Abstract: A method of making an oxide compound, comprising subjecting a base material to a source of heat that produces a localized temperature in the range of 2,000 to 5,500 degrees Celsius that vaporizes the base material which is drawn upward above the surface of the base material where it oxidizes, after which the resulting oxide compound is collected. A method of making bismuth trioxide, comprising providing an electric arc between electrodes, wherein elemental bismuth is in touching proximity to one of the electrodes. The bismuth is evaporated, drawn upward off the surface of the molten metal, forms the bismuth oxide on contact with oxygen, and the particles of bismuth oxide are collected. A method of making an oxide using an electric arc to evaporate a base material which then reacts with oxygen, and collecting the resulting oxides of base material.

Abstract: A method of making an oxide compound, comprising subjecting a base material to a source of heat that produces a localized temperature in the range of 2,000 to 5,500 degrees Celsius that vaporizes the base material which is drawn upward above the surface of the base material where it oxidizes, after which the resulting oxide compound is collected. A method of making bismuth trioxide, comprising providing an electric arc between electrodes, wherein elemental bismuth is in touching proximity to one of the electrodes. The bismuth is evaporated, drawn upward off the surface of the molten metal, forms the bismuth oxide on contact with oxygen, and the particles of bismuth oxide are collected. A method of making an oxide using an electric arc to evaporate a base material which then reacts with oxygen, and collecting the resulting oxides of base material.

Abstract: In the manufacture of semiconductor device packages, a jumper chip, comprising a substrate and a gold alloy attached thereto, with improved bonding characteristics is provided. By applying a coating of gold on both sides of the gold alloy prior to attaching the gold alloy to the substrate, the bonding of the gold alloy to the substrate and to the gold coating of the cavity in a device package is improved. Scrubbing of the jumper chip on the gold coating of the cavity is obviated. The additional gold layers applied to the gold alloy are distinct and visible on a photograph of a cross-section of the jumper chip.

Abstract: In the manufacture of semiconductor device packages, a jumper chip, comprising a substrate and a gold alloy attached thereto, with improved bonding characteristics is provided. By applying a coating of gold on both sides of the gold alloy prior to attaching the gold alloy to the substrate, the bonding of the gold alloy to the substrate and to the gold coating of the cavity in a device package is improved. Scrubbing of the jumper chip on the gold coating of the cavity is obviated. The additional gold layers applied to the gold alloy are distinct and visible on a photograph of a cross-section of the jumper chip.

Abstract: Covers for semiconductor packages are made by diffusion pressure bonding a coated substrate to a preform at a temperature below the melting point of the preform alloy. An alloy preform is coated on one side with a thin layer of the preform alloy component that has a lower melting point than the preform alloy, preferably the lowest melting point. Coated substrate and coated preform are assembled and the assembly is compressed and heated below the melting point of the preform alloy but above the melting point of the preform coating to form a diffusion pressure bond between substrate and preform.

Abstract: Cyanic extraction of precious metal from comminuted, refractory precious metal ore as well as refractory precious metal concentrates and tailings from such ore is effected with rapidity and high yield by agitationally treating the refractory material with an aerated, alkaline solution containing a high concentration of water soluble cyanide and a low concentration of chemical oxidizer such as potassium permanganate.