Patents by Inventor Lance S. Robertson
Lance S. Robertson has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7807978Abstract: The present invention provides a method for implanting charged particles in a substrate and a method for manufacturing an integrated circuit. The method for implanting charged particles in a substrate, among other steps, includes projecting a beam of charged particles (320) to a substrate (330), the beam of charged particles (320) having a given beam divergence; and forming a diverged beam of charged particles (360) by subjecting the beam of charged particles (320) to an energy field (350), thereby causing the beam of charged particles (320) to have a larger beam divergence. The method then desires implanting the diverged beam of charged particles (360) into the substrate (330).Type: GrantFiled: May 5, 2008Date of Patent: October 5, 2010Assignee: Texas Instruments IncorporatedInventors: James D. Bernstein, Lance S. Robertson, Said Ghneim, Jiejie Xu, Jeffrey Loewecke
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Patent number: 7638415Abstract: The present invention provides a method for manufacturing a semiconductor device. In one embodiment, the method for manufacturing the semiconductor device includes a method for manufacturing a zener diode, including among others, forming a doped well (240) within a substrate (210) and forming a suppression implant (420) within the substrate (210). The method for manufacturing the zener diode may further include forming a cathode (620) and an anode (520) within the substrate (210), wherein the suppression implant (420) is located proximate the doped well (240) and configured to reduce threading dislocations.Type: GrantFiled: November 7, 2008Date of Patent: December 29, 2009Assignee: Texas Instruments IncorporatedInventors: Martin Mollat, Tathagata Chatterjee, Henry L. Edwards, Lance S. Robertson, Richard B. Irwin, Binghua Hu
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Publication number: 20090061606Abstract: The present invention provides a method for manufacturing a semiconductor device. In one embodiment, the method for manufacturing the semiconductor device includes a method for manufacturing a zener diode, including among others, forming a doped well (240) within a substrate (210) and forming a suppression implant (420) within the substrate (210). The method for manufacturing the zener diode may further include forming a cathode (620) and an anode (520) within the substrate (210), wherein the suppression implant (420) is located proximate the doped well (240) and configured to reduce threading dislocations.Type: ApplicationFiled: November 7, 2008Publication date: March 5, 2009Applicant: TEXAS INSTRUMENTS INCORPORATEDInventors: MARTIN MOLLAT, TATHAGATA CHATTERJEE, HENRY L. EDWARDS, LANCE S. ROBERTSON, RICHARD B. IRWIN, BINGHUA HU
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Patent number: 7466009Abstract: The present invention provides a method for manufacturing a semiconductor device. In one embodiment, the method for manufacturing the semiconductor device includes a method for manufacturing a zener diode, including among others, forming a doped well within a substrate and forming a suppression implant within the substrate. The method for manufacturing the zener diode may further include forming a cathode and an anode within the substrate, wherein the suppression implant is located proximate the doped well and configured to reduce threading dislocations.Type: GrantFiled: June 5, 2006Date of Patent: December 16, 2008Assignee: Texas Instruments IncorporatedInventors: Martin Mollat, Tathagata Chatterjee, Henry L. Edwards, Lance S. Robertson, Richard B. Irwin, Binghua Hu
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Patent number: 7422967Abstract: The present invention provides a method for manufacturing a semiconductor device. In one embodiment of the present invention, without limitation, the method for manufacturing the semiconductor device includes forming a gate structure (120) over a substrate (110) and forming source/drain regions (190) in the substrate (110) proximate the gate structure (120). The method further includes forming fluorine containing regions (220) in the source/drain regions (190) employing a fluorine containing plasma using a power level of less than about 75 Watts, forming a metal layer (310) over the substrate (110) and fluorine containing regions (220), and reacting the metal layer (310) with the fluorine containing regions (220) to form metal silicide regions (410) in the source/drain regions (190).Type: GrantFiled: May 12, 2005Date of Patent: September 9, 2008Assignee: Texas Instruments IncorporatedInventors: Juanita DeLoach, Lindsey H. Hall, Lance S. Robertson, Jiong-Ping Lu, Donald S. Miles
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Publication number: 20080206971Abstract: The present invention provides a method for implanting charged particles in a substrate and a method for manufacturing an integrated circuit. The method for implanting charged particles in a substrate, among other steps, includes projecting a beam of charged particles (320) to a substrate (330), the beam of charged particles (320) having a given beam divergence; and forming a diverged beam of charged particles (360) by subjecting the beam of charged particles (320) to an energy field (350), thereby causing the beam of charged particles (320) to have a larger beam divergence. The method then desires implanting the diverged beam of charged particles (360) into the substrate (330).Type: ApplicationFiled: May 5, 2008Publication date: August 28, 2008Applicant: TEXAS INSTRUMENTS INCORPORATEDInventors: James D. Bernstein, Lance S. Robertson, Said Ghneim, Jiejie Xu, Jeffrey Loewecke
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Publication number: 20080142724Abstract: The present invention provides a method for implanting charged particles in a substrate and a method for manufacturing an integrated circuit. The method for implanting charged particles in a substrate, among other steps, includes projecting a beam of charged particles (320) to a substrate (330), the beam of charged particles (320) having a given beam divergence, and forming a diverged beam of charged particles (360) by subjecting the beam of charged particles (320) to an energy field (350), thereby causing the beam of charged particles (320) to have a larger beam divergence. The method then desires implanting the diverged beam of charged particles (360) into the substrate (330).Type: ApplicationFiled: February 29, 2008Publication date: June 19, 2008Applicant: Texas Instruments IncorporatedInventors: James D. Bernstein, Lance S. Robertson, Said Ghneim, Jiejie Xu, Jeffrey Loewecke
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Patent number: 7385202Abstract: The present invention provides a method for implanting charged particles in a substrate and a method for manufacturing an integrated circuit. The method for implanting charged particles in a substrate, among other steps, includes projecting a beam of charged particles (320) to a substrate (330), the beam of charged particles (320) having a given beam divergence, and forming a diverged beam of charged particles (360) by subjecting the beam of charged particles (320) to an energy field (350), thereby causing the beam of charged particles (320) to have a larger beam divergence. The method then desires implanting the diverged beam of charged particles (360) into the substrate (330).Type: GrantFiled: December 7, 2004Date of Patent: June 10, 2008Assignee: Texas Instruments IncorporatedInventors: James D. Bernstein, Lance S. Robertson, Said Ghneim, Jiejie Xu, Jeffrey Loewecke
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Patent number: 7335595Abstract: A silicide 160 is formed in exposed silicon on a semiconductor wafer 10 by a method that includes forming a thin interface layer 140 over the semiconductor wafer 10 and performing a first low temperature anneal to create the silicide 160. The method further includes removing an unreacted portion of the interface layer 140 and performing a second low temperature anneal to complete the formation of a low resistance silicide 160.Type: GrantFiled: June 17, 2005Date of Patent: February 26, 2008Assignee: Texas Instruments IncorporatedInventors: Lance S. Robertson, Jiong-Ping Lu, Donald S. Miles
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Publication number: 20070281433Abstract: The present invention provides a method for manufacturing a semiconductor device. In one embodiment, the method for manufacturing the semiconductor device includes a method for manufacturing a zener diode, including among others, forming a doped well within a substrate and forming a suppression implant within the substrate. The method for manufacturing the zener diode may further include forming a cathode and an anode within the substrate, wherein the suppression implant is located proximate the doped well and configured to reduce threading dislocations.Type: ApplicationFiled: June 5, 2006Publication date: December 6, 2007Applicant: Texas Instruments IncorporatedInventors: Martin Mollat, Tathagata Chatterjee, Henry L. Edwards, Lance S. Robertson, Richard B. Irwin, Binghua Hu
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Patent number: 7253072Abstract: The present invention provides a method for implanting ions in a substrate and a method for manufacturing an integrated circuit. The method for implanting ions in a substrate, among other steps, including placing a substrate (410) on an implant platen (405) such that a predominant axes (430) of the substrate (410) is rotated about 30 degrees to about 60 degrees or about 120 degrees to about 150 degrees offset from a radial with respect to the implant platen (405), and further wherein the substrate (410) is not tilted. The method further includes implanting ions into the substrate (410), the rotated position of the predominant axes (430) reducing shadowing.Type: GrantFiled: December 7, 2004Date of Patent: August 7, 2007Assignee: Texas Instruments IncorporatedInventors: James D. Bernstein, Lance S. Robertson, Said Ghneim, Nandu Mahalingam, Benjamin Moser
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Patent number: 7232744Abstract: The present invention provides a method for implanting a dopant in a substrate and a method for manufacturing a semiconductor device. The method for implanting a dopant, among other steps, including tilting a substrate (310) located on or over an implant platen (305) about an axis in a first direction with respect to an implant source (320) and implanting a portion of an implant dose within the substrate (310) tilted in the first direction. The method further includes tilting the substrate (310) having already been tilted in the first direction about the axis in a second opposite direction, and implanting at least a portion of the implant dose within the substrate (310) tilted in the second opposite direction.Type: GrantFiled: October 1, 2004Date of Patent: June 19, 2007Assignee: Texas Instruments IncorporatedInventors: Said Ghneim, James D. Bernstein, Lance S. Robertson, Jiejie Xu, Jeffrey Loewecke
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Patent number: 7208409Abstract: Fluorine containing regions (70) are formed in the source and drain regions (60) of the MOS transistor. A metal layer (90) is formed over the fluorine containing regions (70) and the source and drain regions (60). The metal layer is reacted with the underlying fluorine containing regions to form a metal silicide.Type: GrantFiled: March 7, 2005Date of Patent: April 24, 2007Assignee: Texas Instruments IncorporatedInventors: Jiong-Ping Lu, Duofeng Yue, Xiaozhan Liu, Donald S. Miles, Lance S. Robertson
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Semiconductor device having optimized shallow junction geometries and method for fabrication thereof
Patent number: 7033879Abstract: The present invention provides, in one embodiment, a method of fabricating a semiconductor device (100). The method comprises growing an oxide layer (120) on a gate structure (114) and a substrate (102) and implanting a dopant (124) into the substrate (102) and the oxide layer (120). Implantation is such that a portion of the dopant (124) remains in the oxide layer (120) to form an implanted oxide layer (126). The method further includes depositing a protective oxide layer (132) on the implanted oxide layer (126) and forming etch-resistant off-set spacers (134). The etch-resistant off-set spacers (134) are formed adjacent sidewalls of the gate structure (114) and on the protective oxide layer (132). The etch resistant off-set spacers having an inner perimeter (135) adjacent the sidewalls and an opposing outer perimeter (136). The method also comprises removing portions of the protective oxide layer (132) lying outside the outer perimeter (136) of the etch-resistant off-set spacers (134).Type: GrantFiled: April 29, 2004Date of Patent: April 25, 2006Assignee: Texas Instruments IncorporatedInventors: Brian E. Hornung, Xin Zhang, Lance S. Robertson, Srinivasan Chakravarthi, Beriannan Chidambaram -
Patent number: 7029967Abstract: A method for forming metal silicide regions in source and drain regions (160, 170) is described. Prior to the thermal annealing of the source and drain regions (160, 170), germanium is implanted into a semiconductor substrate adjacent to sidewall structures (90, 95) formed adjacent gate structures (60, 70). The position of the implanted germanium species in the semiconductor substrate will overlap the source and drain regions (160, 170). Following thermal annealing of the source and drain regions (160, 170), the implanted germanium prevents the formation of metal silicide spikes.Type: GrantFiled: July 21, 2004Date of Patent: April 18, 2006Assignee: Texas Instruments IncorporatedInventors: Song Zhao, Sue E. Crank, Amitava Chatterjee, Kaiping Liu, Jiong-Ping Lu, Donald S. Miles, Duofeng Yue, Lance S. Robertson
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Publication number: 20040115892Abstract: A method of forming a semiconductor device includes forming at least one amorphous region within an at least partially formed semiconductor device. The method also includes implanting a halogen species in the amorphous region of the at least partially formed semiconductor device. The method further includes doping at least a portion of the at least one amorphous region to form at least one junction within the at least partially formed semiconductor device. The method also includes performing solid phase epitaxial re-growth to activate the doped portion of the at least one amorphous region of the at least partially formed semiconductor device.Type: ApplicationFiled: November 21, 2003Publication date: June 17, 2004Inventor: Lance S. Robertson
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Publication number: 20040115889Abstract: The invention describes a method for forming ultra shallow junction formation. Dopant species are implanted into a semiconductor. Solid phase epitaxy anneals and subsequent ultra high temperature anneals are performed following the implantation processes.Type: ApplicationFiled: November 25, 2003Publication date: June 17, 2004Inventors: Amitabh Jain, Lance S. Robertson
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Patent number: 6699771Abstract: A method of forming a semiconductor device includes forming at least one amorphous region within an at least partially formed semiconductor device. The method also includes implanting a halogen species in the amorphous region of the at least partially formed semiconductor device. The method further includes doping at least a portion of the at least one amorphous region to form at least one junction within the at least partially formed semiconductor device. The method also includes performing solid phase epitaxial re-growth to activate the doped portion of the at least one amorphous region of the at least partially formed semiconductor device.Type: GrantFiled: August 6, 2002Date of Patent: March 2, 2004Assignee: Texas Instruments IncorporatedInventor: Lance S. Robertson
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Publication number: 20040029350Abstract: A method of forming a semiconductor device includes forming at least one amorphous region within an at least partially formed semiconductor device. The method also includes implanting a halogen species in the amorphous region of the at least partially formed semiconductor device. The method further includes doping at least a portion of the at least one amorphous region to form at least one junction within the at least partially formed semiconductor device. The method also includes performing solid phase epitaxial re-growth to activate the doped portion of the at least one amorphous region of the at least partially formed semiconductor device.Type: ApplicationFiled: August 6, 2002Publication date: February 12, 2004Inventor: Lance S. Robertson