Abstract: This invention provides compositions of matter that contain an electron emitting substance and an expansion material. The expansion material may, for example, be an intercalation compound. When a film is formed from the composition, expansion of the expansion material typically causes rupturing or fracturing of the film. No further treatment of the surface of the film is typically required after expansion of the expansion material to obtain good emission properties. A surface formed from such a fractured film acts as an efficient electron field emitter and thus is useful in vacuum microelectronic devices.

Abstract: This invention provides a process for improving the field emission of an electron field emitter comprised of an acicular emitting substance such as acicular carbon, an acicular semiconductor, an acicular metal or a mixture thereof, comprising applying a force to the surface of the electron field emitter wherein the force results in the removal of a portion of the electron field emitter thereby forming a new surface of the electron field emitter.

Abstract: An apparatus comprising a circuit that may be configured to (i) change a frequency of one or more first signals in response to a second signal and (ii) generate a third signal in response to either the second signal or a predetermined time period expiring.

Abstract: This invention provides a process for improving the field emission of an electron field emitter comprised of an acicular emitting substance such as acicular carbon, an acicular semiconductor, an acicular metal or a mixture thereof, comprising applying a force to the surface of the electron field emitter wherein the force results in the removal of a portion of the electron field emitter thereby forming a new surface of the electron field emitter.

Abstract: The present invention relates to a process for filling vias in an electronic structure with thick film paste. The vias may be preexisting in a substrate comprised of thick film materials or fabricated in a photoresist layer over-coating the substrate. The invention is particularly useful in fabrication of electron field emission triode arrays where the vias are of fine dimension (<100 ?m in diameter) and the electron emitter thick film paste, which may contain carbon nanotubes, is of high value.

Abstract: Compositions for use in non-linear optical devices. The compositions have high first molecular electronic hyperpolarizability (.beta.) and therefore display high second order non-linear optical properties when incorporated into non-linear optical devices. The acceptor and donor groups which are used in the compositions, along with the .pi.(pi)-bridge length is chosen to optimize second-order non-linear optical responses.

Abstract: Compositions for use in non-linear optical devices. The compositions have high first molecular electronic hyperpolarizability (.beta.) and therefore display high second order non-linear optical properties when incorporated into non-linear optical devices. The acceptor and donor groups which are used in the compositions, along with the .pi.(pi)-bridge length is chosen to optimize second-order non-linear optical responses.

Abstract: Compositions for use in non-linear optical devices. The compositions have high first molecular electronic hyperpolarizability (.beta.) and therefore display high second order non-linear optical properties when incorporated into non-linear optical devices. The acceptor and donor groups which are used in the compositions, along with the .pi.(pi)-bridge length is chosen to optimize second-order non-linear optical responses.

Abstract: Compositions for use in non-linear optical devices. The compositions have first molecular electronic hyperpolarizability (.beta.) either positive or negative in sign and therefore display second order non-linear optical properties when incorporated into non-linear optical devices.

Abstract: Method and device for wavelength conversion using type II phase matching are characterized by employing a crystal consisting essentially of doped MTiOXO.sub.4 (wherein M is K, Rb and/or Tl and X is P and/or As) containing Fe, Nb and/or Ta dopant in an amount, totalling at least about 100 ppm, effective to increase the n.sub.z -n.sub.x optical birefringence of the doped crystal at least about 0.001 compared to a crystal without the dopant. Generation of output waves of an optical birefringence higher than the highest corresponding optical birefringence of a crystal without the dopant is disclosed. Among the useful crystals are crystals consisting essentially of doped MTiOXO.sub.4 containing at least about 100 ppm Ta.

Abstract: Disclosed are polymers which contain NLO dye moieties based upon a barbituric acid group, a thiobarbituric acid group or a 1,3-bis(dicyanomethylene)indan-2-ylidene group. These polymers, after poling, are useful in NLO elements in devices employing nonlinear optics. Also disclosed are various intermediates used in making such polymers.