Abstract: A method for decolorizing a dyed textile comprising a synthetic fiber and a disperse dye, the method includes contacting the dyed textile with a super critical fluid thereby extracting at least a portion of the disperse dye from the textile into the super critical fluid and forming an at least partially decolorized textile.

Abstract: A method for decolorizing a dyed textile comprising a synthetic fiber and a disperse dye, the method includes contacting the dyed textile with a super critical fluid thereby extracting at least a portion of the disperse dye from the textile into the super critical fluid and forming an at least partially decolorized textile.

Abstract: A method and an integrated system for dyeing synthetic, natural, and blended textiles in the form of fabrics, yarns, and garments are provided. The integrated system includes a first pressurizing pump for pressurizing liquefied CO2 to supercritical CO2 (Sc—CO2); a second pressurizing pump for pressurizing CO2 to liquefied CO2; a liquefied CO2 storage vessel for storing the liquefied CO2 and the separated liquefied CO2 from the one or more cyclone separators; a heater for heating the Sc—CO2; a dyestuff vessel for mixing a dyestuff and the Sc—CO2 to obtain Sc—CO2-mixed dyestuff; a dyeing vessel for dyeing the textile by circulating the Sc—CO2 and the Sc—CO2-mixed dyestuff between the dyeing vessel and the dyestuff vessel; and one or more cyclone separators for removing the dyestuff from the Sc—CO2-mixed dyestuff to obtain separated liquefied CO2.

Abstract: A method is described for filling trenches with dielectric for shallow trench isolation which completely fills the trench and avoids problems due to dishing at the top of the trench. A trench is formed in a substrate having a second dielectric material formed thereon. The trench is lined with a third dielectric material. Sub atmospheric chemical vapor deposition, SACVD, of tetra-ethyl-ortho-silicate and ozone is used to grow a fourth dielectric on the surface of the second dielectric material and in the trench lined with the third dielectric material. The growth rate of fourth dielectric on the third dielectric is greater than the growth rate of the fourth dielectric on the second dielectric using SACVD of tetra-ethyl-ortho-silicate and ozone. The difference in growth rate assures that the trench is completely filled with fourth dielectric even for relatively thin layers of fourth dielectric grown on the second dielectric.