Patents by Inventor Lana Jong

Lana Jong has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Embedded memory device having MIM capacitor formed in excavated structure
    Patent number: 9224794
    Abstract: A method of patterning a metal (141, 341, 841) on a vertical sidewall (132, 332, 832) of an excavated feature (130, 330, 830) includes placing a material (350) in the excavated feature such that a portion (435) of the metal is exposed in the excavated feature above the material, etching the exposed portion of the metal away from the vertical sidewall using a first wet etch chemistry, and removing the material from the excavated feature by etching it away using a second wet etch chemistry. The described method may be used to produce a MIM capacitor (800) suitable for an eDRAM device.
    Type: Grant
    Filed: April 23, 2013
    Date of Patent: December 29, 2015
    Assignee: Intel Corporation
    Inventors: Steven Keating, Nick Lindert, Nadia Rahhal-Orabi, Brian Doyle, Satyarth Suri, Swaminathan Sivakumar, Lana Jong, Lin Sha
  • METHOD OF PATTERNING A METAL ON A VERTICAL SIDEWALL OF AN EXCAVATED FEATURE, METHOD OF FORMING AN EMBEDDED MIM CAPACITOR USING SAME, AND EMBEDDED MEMORY DEVICE PRODUCED THEREBY
    Publication number: 20130234290
    Abstract: A method of patterning a metal (141, 341, 841) on a vertical sidewall (132, 332, 832) of an excavated feature (130, 330, 830) includes placing a material (350) in the excavated feature such that a portion (435) of the metal is exposed in the excavated feature above the material, etching the exposed portion of the metal away from the vertical sidewall using a first wet etch chemistry, and removing the material from the excavated feature by etching it away using a second wet etch chemistry. The described method may be used to produce a MIM capacitor (800) suitable for an eDRAM device.
    Type: Application
    Filed: April 23, 2013
    Publication date: September 12, 2013
    Inventors: Steven Keating, Nick Lindert, Nadia Rahhal-Orabi, Brian Doyle, Satyarth Suri, Swaminathan Sivakumar, Lana Jong, Lin Sha
  • Embedded memory device having MIM capacitor formed in excavated structure
    Patent number: 8441057
    Abstract: A method of patterning a metal (141, 341, 841) on a vertical sidewall (132, 332, 832) of an excavated feature (130, 330, 830) includes placing a material (350) in the excavated feature such that a portion (435) of the metal is exposed in the excavated feature above the material, etching the exposed portion of the metal away from the vertical sidewall using a first wet etch chemistry, and removing the material from the excavated feature by etching it away using a second wet etch chemistry. The described method may be used to produce a MIM capacitor (800) suitable for an eDRAM device.
    Type: Grant
    Filed: February 16, 2011
    Date of Patent: May 14, 2013
    Assignee: Intel Corporation
    Inventors: Steven J. Keating, Nick Lindert, Nadia Rahhal-Orabi, Brian Doyle, Satyarth Suri, Swaminathan Sivakumar, Lana Jong, Lin Sha
  • METHOD OF PATTERNING A METAL ON A VERTICAL SIDEWALL OF AN EXCAVATED FEATURE, METHOD OF FORMING AN EMBEDDED MIM CAPACITOR USING SAME, AND EMBEDDED MEMORY DEVICE PRODUCED THEREBY
    Publication number: 20110134583
    Abstract: A method of patterning a metal (141, 341, 841) on a vertical sidewall (132, 332, 832) of an excavated feature (130, 330, 830) includes placing a material (350) in the excavated feature such that a portion (435) of the metal is exposed in the excavated feature above the material, etching the exposed portion of the metal away from the vertical sidewall using a first wet etch chemistry, and removing the material from the excavated feature by etching it away using a second wet etch chemistry. The described method may be used to produce a MIM capacitor (800) suitable for an eDRAM device.
    Type: Application
    Filed: February 16, 2011
    Publication date: June 9, 2011
    Inventors: Steve J. Keating, Nick Lindert, Nadia Rahhal-Orabi, Brian Doyle, Satyarth Suri, Swaminathan Sivakumar, Lana Jong, Lin Sha
  • Method of patterning a metal on a vertical sidewall of an excavated feature, method of forming an embedded MIM capacitor using same, and embedded memory device produced thereby
    Patent number: 7927959
    Abstract: A method of patterning a metal (141, 341, 841) on a vertical sidewall (132, 332, 832) of an excavated feature (130, 330, 830) includes placing a material (350) in the excavated feature such that a portion (435) of the metal is exposed in the excavated feature above the material, etching the exposed portion of the metal away from the vertical sidewall using a first wet etch chemistry, and removing the material from the excavated feature by etching it away using a second wet etch chemistry. The described method may be used to produce a MIM capacitor (800) suitable for an eDRAM device.
    Type: Grant
    Filed: September 30, 2008
    Date of Patent: April 19, 2011
    Assignee: Intel Corporation
    Inventors: Steven J. Keating, Nick Lindert, Nadia Rahhal-Orabi, Brian Doyle, Satyarth Suri, Swaminathan Sivakumar, Lana Jong, Lin Sha
  • Method of patterning a metal on a vertical sidewall of an excavated feature, method of forming an embedded MIM capacitor using same, and embedded memory device produced thereby
    Publication number: 20100079924
    Abstract: A method of patterning a metal (141, 341, 841) on a vertical sidewall (132, 332, 832) of an excavated feature (130, 330, 830) includes placing a material (350) in the excavated feature such that a portion (435) of the metal is exposed in the excavated feature above the material, etching the exposed portion of the metal away from the vertical sidewall using a first wet etch chemistry, and removing the material from the excavated feature by etching it away using a second wet etch chemistry. The described method may be used to produce a MIM capacitor (800) suitable for an eDRAM device.
    Type: Application
    Filed: September 30, 2008
    Publication date: April 1, 2010
    Inventors: Steven J. Keating, Nick Lindert, Nadia Rahhal-Orabi, Brian Doyle, Satyarth Suri, Swaminathan Sivakumar, Lana Jong, Lin Sha