Patents by Inventor Lance McDowell

Lance McDowell has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Group IV and group IV-VI semiconductor heterojunction devices
    Patent number: 11271131
    Abstract: A semiconductor PV detector comprises a Ge layer and a Pb-chalcogenide layer coupled to the Ge layer. The Ge layer comprises a first conduction band with a first conduction potential and a first valence band with a first valence potential. The Pb-chalcogenide layer comprises a second conduction band with a second conduction potential that is lower than the first conduction potential and a second valence band with a second valence potential that is lower than the first valence potential. The Ge layer and the Pb-chalcogenide layer form a heterojunction configured to allow electrons to flow from the Ge layer to the Pb-chalcogenide layer and allow holes to flow from the Pb-chalcogenide layer to the Ge layer.
    Type: Grant
    Filed: August 13, 2020
    Date of Patent: March 8, 2022
    Assignee: The Board of Regents of the University of Oklahoma
    Inventors: Zhisheng Shi, Jijun Qiu, Lance McDowell
  • Group IV and Group IV-VI Semiconductor Heterojunction Devices
    Publication number: 20210050468
    Abstract: A semiconductor PV detector comprises a Ge layer and a Pb-chalcogenide layer coupled to the Ge layer. The Ge layer comprises a first conduction band with a first conduction potential and a first valence band with a first valence potential. The Pb-chalcogenide layer comprises a second conduction band with a second conduction potential that is lower than the first conduction potential and a second valence band with a second valence potential that is lower than the first valence potential. The Ge layer and the Pb-chalcogenide layer form a heterojunction configured to allow electrons to flow from the Ge layer to the Pb-chalcogenide layer and allow holes to flow from the Pb-chalcogenide layer to the Ge layer.
    Type: Application
    Filed: August 13, 2020
    Publication date: February 18, 2021
    Inventors: Zhisheng Shi, Jijun Qiu, Lance McDowell