Abstract: Programmable metallization memory cells having a first metal contact and a second metal contact with an ion conductor solid electrolyte material between the metal contacts. The first metal contact has a filament placement structure thereon extending into the ion conductor material. In some embodiments, the second metal contact also has a filament placement structure thereon extending into the ion conductor material toward the first filament placement structure. The filament placement structure may have a height of at least about 2 nm.

Abstract: Programmable metallization memory cells having a first metal contact and a second metal contact with an ion conductor solid electrolyte material between the metal contacts. The first metal contact has a filament placement structure thereon extending into the ion conductor material. In some embodiments, the second metal contact also has a filament placement structure thereon extending into the ion conductor material toward the first filament placement structure. The filament placement structure may have a height of at least about 2 nm.

Abstract: A memory cell that includes a memory element configured for switching from a first data state to a second data state by passage of current therethrough. The memory cell includes a top electrode and a bottom electrode for providing the current through the memory cell, and an alignment element positioned at least between the top electrode and the top surface of the memory element, the alignment element having an electrically conductive body tapering from the top electrode to the top surface of the memory element. Methods for forming the memory cell are also described.

Abstract: Programmable metallization memory cells having a first metal contact and a second metal contact with an ion conductor solid electrolyte material between the metal contacts. The first metal contact has a filament placement structure thereon extending into the ion conductor material. In some embodiments, the second metal contact also has a filament placement structure thereon extending into the ion conductor material toward the first filament placement structure. The filament placement structure may have a height of at least about 2 nm.

Abstract: Programmable metallization memory cells having a first metal contact and a second metal contact with an ion conductor solid electrolyte material between the metal contacts. The first metal contact has a filament placement structure thereon extending into the ion conductor material. In some embodiments, the second metal contact also has a filament placement structure thereon extending into the ion conductor material toward the first filament placement structure. The filament placement structure may have a height of at least about 2 nm.

Abstract: Programmable metallization memory cells having a first metal contact and a second metal contact with an ion conductor solid electrolyte material between the metal contacts. The first metal contact has a filament placement structure thereon extending into the ion conductor material. In some embodiments, the second metal contact also has a filament placement structure thereon extending into the ion conductor material toward the first filament placement structure. The filament placement structure may have a height of at least about 2 nm.

Abstract: Programmable metallization memory cells having a first metal contact and a second metal contact with an ion conductor solid electrolyte material between the metal contacts. The first metal contact has a filament placement structure thereon extending into the ion conductor material. In some embodiments, the second metal contact also has a filament placement structure thereon extending into the ion conductor material toward the first filament placement structure. The filament placement structure may have a height of at least about 2 nm.

Abstract: The present invention is a lubricative and protective thin film often used within micro electromechanical systems. The film comprises an adhesion layer and a self-assembled monolayer, the self-assembled monolayer having a head group bonded to the adhesion layer and a tail group attached to the head group.

Abstract: A method for creating a pattern on an exposure site of a material blank using an exposure apparatus includes providing a mask having a first mask pattern. The mask is positioned between the exposure apparatus and the material blank. The exposure site of the material blank is exposed. One or more additional exposure events are performed for patterning the exposure site of the material blank. Between each exposure event, the exposure site of the material blank is repositioned in a lateral direction with respect to the mask. Between successive exposure events involving the first mask pattern, there is a relative movement between the mask and the material blank of a distance less than or equal to a length of the first mask pattern.

Abstract: A slider includes a transducer-level microactuator for selectively positioning a transducer portion of the slider radially with respect to circumferential data tracks of a rotatable disc. The slider includes a slider body having a leading edge and a trailing edge, a transducer body and a flexure body. The transducer body is spaced from the trailing edge of the sliding body and includes at least one transducer element. The flexure body extends from the trailing edge of the slider body and includes a first anchor point connected to the slider body and a second anchor point connected to the transducer body. The basecoat layer is deposited on the trailing edge of the slider body and substantially surrounds the flexure body wherein a gap separates the flexure body from the basecoat. A first actuation means is formed on the basecoat and a second actuation means is formed on the transducer body adjacent the slider body.

Abstract: A slider includes a slider body having a trailing edge and a leading edge. The slider also includes a thin film structure deposited in layers on the trailing edge. The thin film structure includes a write transducer configured to read and write to a storage medium. The thin film structure also includes a non-thermally activated actuator at least partially formed with the write transducer and configured to move the write transducer relative to the trailing edge.

Abstract: A head with a heating element and control regime therefor is disclosed. In embodiments described, the control regime or controller energizes the heater or heating element to provide intermittent heating between read or write operations to optimize transducer temperature and operating characteristics or parameters of a data storage device. In particular, in one embodiment described, the controller provides a low amplitude signal or current to provide low grade thermal heating. In another embodiment, the controller provides a high amplitude signal or current to preheat the transducer portion for write operations.