Abstract: An ultra-low power consumption power supply structure, comprising: a first LDO circuit, a second LDO circuit, a first Bandgap module, a second Bandgap module and a switching circuit, wherein the first LDO circuit is used for providing an LDO output voltage when an SOC chip is in a normal operating mode, and the second LDO circuit is used for providing an LDO output voltage when the SOC chip is in an ultra-low power consumption mode; the first Bandgap module is used for providing, based on a main power supply voltage, a first reference voltage for the first LDO circuit at the time of power-on startup, and the second Bandgap module is used for providing a second reference voltage for the second LDO circuit after power-on startup is completed; and the switching circuit is used for switching the mode in which the first reference voltage is output by the first Bandgap module at the time of power-on startup to the mode in which the second reference voltage is output by the second Bandgap module after power-on start

Abstract: An ultra-low power consumption power supply structure, comprising: a first LDO circuit, a second LDO circuit, a first Bandgap module, a second Bandgap module and a switching circuit, wherein the first LDO circuit is used for providing an LDO output voltage when an SOC chip is in a normal operating mode, and the second LDO circuit is used for providing an LDO output voltage when the SOC chip is in an ultra-low power consumption mode; the first Bandgap module is used for providing, based on a main power supply voltage, a first reference voltage for the first LDO circuit at the time of power-on startup, and the second Bandgap module is used for providing a second reference voltage for the second LDO circuit after power-on startup is completed; and the switching circuit is used for switching the mode in which the first reference voltage is output by the first Bandgap module at the time of power-on startup to the mode in which the second reference voltage is output by the second Bandgap module after power-on start

Abstract: A test structure of a semiconductor device is provided. The test structure includes a semiconductor substrate, a transistor which includes a gate electrode formed on first and second active regions defined within the semiconductor substrate, and first and second junction regions which are arranged at both sidewalls of the gate electrode to reside within the first and second active regions and are silicided, and first and second pads through which electrical signals are applied to the silicided first and second junction regions and detected and which are formed on the same level as the gate electrode or the semiconductor substrate.