Abstract: The present disclosure provides a field-effect transistor structure and a method for fabricating the same. The method comprises: providing a substrate, and depositing at least one first material layer and at least one second material layer on a surface of the substrate; defining an active region and a shallow trench isolation region; etching the active region to form a channel region, a source region and a drain region; corroding the first material layer or second material layer in the groove region to obtain at least one nano-wire channel; depositing a dielectric layer and a gate structure layer on a surface of nano-wire channel; and fabricating a gate electrode, a source electrode and a drain electrode on surfaces of the gate structure layer, the source region and the drain region to complete the fabrication of the field-effect transistor.