Abstract: An apparatus including a superstructure comprising: a vacuum collection pod comprising a vessel with a first opening near the base, a second opening near the top of the vessel for a vacuum system, and a third opening near the top of the cylindrical vessel for a hose delivering solid and liquid materials; a rotary airlock valve coupled to the first opening; a vacuum system attached to the superstructure, wherein the inlet of the vacuum system is in fluid communication with the second opening near the top of the vessel using a vacuum line; and a solids separator below the rotary airlock valve, the solids separator comprising a drill cuttings dryer, an effluent tank configured to collect effluent from the solids separator, and a centrifugal pump configured to remove the effluent from the effluent tank. Methods of treating drill cuttings include the use of the apparatus.

Abstract: An apparatus including a superstructure comprising: a vacuum collection pod comprising a vessel with a first opening near the base, a second opening near the top of the vessel for a vacuum system, and a third opening near the top of the cylindrical vessel for a hose delivering solid and liquid materials; a rotary airlock valve coupled to the first opening; a vacuum system attached to the superstructure, wherein the inlet of the vacuum system is in fluid communication with the second opening near the top of the vessel using a vacuum line; and a solids separator below the rotary airlock valve, the solids separator comprising a drill cuttings dryer, an effluent tank configured to collect effluent from the solids separator, and a centrifugal pump configured to remove the effluent from the effluent tank. Methods of treating drill cuttings include the use of the apparatus.

Abstract: A method is provided for reducing film surface roughness in Chemical Vapor Deposition (CVD) of dielectric films. The method may include removing dangling bonds from a film surface of a CVD dielectric film by a reactant. For reducing a surface roughness of a dielectric film, a further method may passivate a nonstoichiometric film surface of the dielectric film, or of a previous dielectric film, or of the dielectric film and of a previous dielectric film, by a reactant gas in the vapor environment. The dielectric film may include at least one out of the following group: ultraviolet light transparent Silicon Nitride (UVSIN), Silicon Rich Oxide (SRO), Silicon Dioxide (SiO2), Silicon Nitride (Si3N4), Phosphosilicate Glass (PSG), or Silicon Oxynitride (SiON) The reactant gas may include at least one out of the following group: Ammonia (NH3), Hydrogen (H2), Nitrous Oxide (N2O), or Oxygen (O2).

Abstract: A method is provided for reducing film surface roughness in Chemical Vapor Deposition (CVD) of dielectric films. The method may include removing dangling bonds from a film surface of a CVD dielectric film by a reactant. For reducing a surface roughness of a dielectric film, a further method may passivate a nonstoichiometric film surface of the dielectric film, or of a previous dielectric film, or of the dielectric film and of a previous dielectric film, by a reactant gas in the vapor environment. The dielectric film may include at least one out of the following group: ultraviolet light transparent Silicon Nitride (UVSIN), Silicon Rich Oxide (SRO), Silicon Dioxide (SiO2), Silicon Nitride (Si3N4), Phosphosilicate Glass (PSG), or Silicon Oxynitride (SiON) The reactant gas may include at least one out of the following group: Ammonia (NH3), Hydrogen (H2), Nitrous Oxide (N2O), or Oxygen (O2).