Patents by Inventor Lancy Tsung

Lancy Tsung has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Chemical etch solution and technique for imaging a device's shallow junction profile
    Publication number: 20080011717
    Abstract: The present invention provides, in one aspect, a method of imaging a microelectronics device 100. The method comprises cleaning, when contaminants are preset, a sample of a microelectronics device 100 to be imaged with a first solution comprising hydrofluoric acid, an inorganic acid and water, exposing the sample to a second solution comprising hydrofluoric acid, an inorganic acid and an organic acid, wherein the second solution forms a contrast between different regions within the sample, and producing an image of the contrasted sample.
    Type: Application
    Filed: July 23, 2007
    Publication date: January 17, 2008
    Applicant: TEXAS INSTRUMENTS INCORPORATED
    Inventors: Lancy Tsung, Adolfo Anciso, Doug Matheson
  • Chemical etch solution and technique for imaging a device's shallow junction profile
    Publication number: 20060145073
    Abstract: The present invention provides, in one aspect, a method of imaging a microelectronics device 100. The method comprises cleaning, when contaminants are preset, a sample of a microelectronics device 100 to be imaged with a first solution comprising hydrofluoric acid, an inorganic acid and water, exposing the sample to a second solution comprising hydrofluoric acid, an inorganic acid and an organic acid, wherein the second solution forms a contrast between different regions within the sample, and producing an image of the contrasted sample.
    Type: Application
    Filed: January 4, 2005
    Publication date: July 6, 2006
    Applicant: Texas Instruments, Inc.
    Inventors: Lancy Tsung, Adolfo Anciso, Doug Matheson
  • Mass production of cross-section TEM samples by focused ion beam deposition and anisotropic etching
    Patent number: 6884362
    Abstract: A method of preparing a TEM sample. A focused ion beam is used to deposit a mask on the material to be sampled. Reactive ion etching removes material not protected by the mask, leaving a wall thin enough to be imaged by TEM.
    Type: Grant
    Filed: February 18, 2003
    Date of Patent: April 26, 2005
    Assignee: Texas Instruments Incorporated
    Inventors: Lancy Tsung, Adolfo Anciso
  • Method to salicide source-line in flash memory with STI
    Patent number: 6803273
    Abstract: A method of forming a semiconductor component having a conductive line (24) and a silicide region (140) that crosses a trench (72). The method involves forming nitride sidewalls (130) to protect the stack during the silicidation process.
    Type: Grant
    Filed: May 18, 2000
    Date of Patent: October 12, 2004
    Assignee: Texas Instruments Incorporated
    Inventors: Thomas M. Ambrose, Freidoon Mehrad, Ming Yang, Lancy Tsung
  • Mass production of cross-section TEM samples by focused ion beam deposition and anisotropic etching
    Patent number: 6786978
    Abstract: A method of preparing a TEM sample. A focused ion beam is used to deposit a mask on the material to be sampled. Reactive ion etching removes material not protected by the mask, leaving a wall thin enough to be imaged by TEM.
    Type: Grant
    Filed: August 2, 2001
    Date of Patent: September 7, 2004
    Assignee: Texas Instruments Incorporated
    Inventors: Lancy Tsung, Adolfo Anciso
  • Mass production of cross-section TEM samples by focused ion beam deposition and anisotropic etching
    Publication number: 20030150836
    Abstract: A method of preparing a TEM sample. A focused ion beam is used to deposit- a mask on the material to be sampled. Reactive ion etching removes material not protected by the mask, leaving a wall thin enough to be imaged by TEM.
    Type: Application
    Filed: February 18, 2003
    Publication date: August 14, 2003
    Inventors: Lancy Tsung, Adolfo Anciso
  • Method to form an embedded flash memory circuit with reduced process steps
    Patent number: 6380031
    Abstract: A method to form an embedded FLASH integrated circuit with reduced processing steps is described. In the method a partial etch is performed on the control gate region of a polycrystalline silicon film (21). A multiple etch process is then used to simultaneously form the FLASH memory cell gate stack (54), the NMOS gate structure (94) and the PMOS gate structure (96).
    Type: Grant
    Filed: August 10, 2000
    Date of Patent: April 30, 2002
    Assignee: Texas Instruments Incorporated
    Inventors: Freidoon Mehrad, Jie Xia, Sandra Zheng, Lancy Tsung
  • Mass production of cross-section TEM samples by focused ion beam deposition and anisotropic etching
    Publication number: 20020019137
    Abstract: A method of preparing a TEM sample. A focused ion beam is used to deposit a mask on the material to be sampled. Reactive ion etching removes material not protected by the mask, leaving a wall thin enough to be imaged by TEM.
    Type: Application
    Filed: August 2, 2001
    Publication date: February 14, 2002
    Inventors: Lancy Tsung, Adolfo Anciso