Abstract: A capacitor structure that includes a silicon substrate having a trench structure formed therein; a dielectric disposed over a surface of the trench structure, conformal to the surface of the trench structure; and a filling layer disposed over the dielectric layer and into the trench structure, the filling layer including a conductive layer and a polymer layer.

Abstract: RC architectures are provided that include a substrate provided with a capacitor having a thin-film top electrode portion at a surface of the substrate on one side thereof. The resistance provided in series with the capacitor is controlled by providing a contact plate, spaced from the thin-film top electrode portion, and a set of plural bridging contacts extending between, and electrically interconnecting, the thin-film top electrode portion and the contact plate. Different resistance values can be set by appropriate selection of the number of bridging contacts. The capacitor can be a three-dimensional capacitor and contacts are then provided on respective first and second sides of the substrate, which face each other in the thickness direction of the substrate.

Abstract: A semiconductor structure that includes a protruding wall structure that extends from a base surface of a substrate. Corners of the protruding wall structure may be smoothed or rounded to reduce electrical stress within the structure. The protruding wall structure may be partitioned into multiple wall regions disposed along different directions of the substrate to reduce mechanical stress.