Abstract: The present invention provides, in one embodiment, a method of reducing 1/f noise in a metal oxide semiconductor (MOS) device (100). The method comprises forming an oxide layer (110) on a silicon substrate (105) and depositing a polysilicon layer (115) on the oxide layer (110). The method further includes implanting a fluorine dopant (130) into the polysilicon layer (115) at an implant dose of at least about 4×1014 atoms/cm2. The polysilicon layer (115) is thermally annealed such that a portion of the fluorine dopant (130) is diffused into the oxide layer (110) to thereby reduce a 1/f noise of the MOS device (100). Other embodiments of the provide a MOS device (300) manufactured by the above-described method and a method of manufacturing an integrated circuit (500) that includes the above-described method.

Abstract: A clutch interposed between a hub mounted for rotation on a spindle and a selectively driveable axle which extends longitudinally through the spindle serves to engage the hub to the axle when the clutch is subjected to torque caused by placement of the axle in a dynamic or driving axle mode. When the axle is in a passive or non-driving axle mode the clutch serves to disengage the hub from the axle whereby the hub is free-wheeling on the spindle.