Patents by Inventor Lap Hung Chan

Lap Hung Chan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11802370
    Abstract: A method for decolorizing a dyed textile comprising a synthetic fiber and a disperse dye, the method includes contacting the dyed textile with a super critical fluid thereby extracting at least a portion of the disperse dye from the textile into the super critical fluid and forming an at least partially decolorized textile.
    Type: Grant
    Filed: February 24, 2021
    Date of Patent: October 31, 2023
    Assignee: The Hong Kong Research Institute of Textiles and Apparel Limited
    Inventors: Edwin Yee Man Keh, Lei Yao, Hok Chung Chan, Sai Lung Fung, Un Teng Lam, Lap Hung Chan, Lee Ying Yu
  • Publication number: 20220267949
    Abstract: A method for decolorizing a dyed textile comprising a synthetic fiber and a disperse dye, the method includes contacting the dyed textile with a super critical fluid thereby extracting at least a portion of the disperse dye from the textile into the super critical fluid and forming an at least partially decolorized textile.
    Type: Application
    Filed: February 24, 2021
    Publication date: August 25, 2022
    Inventors: Edwin Yee Man KEH, Lei YAO, Hok Chung CHAN, Sai Lung FUNG, Un Teng LAM, Lap Hung CHAN, Lee Ying YU
  • Patent number: 6165869
    Abstract: A method is described for filling trenches with dielectric for shallow trench isolation which completely fills the trench and avoids problems due to dishing at the top of the trench. A trench is formed in a substrate having a second dielectric material formed thereon. The trench is lined with a third dielectric material. Sub atmospheric chemical vapor deposition, SACVD, of tetra-ethyl-ortho-silicate and ozone is used to grow a fourth dielectric on the surface of the second dielectric material and in the trench lined with the third dielectric material. The growth rate of fourth dielectric on the third dielectric is greater than the growth rate of the fourth dielectric on the second dielectric using SACVD of tetra-ethyl-ortho-silicate and ozone. The difference in growth rate assures that the trench is completely filled with fourth dielectric even for relatively thin layers of fourth dielectric grown on the second dielectric.
    Type: Grant
    Filed: June 11, 1998
    Date of Patent: December 26, 2000
    Assignee: Chartered Semiconductor Manufacturing, Ltd.
    Inventors: Gang Qian, Chock Hing Gan, Lap Hung Chan, Poh Suan Tan