Abstract: A manufacturing method of a mini-LED backlight plate and the mini-LED backlight plate are provided. The manufacturing method of the mini-LED backlight plate includes: providing a substrate, defining at least one display region, defining at least one mark region with metal mark objects in a non-display region, covering a mask on the substrate, exposing the at least one mark region, adopting a hydrophilic material to form a layer of a thin film on the at least one mark region, removing the mask, coating a hydrophobic passivation coating layer on the substrate, exposing the metal mark objects, and aligning by an exposure machine accurately.

Abstract: A backplane includes a drive substrate, a buffer layer, and a reflective layer. The buffer layer is disposed on the drive substrate. The reflective layer is disposed on the buffer layer. In the present disclosure, the buffer layer is provided on the drive substrate to protect the drive substrate during a screen printing process of the reflective layer. An light emitting diode panel is also provided.

Abstract: A color-filter-on-array (COA) array substrate and a method of fabricating the same are provided. The COA array substrate has: a base substrate; a thin film transistor (TFT) array structure disposed on the base substrate; a first protective layer disposed on the TFT array structure; a color photoresist layer disposed on the first protective layer; a second protective layer disposed on the color photoresist layer, wherein a through hole pass through the second protective layer, the color photoresist layer, and the first protective layer; a conductive layer disposed on the second protective layer and in the through hole, wherein the conductive layer is electrically connected to the TFT array structure; and a spacing layer disposed on the conductive layer and filled in the through hole. The COA array substrate can avoid problems of twill traces and rising product costs.

Abstract: A manufacturing method of a color filter substrate includes Step S1: providing a base and forming an antireflection layer on the base; and Step S2: forming a color resist layer on the antireflection layer, in which the color resist layer is formed through a photolithographic process including operations of coating photoresist, exposure, and development.

Abstract: A manufacturing method of a color filter substrate includes Step S1: providing a base and forming an antireflection layer on the base; and Step S2: forming a color resist layer on the antireflection layer, in which the color resist layer is formed through a photolithographic process including operations of coating photoresist, exposure, and development.

Abstract: The present invention provides a method for manufacturing a quantum dot color filter substrate, in which a black photoresist layer and a transparent photoresist layer are first coated and formed on a backing plate in sequence and then, first, second, and third patterns of a photo mask having different grey levels are used to pattern the black photoresist layer and the transparent photoresist layer to obtain a plurality of transparent barrier walls corresponding to the first pattern, sub spacers corresponding to the second pattern and located on the transparent barrier walls, and main spacers corresponding to the third pattern and located on the transparent barrier walls and also to obtain a plurality of black barrier walls covered by the plurality of transparent barrier walls, the plurality of black barrier walls and the plurality of transparent barrier walls located thereon collectively defining a plurality of pixel barrier walls; and then, patterned quantum dot layers are formed in sub-pixel zones that are

Abstract: The present invention provides a method for manufacturing a quantum dot color filter substrate, in which a black photoresist layer and a transparent photoresist layer are first coated and formed on a backing plate in sequence and then, first, second, and third patterns of a photo mask having different grey levels are used to pattern the black photoresist layer and the transparent photoresist layer to obtain a plurality of transparent barrier walls corresponding to the first pattern, sub spacers corresponding to the second pattern and located on the transparent barrier walls, and main spacers corresponding to the third pattern and located on the transparent barrier walls and also to obtain a plurality of black barrier walls covered by the plurality of transparent barrier walls, the plurality of black barrier walls and the plurality of transparent barrier walls located thereon collectively defining a plurality of pixel barrier walls; and then, patterned quantum dot layers are formed in sub-pixel zones that are