Abstract: A positioning method, applied to a first apparatus, includes obtaining a first query request. The first query request is at least used for requesting to query position information of a second apparatus. The positioning method also includes determining apparatus information. The apparatus information includes first position status information and first battery level information. The first position status information indicates whether the second apparatus is accommodated in a third apparatus. The first battery level information indicates one or more of a battery level of the second apparatus or a battery level of the third apparatus. The positioning further includes determining a target apparatus based on the apparatus information. The target apparatus is the second apparatus, the third apparatus, or a fourth apparatus accommodated in the third apparatus.

Abstract: A first device sends first control information and second control information to a second device. At least one of a first field or a second field in the first control information indicates a format of the first control information and a format of the second control information. A first format of the first control information indicates a time-frequency resource for feeding back a specified message by the second device. A third format of the second control information indicates a redundancy version of the specified message fed back by the second device. When the first control information is in the first format and the second control information is in the third format, the first device receives, on the time-frequency resource, the specified message fed back by the second device.

Abstract: This application discloses an information sending method and an apparatus, and relate to the communication field. The method includes: A first terminal sends a first indication message to a second terminal, where the first indication message indicates the second terminal to report first information; the second terminal reports the first information to the first terminal according to the first indication message, where the first information indicates channel state information of a channel resource; the first terminal sends a second indication message to the second terminal, where the second indication message indicates information about a first resource set, the first resource set is determined by the first terminal based on the first information, and a resource in the first resource set is a resource for sidelink communication.

Abstract: A method includes a first device that sends a beacon message on a beacon indication resource corresponding to a first resource, where the beacon message indicates that the first resource is used by a device in a first user group and another user group cannot use all or a part of the first resource; or the first device skips sending the beacon message on the beacon indication resource corresponding to the first resource such that a device in the other user group determines that the first resource is not used by the device in the first user group and all or part of the first resource can be temporarily used by the device in the other user group.

Abstract: This application provides an orientation measurement method and a terminal device, to consider both auditory experience and an effective distance for measuring an orientation, and may be applied to a communication system. The method includes: A first terminal device receives and/or sends an acoustic wave signal on a first acoustic wave frequency band, to measure a relative orientation between the first terminal device and a second terminal device. The first terminal device obtains first information, where the first information includes first signal strength and distance information between the second terminal device and the first terminal device. The first terminal device determines a target acoustic wave frequency band based on the first information. The first terminal device switches, if the target acoustic wave frequency band is different from the first acoustic wave frequency band, to the target acoustic wave frequency band to continue receiving and/or sending the acoustic wave signal.

Abstract: The present disclosure relates to distance measurement methods, apparatuses, and systems, and readable storage media. An example method incudes: obtaining first offset time and a first moment, where the first offset time is a time difference between a system clock of a first device and a second device, and the first moment is a moment at which the second device sends a distance measurement signal; obtaining a second moment at which the distance measurement signal is received, where the second moment is obtained based on a third moment at which the first device starts to receive the distance measurement signal and a receiving time interval; and obtaining a distance between the first device and the second device based on the first offset time, the first moment, and the second moment.

Abstract: A distance measurement method. A first electronic device establishes a communication connection to a second electronic device. The first electronic device receives a distance measurement instruction. The first electronic device receives a plurality of groups of sound wave signals sent by a speaker in the second electronic device. Then, the first electronic device determines, based on the plurality of groups of sound wave signals, a sending moment, and a sound wave velocity, a real-time distance between the first electronic device and the second electronic device when each group of sound wave signals are received by the first electronic device. Finally, the first electronic device continuously refreshes and displays the real-time distance between the first electronic device and the second electronic device that is obtained through calculation to improve display precision.

Abstract: This application provides a method for directing a user and an electronic device. A first electronic device exchanges an ultrasonic signal with a second electronic device, and the first electronic device outputs a directing signal according to the ultrasonic signal and angle information between the two devices, to guide user to search for the second electronic device. The first electronic device and the second electronic device do not need to be installed with a UWB chip, thereby reducing costs.

Abstract: The present disclosure relates to a temporary wafer bonding process including the steps of: providing a wafer for back processing by laminating a plain protective film on a front surface of the wafer; providing a rigid carrier; bonding the rigid carrier to the plain protective film by the intermediate of a bonding material layer; processing a back surface of the wafer; and separating the rigid carrier and the plain protective film from the wafer.

Abstract: A first device sends first control information and second control information to a second device. At least one of a first field or a second field in the first control information indicates a format of the first control information and a format of the second control information. A first format of the first control information indicates a time-frequency resource for feeding back a specified message by the second device. A third format of the second control information indicates a redundancy version of the specified message fed back by the second device. When the first control information is in the first format and the second control information is in the third format, the first device receives, on the time-frequency resource, the specified message fed back by the second device.

Abstract: A method includes a first device that sends a beacon message on a beacon indication resource corresponding to a first resource, where the beacon message indicates that the first resource is used by a device in a first user group and another user group cannot use all or a part of the first resource; or the first device skips sending the beacon message on the beacon indication resource corresponding to the first resource such that a device in the other user group determines that the first resource is not used by the device in the first user group and all or part of the first resource can be temporarily used by the device in the other user group.

Abstract: This application discloses an information sending method and an apparatus, and relate to the communication field. The method includes: A first terminal sends a first indication message to a second terminal, where the first indication message indicates the second terminal to report first information; the second terminal reports the first information to the first terminal according to the first indication message, where the first information indicates channel state information of a channel resource; the first terminal sends a second indication message to the second terminal, where the second indication message indicates information about a first resource set, the first resource set is determined by the first terminal based on the first information, and a resource in the first resource set is a resource for sidelink communication.

Abstract: A method includes receiving, from a reference node, a first positioning measurement reference signal transmitted through N transmission paths, where N is an integer greater than 1; measuring first positioning information based on the first positioning measurement reference signal on a first transmission path, where the first transmission path is one of the N transmission paths; and sending first indication information and a second positioning measurement reference signal to the reference node, where the first indication information is used to indicate the first transmission path, so that the reference node measures second positioning information on the first transmission path.

Abstract: According to an aspect of the present inventive concept there is provided a method for manufacturing a silicon on nitride, SON, substrate. The method comprises the steps of providing a semiconductor layer of a first crystal orientation, forming, on the semiconductor layer, an interface layer comprising a monocrystalline III-nitride layer forming a nucleation layer for a subsequent epitaxy process, and bonding a silicon substrate of a second crystal orientation with the interface layer.

Abstract: The disclosed technology generally relates to integrating semiconductor dies and more particularly to bonding semiconductor substrates. In an aspect, a method of bonding semiconductor substrates includes providing a first substrate and a second substrate. Each of the first substrate and the second substrate comprises a dielectric bonding layer comprising one or more a silicon carbon oxide (SiCO) layer, a silicon carbon nitride (SiCN) layer or a silicon carbide (SiC) layer. The method additionally includes, prior to bonding the first and second substrates, pre-treating each of the dielectric bonding layer of the first substrate and the dielectric bonding layer of the second substrate. Pre-treating includes a first plasma activation process in a plasma comprising an inert gas, a second plasma activation process in a plasma comprising oxygen, and a wet surface treatment including a water rinsing step or an exposure to a water-containing ambient.

Abstract: The disclosed technology generally relates to semiconductor wafer bonding, and more particularly to direct bonding by contacting surfaces of the semiconductor wafers. In one aspect, a method for bonding a first semiconductor substrate to a second semiconductor substrate by direct bonding is described. The substrates are both provided on their contact surfaces with a dielectric layer, followed by a CMP step for reducing the roughness of the dielectric layer. Then a layer of SiCN is deposited onto the dielectric layer, followed by a CMP step which reduces the roughness of the SiCN layer to the order of 1 tenth of a nanometer. Then the substrates are subjected to a pre-bond annealing step and then bonded by direct bonding, possibly preceded by one or more pre-treatments of the contact surfaces, and followed by a post-bond annealing step, at a temperature of less than or equal to 250° C.

Abstract: The disclosed technology generally relates to integrating semiconductor dies and more particularly to bonding semiconductor substrates. In an aspect, a method of bonding semiconductor substrates includes providing a first substrate and a second substrate. Each of the first substrate and the second substrate comprises a dielectric bonding layer comprising one or more a silicon carbon oxide (SiCO) layer, a silicon carbon nitride (SiCN) layer or a silicon carbide (SiC) layer. The method additionally includes, prior to bonding the first and second substrates, pre-treating each of the dielectric bonding layer of the first substrate and the dielectric bonding layer of the second substrate. Pre-treating includes a first plasma activation process in a plasma comprising an inert gas, a second plasma activation process in a plasma comprising oxygen, and a wet surface treatment including a water rinsing step or an exposure to a water-containing ambient.

Abstract: The disclosed technology generally relates to semiconductor wafer bonding, and more particularly to direct bonding by contacting surfaces of the semiconductor wafers. In one aspect, a method for bonding a first semiconductor substrate to a second semiconductor substrate by direct bonding is described. The substrates are both provided on their contact surfaces with a dielectric layer, followed by a CMP step for reducing the roughness of the dielectric layer. Then a layer of SiCN is deposited onto the dielectric layer, followed by a CMP step which reduces the roughness of the SiCN layer to the order of 1 tenth of a nanometer. Then the substrates are subjected to a pre-bond annealing step and then bonded by direct bonding, possibly preceded by one or more pre-treatments of the contact surfaces, and followed by a post-bond annealing step, at a temperature of less than or equal to 250° C.