The method includes forming a base substrate including a substrate and a stress layer formed in the substrate, where a top surface of the stress layer is higher than a surface of the substrate. The method also includes forming a first cover layer, where a first growth rate difference exists between growth rates of the first cover layer on the top surface of the stress layer and the first cover layer on a side surface of the stress layer. Further, the method includes forming a second cover layer, where a second growth rate difference exists between growth rates of the second cover layer on the top surface of the stress layer and the second cover layer on the side surface of the stress layer, and the second growth rate difference is larger than the first growth rate difference.

Abstract: A semiconductor structure and a method for fabricating the semiconductor structure are provided. The method includes forming an epitaxial layer in a substrate. The epitaxial layer includes a first region having a first crystal plane and a second region having a second crystal plane, and indices of lattice planes of the first crystal plane and the second crystal plane are different. The method also includes forming a capping structure including one or more capping layers on the first region and the second region. Forming the capping layer includes forming an initial capping layer having different thicknesses on the first region and the second region; and etching the initial capping layer to reduce a thickness difference between the initial capping layer on the first region and the initial capping layer on the second region. Further, the method includes forming an electrode electrically connected to the capping structure.

Abstract: A method is provided for fabricating a semiconductor structure. The method includes forming a base substrate including a substrate and a stress layer formed in the substrate, where a top surface of the stress layer is higher than a surface of the substrate. The method also includes forming a first cover layer, where a first growth rate difference exists between growth rates of the first cover layer on the top surface of the stress layer and the first cover layer on a side surface of the stress layer. Further, the method includes forming a second cover layer, where a second growth rate difference exists between growth rates of the second cover layer on the top surface of the stress layer and the second cover layer on the side surface of the stress layer, and the second growth rate difference is larger than the first growth rate difference.

Abstract: A method is provided for fabricating a semiconductor structure. The method includes providing a substrate including a first region for forming a first transistor and a second region for forming a second transistor. The method also includes forming a first stress layer in the substrate in the first region and a second stress layer in the substrate in the second region, wherein top surfaces of the first stress layer and the second stress layer are above a surface of the substrate. Further, the method includes forming a cover layer on each of the first stress layer and the second stress layer, and removing portions of the cover layer formed on adjacent side surfaces of the first stress layer and the second stress layer.

Abstract: The present application presents a light emitting diode module comprising a substrate including a first insulating layer, a second insulating layer, and a metal layer between the first and the second insulating layers; a groove formed at the first insulating layer for exposing the metal layer; and a light emitting element disposed at the groove, and including an LED chip and body part surrounding the LED chip, wherein the LED chip contacts the metal layer for radiating heat.

Abstract: The present application presents a light emitting diode module comprising a substrate including a first insulating layer, a second insulating layer, and a metal layer between the first and the second insulating layers; a groove formed at the first insulating layer for exposing the metal layer; and a light emitting element disposed at the groove, and including an LED chip and body part surrounding the LED chip, wherein the LED chip contacts the metal layer for radiating heat.

Abstract: A vehicle covering device having a housing integral with an axle having a folding crank handle to utilize a reeling action useful in the withdrawing and retracting of a folding cover comprised of a sheet like material that when withdrawn can be expanded to cover a vehicles body by manipulation of an end rod attached to said folding covers end portion that is pulled through the jam of a trunk and over a vehicles forward body to effectively protect said vehicle. Additionally the device has base elements integral to its housing for providing support and if desired a secondary rear folding cover that may withdrawn in the same manner that may be utilized to cover the rear or trunk portion of a vehicle as well.