Patents by Inventor Larraitz AÑORGA GOMEZ

Larraitz AÑORGA GOMEZ has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11908582
    Abstract: The description relates to a system for assessing the functional performance of an individual, the system comprising a sensor device; a monitoring system, connectable to the sensor device, configured to receive signals coming from the sensor device, pre-process the signals received from the sensor device, extract the main features of the pre-processed signals to be used as predictor variables, assess the functional performance of an individual based on the predictor variables.
    Type: Grant
    Filed: December 19, 2019
    Date of Patent: February 20, 2024
    Assignee: ADMINISTRACIÓN GENERAL DE LA COMUNIDAD AUTÓNOMA DE EUSKADI
    Inventors: Jaime Herran Planchuelo, Larraitz Añorga Gomez, Itziar Vergara Micheltorena, Kalliopi Vrotsou, Marcos Jesus Arauzo Bravo, Ander Matheu Fernández
  • Publication number: 20220059233
    Abstract: The description relates to a system for assessing the functional performance of an individual, the system comprising a sensor device; a monitoring system, connectable to the sensor device, configured to receive signals coming from the sensor device, pre-process the signals received from the sensor device, extract the main features of the pre-processed signals to be used as predictor variables, assess the functional performance of an individual based on the predictor variables.
    Type: Application
    Filed: December 19, 2019
    Publication date: February 24, 2022
    Inventors: Jaime HERRAN PLANCHUELO, Larraitz AÑORGA GOMEZ, Itziar VERGARA MICHELTORENA, Kalliopi VROTSOU, Marcos Jesus ARAUZO BRAVO, Ander Matheu FERNÁNDEZ
  • Publication number: 20120211363
    Abstract: The present invention relates to a thin-film pseudo-reference electrode and method for the production thereof, wherein the pseudo-reference electrode is made up of a substrate formed by an oxidized silicon wafer on which a single thin film of silver, which has a thickness comprised between 100 nm and 1500 nm, is deposited directly by means of the sputtering technique.
    Type: Application
    Filed: October 15, 2010
    Publication date: August 23, 2012
    Applicant: CENTRO DE ESTUDIOS E INVESTIGACIUONES TECNICAS (CEIT)
    Inventors: Larraitz Añorga Gómez, Sergio Arana Alonso