Patents by Inventor Larry A. Dworkin

Larry A. Dworkin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of eliminating photoresist poisoning in damascene applications
    Patent number: 7034409
    Abstract: A method is provided for processing a substrate including treating a surface of a dielectric layer comprising silicon and carbon by exposing the dielectric layer comprising silicon and carbon to a plasma of an inert gas, and depositing a photoresist on the dielectric layer comprising silicon and carbon. The dielectric layer may comprise a first dielectric layer comprising silicon, carbon, and nitrogen, and a second layer of nitrogen-free silicon and carbon containing material in situ on the first dielectric layer, and a third dielectric layer comprising silicon, oxygen, and carbon on the second dielectric layer.
    Type: Grant
    Filed: November 21, 2003
    Date of Patent: April 25, 2006
    Assignee: Applied Materials Inc.
    Inventors: Ping Xu, Li-Qun Xia, Larry A. Dworkin, Mehul Naik
  • Method of eliminating photoresist poisoning in damascene applications
    Publication number: 20040106278
    Abstract: A method is provided for processing a substrate including treating a surface of a dielectric layer comprising silicon and carbon by exposing the dielectric layer comprising silicon and carbon to a plasma of an inert gas, and depositing a photoresist on the dielectric layer comprising silicon and carbon. The dielectric layer may comprise a first dielectric layer comprising silicon, carbon, and nitrogen, and a second layer of nitrogen-free silicon and carbon containing material in situ on the first dielectric layer, and a third dielectric layer comprising silicon, oxygen, and carbon on the second dielectric layer.
    Type: Application
    Filed: November 21, 2003
    Publication date: June 3, 2004
    Applicant: Applied Materials, Inc.
    Inventors: Ping Xu, Li-Qun Xia, Larry A. Dworkin, Mehul Naik
  • Method of eliminating photoresist poisoning in damascene applications
    Patent number: 6656837
    Abstract: A method is provided for processing a substrate including treating a surface of a dielectric layer comprising silicon and carbon by exposing the dielectric layer comprising silicon and carbon to a plasma of an inert gas, and depositing a photoresist on the dielectric layer comprising silicon and carbon. The dielectric layer may comprise a first dielectric layer comprising silicon, carbon, and nitrogen, and a second layer of nitrogen-free silicon and carbon containing material in situ on the first dielectric layer, and a third dielectric layer comprising silicon, oxygen, and carbon on the second dielectric layer.
    Type: Grant
    Filed: October 11, 2001
    Date of Patent: December 2, 2003
    Assignee: Applied Materials, Inc.
    Inventors: Ping Xu, Li-Qun Xia, Larry A. Dworkin, Mehul Naik
  • Method of eliminating photoresist poisoning in damascene applications
    Publication number: 20030077916
    Abstract: A method is provided for processing a substrate including treating a surface of a dielectric layer comprising silicon and carbon by exposing the dielectric layer comprising silicon and carbon to a plasma of an inert gas, and depositing a photoresist on the dielectric layer comprising silicon and carbon. The dielectric layer may comprise a first dielectric layer comprising silicon, carbon, and nitrogen, and a second layer of nitrogen-free silicon and carbon containing material in situ on the first dielectric layer, and a third dielectric layer comprising silicon, oxygen, and carbon on the second dielectric layer.
    Type: Application
    Filed: October 11, 2001
    Publication date: April 24, 2003
    Applicant: Applied Materials, Inc.
    Inventors: Ping Xu, Li-Qun Xia, Larry A. Dworkin, Mehul Naik