Abstract: A Vertical-Cavity Surface-Emitting Laser (VCSEL) is disclosed, comprising an optical cavity bounded by a top mirror and a bottom mirror, wherein the top mirror has multiple layers of alternating refractive index, of which the bottom three or more layers of the top mirror are deep oxidation layers having an increased oxidation length, a light emitting active region between the top mirror and the bottom mirror, and an aperture with tapered edges between the active region and the top mirror, wherein the aperture has a thickness, a taper length, an oxide aperture length, a taper angle, and an aperture opening diameter designed to reduce an optical mode's diameter without significantly increasing the optical mode's round trip scattering loss.

Abstract: The present invention relates to the tailoring the reflectivity spectrum of a sampled-grating distributed Bragg reflector (SGDBR) by applying digital sampling theory to choose the way each reflector is sampled. The resulting mirror covers a larger wavelength span and has peaks with a larger, more uniform, coupling constant (?) than the mirrors produced using conventional approaches. The improved mirror also retains the benefits of the sample grating approach. Additionally, most of the embodiments are relatively simple to manufacture.

Abstract: A tunable laser source with integrated optical modulator. The tunable laser source is a widely tunable semiconductor laser that is comprised of an active region on top of a thick, low bandgap, waveguide layer, wherein both the waveguide layer and the active region are fabricated between a p-doped region and an n-doped region. An electro-absorption modulator is integrated into the semiconductor laser, wherein the electro-absorption modulator shares the waveguide layer with the semiconductor laser.

Abstract: A Vertical-Cavity Surface-Emitting Laser (VCSEL) is disclosed, comprising an optical cavity bounded by a top mirror and a bottom mirror, wherein the top mirror has multiple layers of alternating refractive index, of which the bottom three or more layers of the top mirror are deep oxidation layers having an increased oxidation length, a light emitting active region between the top mirror and the bottom mirror, and an aperture with tapered edges between the active region and the top mirror, wherein the aperture has a thickness, a taper length, an oxide aperture length, a taper angle, and an aperture opening diameter designed to reduce an optical mode's diameter without significantly increasing the optical mode's round trip scattering loss.

Abstract: A tunable laser source with integrated optical modulator. The tunable laser source is a widely tunable semiconductor laser that is comprised of an active region on top of a thick, low bandgap, waveguide layer, wherein both the waveguide layer and the active region are fabricated between a p-doped region and an n-doped region. An electro-absorption modulator is integrated into the semiconductor laser, wherein the electro-absorption modulator shares the waveguide layer with the semiconductor laser.

Abstract: A tunable laser source (10) with an integrated optical modulator (20). The laser source (10) is a widely tunable semiconductor laser that is comprised of an active region on top of a thick low bandgap, waveguide layer (22), wherein both the waveguide layer (220) and the active region are fabricated between a p-doped region and an n-doped region. An electro-absorption modulator (20) is integrated into the semiconductor laser (10), wherein the electro-absorption modulator (20) shares the waveguide layer (22) with the semiconductor laser.

Abstract: Traveling-wave optoelectronic wavelength conversion is provided by a monolithic optoelectronic integrated circuit that includes an interconnected traveling-wave photodetector and traveling-wave optical modulator with a widely tunable laser source. Either parallel and series connections between the photodetector and modulator may be used. An input signal modulated onto a first optical wavelength develops a traveling wave voltage on transmission line electrodes of the traveling-wave photodetector, and this voltage is coupled via an interconnecting transmission line of the same characteristic impedance to transmission line electrodes of the traveling-wave optical modulator to modulate the signal onto a second optical wavelength derived from the tunable laser. The traveling wave voltage is terminated in a load resistor having the same characteristic impedance as the photodetector and modulator transmission lines.

Abstract: Traveling-wave optoelectronic wavelength conversion is provided by a monolithic optoelectronic integrated circuit that includes an interconnected traveling-wave photodetector and traveling-wave optical modulator with a widely tunable laser source. Either parallel and series connections between the photodetector and modulator may be used. An input signal modulated onto a first optical wavelength develops a traveling wave voltage on transmission line electrodes of the traveling-wave photodetector, and this voltage is coupled via an interconnecting transmission line of the same characteristic impedance to transmission line electrodes of the traveling-wave optical modulator to modulate the signal onto a second optical wavelength derived from the tunable laser. The traveling wave voltage is terminated in a load resistor having the same characteristic impedance as the photodetector and modulator transmission lines.

Abstract: Controller calibration methods for use with sampled grating distributed Bragg reflector SGDBR laser (102) is presented. An exemplary method includes conducting a two-dimensional mirror current scam of each front mirror current setting and back mirror current setting for a sampled grating distributed Bragg reflector SGBDR laser(102) to produce laser setting data corresponding to each front mirror current setting and back mirror current setting to generate a reference optical signal (114) of the SGDBR laser (102). A channel operating point is determined for each channel within the two-dimensional scan data. A fix up of the operating point to substantially minimize wavelength and power error can also be performed. A two-dimensional control surface is characterized at the channel operating point for each channel. A lookup table for controlling the SGDBR (102) laser is generated from the operating point currents, locker values and two-dimensional control surface data from each channel.

Abstract: Traveling-wave optoelectronic wavelength conversion is provided by a monolithic optoelectronic integrated circuit that includes an interconnected traveling-wave photodetector and traveling-wave optical modulator with a widely tunable laser source. Either parallel and series connections between the photodetector and modulator may be used. An input signal modulated onto a first optical wavelength develops a traveling wave voltage on transmission line electrodes of the traveling-wave photodetector, and this voltage is coupled via an interconnecting transmission line of the same characteristic impedance to transmission line electrodes of the traveling-wave optical modulator to modulate the signal onto a second optical wavelength derived from the tunable laser. The traveling wave voltage is terminated in a load resistor having the same characteristic impedance as the photodetector and modulator transmission lines.

Abstract: A controller for use with sampled grating distributed Bragg reflector (SGDBR) lasers is presented. An exemplary controller includes a table of settings representing a control surface, each setting corresponding to a separate operating point of the SGDBR laser, a first mirror current controller and a second mirror current controller. The first mirror controller and the second mirror current controller respectively control a first mirror current and a second mirror current about an estimated extremum point of the control surface to substantially maintain alignment between each of a first mirror and a second mirror, and an associated cavity mode. The first mirror current and the second mirror current can be locked at a substantially fixed distance from the extremum of the control surface.

Abstract: The present invention relates to the tailoring the reflectivity spectrum of a SGDBR by applying digital sampling theory to choose the way each reflector is sampled. The resulting mirror covers a larger wavelength span and has peaks with a larger, more uniform, coupling constant (?) than the mirrors produced using conventional approaches. The improved mirror also retains the benefits of the sample grating approach. Additionally, most of the embodiments are relatively simple to manufacture.

Abstract: A tunable laser is disclosed including a gain section for creating a light beam over a bandwidth, a phase section for controlling the light beam around a center frequency of the bandwidth, a waveguide for guiding and reflecting the light beam in a cavity including a relatively low energy bandgap separate-confinement-heterostructure (SCH), a front mirror bounding an end of the cavity and a back mirror bounding an opposite end of the cavity wherein gain is provided by at least one of the group comprising the phase section, the front mirror and the back mirror.

Abstract: An integrated optical chip device for molecular diagnostics comprising a tunable laser cavity sensor chip using heterodyned detection at the juncture of a sensor laser and a reference laser, and including a microfluid chip to which the sensor chip is flip-chip bonded to form a sample chamber that includes exposed evanescent field material of the tunable laser cavity to which fluid to be diagnosed is directed.

Abstract: The present invention describes methods and apparatus for reliably assuring that correct mirror currents are selected during a channel switch to achieve the desired wavelength channel, based on feedback from either internal or external means combined with a mode map obtained at a time zero calibration.

Abstract: A method for aperturing a vertical-cavity surface-emitting laser (VCSEL), for increasing the external quantum efficiency and decreasing the threshold current, involves an etching mixture that is applied to the active region of the VCSEL. The etching mixture is designed in a manner to selectively etch the active region of the VCSEL at a rate substantially faster than the etch rate of at least one of the multiple DBRS associated with the VCSEL.

Abstract: A system and a method for reducing the temperature in a vertical-cavity surface-emitting laser (VCSEL) comprising of including at least one heat spreading layer adjecent to one of the reflecting surfaces in a VCSEL. The heat spreading layer has high thermal conductivity allowing heat to bypass said one of the reflecting surfaces, thereby efficiently removing the heat away from the device. This also reduces the serial resistance and the thermal impedance of the VCSEL.

Abstract: A distributed Bragg reflector (DBR) for a vertical cavity surface emitting laser (VCSEL) has a semiconductor material system including the elements aluminum, gallium, arsenic, and antimony. Use of antimony in the DBR structure allows current to be pumped through the DBRs into an active region to provide for long wavelength, continuous wave operation of the VCSEL.

Abstract: An integrated optical chip device for molecular diagnostics comprising a tunable laser cavity sensor chip using heterodyned detection at the juncture of a sensor laser and a reference laser, the sensor laser including exposed evanescent field material.

Abstract: A controller for use with sampled grating distributed Bragg reflector (SGDBR) lasers is presented. An exemplary controller includes a table of settings representing a control surface, each setting corresponding to a separate operating point of the SGDBR laser, a first mirror current controller and a second mirror current controller. The first mirror controller and the second mirror current controller respectively control a first mirror current and a second mirror current about an estimated extremum point of the control surface to substantially maintain alignment between each of a first mirror and a second mirror, and an associated cavity mode. The first mirror current and the second mirror current can be locked at a substantially fixed distance from the extremum of the control surface.