Patents by Inventor Lance Kim

Lance Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of nonstoichiometric CVD dielectric film surface passivation for film roughness control
    Patent number: 8524616
    Abstract: A method is provided for reducing film surface roughness in Chemical Vapor Deposition (CVD) of dielectric films. The method may include removing dangling bonds from a film surface of a CVD dielectric film by a reactant. For reducing a surface roughness of a dielectric film, a further method may passivate a nonstoichiometric film surface of the dielectric film, or of a previous dielectric film, or of the dielectric film and of a previous dielectric film, by a reactant gas in the vapor environment. The dielectric film may include at least one out of the following group: ultraviolet light transparent Silicon Nitride (UVSIN), Silicon Rich Oxide (SRO), Silicon Dioxide (SiO2), Silicon Nitride (Si3N4), Phosphosilicate Glass (PSG), or Silicon Oxynitride (SiON) The reactant gas may include at least one out of the following group: Ammonia (NH3), Hydrogen (H2), Nitrous Oxide (N2O), or Oxygen (O2).
    Type: Grant
    Filed: October 12, 2009
    Date of Patent: September 3, 2013
    Assignee: Microchip Technology Incorporated
    Inventors: Lance Kim, Kwanghoon Kim
  • Method of Nonstoichiometric CVD Dielectric Film Surface Passivation for Film Roughness Control
    Publication number: 20100120261
    Abstract: A method is provided for reducing film surface roughness in Chemical Vapor Deposition (CVD) of dielectric films. The method may include removing dangling bonds from a film surface of a CVD dielectric film by a reactant. For reducing a surface roughness of a dielectric film, a further method may passivate a nonstoichiometric film surface of the dielectric film, or of a previous dielectric film, or of the dielectric film and of a previous dielectric film, by a reactant gas in the vapor environment. The dielectric film may include at least one out of the following group: ultraviolet light transparent Silicon Nitride (UVSIN), Silicon Rich Oxide (SRO), Silicon Dioxide (SiO2), Silicon Nitride (Si3N4), Phosphosilicate Glass (PSG), or Silicon Oxynitride (SiON) The reactant gas may include at least one out of the following group: Ammonia (NH3), Hydrogen (H2), Nitrous Oxide (N2O), or Oxygen (O2).
    Type: Application
    Filed: October 12, 2009
    Publication date: May 13, 2010
    Inventors: Lance Kim, Kwanghoon Kim